The present invention provides a 
tin selenide thin film transverse 
thermoelectric effect-based light and 
heat detector. The 
detector comprises a detecting element, 
metal electrodes and a 
metal lead; the detecting element comprises an 
oxide single-
crystal substrate and a 
tin selenide single-
crystal thin film which is deposited on the 
oxide single-
crystal substrate and is obtained through c-axis inclined growth; and the two 
metal electrodes are symmetrically arranged on the upper surface of the 
tin selenide single-crystal thin film, wherein the 
metal electrodes are connected with the input end of a 
voltmeter through metal conductors. According to the 
tin selenide thin film transverse 
thermoelectric effect-based light and 
heat detector of the invention, a binary material, that is, 
tin selenide, is deposited on the substrate through a 
pulsed laser deposition technology, so that the 
tin selenide single-crystal thin film formed through c-axis inclined growth is obtained; and the light and 
heat detector is fabricated through using the lateral 
thermoelectric effect of the tin selenide single-crystal thin film. The detecting element of the 
detector has the advantages of simple structure, noneed for cooling and pressure biasing components, simple preparation process and low cost. The light and heat 
detector is wide in response band, is high in detection sensitivity, has excellent detecting performance under 
continuous light irradiation, and can achieve simultaneous light and 
heat detection.