Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Tin selenide thin film and preparation method thereof

A technology of tin selenide and thin films, applied in electrolytic coatings, electrophoretic plating, coatings, etc., can solve the problems of low preparation cost, lack of preparation of high-quality tin selenide thin films, etc., and achieves low requirements for equipment and high production efficiency , the effect of low energy consumption

Inactive Publication Date: 2018-12-18
LUOYANG NORMAL UNIV
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] The purpose of the present invention is to provide a preparation method for a lower tin selenide film with a lower preparation cost in order to solve the current problem of lacking the preparation of high-quality tin selenide films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tin selenide thin film and preparation method thereof
  • Tin selenide thin film and preparation method thereof
  • Tin selenide thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A tin selenide thin film is prepared by electrodeposition on an ITO substrate by an electrochemical method. Its preparation method specifically comprises the following steps:

[0042] (1) Weigh 10mg of SnSe powder into 30ml of acetone, and use an ultrasonic cleaner to vibrate ultrasonically for 15min~20min to form a dark brown suspension;

[0043] (2) Pour the suspension evenly into two centrifuge tubes, put it into a centrifuge and centrifuge at a speed of 5000 r / min, and take the supernatant into a 50 mL beaker after centrifugation;

[0044] (3) Weigh 3 mg of iodine powder and add it to the supernatant obtained after centrifugation, and sonicate for 15-20 minutes, so that the iodine powder particles are fully dispersed in acetone to obtain a suspension of SnSe powder and iodine;

[0045] (4) Connect the ITO substrate on which the SnSe film needs to be deposited to the negative pole of the DC stabilized power supply, connect the metal titanium sheet to the positive po...

Embodiment 2

[0049] A tin selenide thin film is prepared by electrodeposition on an ITO substrate by an electrochemical method. Its preparation method specifically comprises the following steps:

[0050] (1) Weigh 20 mg of SnSe powder into 80 mL of acetone, and use an ultrasonic cleaner to vibrate ultrasonically for 15-20 min to form a dark brown suspension;

[0051] (2) Pour the suspension evenly into two centrifuge tubes, put it into a centrifuge for centrifugation, and the speed of the centrifuge is 2000 ~ 5000 r / min. After centrifugation, take the supernatant into a 50 mL beaker;

[0052] (3) Weigh 4 mg of iodine powder into the supernatant obtained after centrifugation and sonicate for 15-20 minutes to fully disperse the iodine powder particles in acetone to obtain a suspension of SnSe powder and iodine;

[0053] (4) Connect the ITO substrate on which the SnSe film needs to be deposited to the negative pole of the DC stabilized power supply, connect the metal titanium sheet to the po...

Embodiment 3

[0057] A tin selenide thin film is prepared by electrodeposition on an ITO substrate by an electrochemical method. Its preparation method specifically comprises the following steps:

[0058] (1) Weigh 30 mg of SnSe powder into 100 mL of acetone, and use an ultrasonic cleaner to vibrate ultrasonically for 15-20 min to form a dark brown suspension;

[0059] (2) Pour the suspension evenly into two centrifuge tubes, put it into a centrifuge for centrifugation, and the speed of the centrifuge is 2000 ~ 5000 r / min. After centrifugation, take the supernatant into a 50 mL beaker;

[0060] (3) Weigh 10 mg of iodine powder, 3 mg of potassium iodide and 5 mg of sodium bicarbonate and add them to the supernatant obtained after centrifugation and sonicate for 15-20 min to fully disperse the iodine powder particles in acetone to obtain the mixture of SnSe powder and iodine Suspension; adjust the pH of the suspension to 8.5-9; (due to the limitation of precision, this range is fine)

[006...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of thin film preparation, in particular to a tin selenide thin film and a preparation method thereof. The thin film is prepared through electrochemical deposition on ITO substrates by using an electrochemical method. According to the tin selenide thin film prepared by using the electrochemical method, compared with a current method, the preparation method has the advantages of being low in cost, low in energy consumption, low in requirement for instrument and equipment, high in production efficiency, easy to operate and the like.

Description

technical field [0001] The invention relates to the technical field of thin film preparation, in particular to a tin selenide thin film and a preparation method thereof. Background technique [0002] With the rapid development of social science and technology, the current social energy consumption is extremely increasing. The scarcity of energy is a very serious problem at present. It is very important to make full use of a clean and renewable resource. Therefore, in order to make full use of solar energy, a clean, safe and environmentally friendly renewable resource, the research and development of optoelectronic materials have been paid more and more attention in recent years. [0003] Metal selenide is generally considered to be a good material for making solar cell devices due to its good photoelectric properties, especially SnSe, which is an important IV-VI semiconductor, with an indirect band gap of 0.90eV and a direct band gap of 1.30eV, which can absorb most of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C25D13/02C25D13/22C25D13/12
Inventor 赵志国李智昂周毅平张伟英胡晓柯付文文范一丹贾红
Owner LUOYANG NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com