SnSe square nanosheets and preparation method thereof

A technology of tin selenide and nanosheets, applied in the direction of nanotechnology, nanotechnology, binary selenium/tellurium compounds, etc., can solve the problems of cumbersome reaction steps, secondary pollution of the environment, and long reaction time, and achieve high sample purity , Large output, fast response effect

Inactive Publication Date: 2015-06-10
JILIN UNIV
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned preparation methods generally have the characteristics of long reaction time, low output, need to add reaction catalysts, surfactants, and rely on substrate growth, etc., which lead to high costs and secondary pollution to the environment during the preparation process.
In addition, due to the cumbersome reaction steps, precursors, intermediate products, solvent residues, etc. are difficult to remove in the product and adsorbed on the surface of the product, which brings great difficulties to the further study of the essential properties of SnSe.
[0004] There is no report on the preparation of SnSe nanosheets by arc method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SnSe square nanosheets and preparation method thereof
  • SnSe square nanosheets and preparation method thereof
  • SnSe square nanosheets and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0024] Example 2 The whole process of preparing the best SnSe square nanosheets.

[0025] The Sn powder and the Se powder with a purity of 99.99% are put into a mixer in a molar ratio of 1:1 and mixed evenly. Take out 5g of the mixed powder, use a tablet press to briquette, and press into a cylinder with a diameter of 1.8cm and a height of 0.5cm. Put the briquette of the pressed mixed powder into the graphite pot, and then put it into the anode copper pot in the reaction chamber of the DC arc discharge device. The cathode is a tungsten rod electrode. Vacuumize the reaction chamber of the DC arc discharge device (preferably less than 1Pa), then fill the mixed gas at 10-15kPa according to the volume ratio of argon: nitrogen = 1:1, and inject circulating cooling water into the condensation wall and copper pot, and start discharge. During the discharge process, keep the voltage at 18V, the current at 80-85A, and react for 1-2 minutes. After the reaction is over, vacuumize the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
densityaaaaaaaaaa
lengthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses SnSe square nanosheets and a preparation method thereof, belonging to the technical field of preparation of nanometer materials. The preparation method comprises the following steps: uniformly mixing tin powder and selenium powder, and pressing into a pressing block; arranging the pressing block in a graphite pot, putting the graphite pot into a copper pan anode in a reaction chamber of a direct current arc discharge device, wherein a tungsten rod cathode is opposite to the copper pan anode; introducing circulating cooling water into the cooling wall; carrying out a discharge reaction in the mixed gas of argon and nitrogen, wherein the discharge voltage is 18V, the current is 80-85A, and reacting for 1-2 minutes; and passivating in an argon atmosphere, and collecting the ash black powder to serve as the SnSe square nanosheets on the inner side of the top cover of the condensation wall. The sample purity is high, the crystallinity is high, and the shape and size are uniform; any substrate, template and catalyst are not needed in the preparation process, and the method is environment-friendly; and the method is short in preparation time, low in energy consumption, low in cost and high in repeatability. The prepared product has potential application values in aspects such as solar cell conversion, holographic record and recycled lithium ion batteries.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a simple method for preparing square nanosheets of stannous selenide. Background technique [0002] With the extensive and in-depth research on nanomaterials, it is found that nanomaterials have a large specific surface area, and the number of surface atoms, surface energy, and surface tension increase sharply with the decrease of particle size, showing small size effects, surface effects, and quantum size effects. And macroscopic quantum tunneling effect and other characteristics, resulting in nanomaterials are different from traditional materials in terms of magnetism, electricity, optics, and mechanical properties. Among them, nanosheet-like structure materials are called two-dimensional nanomaterials because their size in only one dimension is much smaller than other dimensions. This material has broad application prospects in microelectronic dev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y30/00B82Y40/00
CPCC01B19/007C01P2002/70C01P2002/72C01P2002/85C01P2004/03C01P2004/04C01P2004/24
Inventor 崔啟良张健王秋实祝洪洋武晓鑫江俊儒李冬梅古雅荣
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products