Solution phase method for synthesizing tin selenide monocrystal nanowire

A technology of single crystal nanometer and tin selenide, which is applied in the direction of chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problem of small diameter of colloidal products, achieve uniform shape, good colloidal dispersion, The effect of easy operation

Inactive Publication Date: 2013-04-24
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a new method for synthesizing tin selenide single crystal nanowires in the organic phase for the defects of the current hydrothermal method and template method, which has the advantages of simple synthe

Method used

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  • Solution phase method for synthesizing tin selenide monocrystal nanowire
  • Solution phase method for synthesizing tin selenide monocrystal nanowire
  • Solution phase method for synthesizing tin selenide monocrystal nanowire

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Embodiment 1

[0031] Mix 2.5mmol Se powder and 10mmol TOP, and magnetically stir at room temperature for 10 hours to completely dissolve Se to obtain a 0.5mol / L Se precursor solution. Mix 0.02mmol BiCl3 with 1.0mL acetone and stir magnetically for 1 minute to obtain a 0.02mol / L BiCl3 solution. Take 200 μL BiCl3 solution and mix with 0.2 mmol bis[bis(trimethylsilyl)amino]tin(II) to obtain Sn injection solution. 400 μL of Se precursor solution was mixed with 4 g of oleylamine to obtain a reaction solution, which was heated to 290° C. under nitrogen protection. The prepared Sn injection solution was added to the above reaction solution, and reacted for 2 minutes to obtain a tin selenide single crystal nanowire with a length of about 1 μm.

Embodiment 2

[0033] Mix 2.5mmol Se powder and 10mmol TOP, and magnetically stir at room temperature for 10 hours to completely dissolve Se to obtain a 0.5mol / L Se precursor solution. Mix 0.02mmol BiCl3 with 1.0mL acetone and stir magnetically for 1 minute to obtain a 0.02mol / L BiCl3 solution. Take 200 μL BiCl3 solution and mix with 0.2 mmol bis[bis(trimethylsilyl)amino]tin(II) to obtain Sn injection solution. Take 400 μL of Se precursor solution, mix with 3.5g TOPO and 2.5g oleylamine to obtain a reaction solution, and heat to 290°C under the protection of nitrogen. The prepared Sn injection solution was added to the above reaction solution, and reacted for 2 minutes to obtain a tin selenide single crystal nanowire with a length of about 10 μm.

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Abstract

The invention relates to a solution phase method for synthesizing a tin selenide monocrystal nanowire, and belongs to the technical field of inorganic compound semiconductor nano material. Bis[bis(trimethyl silicon alkyl) amino] tin (II) and selenizing organic phosphine are used as raw materials to rapidly synthesize the tin selenide monocrystal nanowire through assistance of a catalyst at 250-310 DEG C in 1-2 min, in oil amine or a mixed solvent of oil amine and trioctylphosphine phosphorus oxide. The tin selenide monocrystal nanowire synthesized by the invention has advantages of small diameter (average diameter of 21 nm), adjustable average length from hundreds of nanometers to tens of microns, uniform appearance, good crystallinity and good colloidal dispersion, etc. At the same time, the invention has simple process, rapid synthesis (only 1-2 min), no intermediate product, convenient operation and easy popularization, and is suitable for industrial production. The tin selenide monocrystal nanowire prepared by the method provided by the invention has good optical properties, and can be used in the manufacture of optoelectronic devices or solar cell materials.

Description

technical field [0001] The invention belongs to the technical field of inorganic compound semiconductor nanomaterials, in particular to a method for synthesizing tin selenide single crystal nanowires, in particular to a method for growing nanowires in a solution phase (solution-liquid-solid method, SLS). Background technique [0002] Tin selenide (SnSe) is an important IV-VI compound semiconductor, which has broad application prospects in the fields of resistive memory, infrared optoelectronic devices, lithium-ion battery anode materials and solar cells. The indirect bandgap of the tin selenide bulk material is 0.90eV, and its direct bandgap is 1.30eV. Due to the quantum confinement effect, nanoscale SnSe has exhibited a much higher and tunable band gap than its bulk material. This allows nano-tin selenide to absorb most of the solar spectrum. As an earth-abundant, environmentally friendly and chemically stable material, nano-SnSe may become one of the most ideal materials...

Claims

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Application Information

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IPC IPC(8): C30B7/14C30B29/62C30B29/46
Inventor 张文华李灿刘胜
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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