Method for preparing tin selenide photoelectric thin film

A photoelectric thin film and tin selenide technology, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problems of high preparation costs and complicated process routes, and achieve the effects of low production costs, low requirements for equipment, and easy operation

Inactive Publication Date: 2012-07-25
SHANDONG JIANZHU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the low cost of raw materials, it is a very promising photoelectric thin film material, but the existing process route is complicated and the production cost is high, so it is also necessary to explore low-cost preparation processes

Method used

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  • Method for preparing tin selenide photoelectric thin film
  • Method for preparing tin selenide photoelectric thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] a. Cleaning of the substrate: The silicon substrate (size 2mm×2mm) was cleaned as described above.

[0030] b. 2.036 parts of SnCl 2 2H 2 O and 1.0 parts SeO 2 Put it into a glass bottle, add 54.545 parts of ethanol, and use ultrasonic vibration for more than 30 minutes to make the substances in the solution evenly mixed.

[0031] c. Drop the above solution onto the silicon substrate placed on the homogenizer, and then start the homogenizer. The homogenizer rotates at 200 rpm for 5 seconds, and at 1000 rpm for 15 seconds, so that the dripped solution is coated After the cloth is uniform, the substrate is dried at 100°C, and then the aforementioned solution is repeatedly dripped and spin-coated, and then dried again. This is repeated 8 times, and a precursor thin film sample with a certain thickness is obtained on the substrate.

[0032] d. Put the precursor thin film sample obtained by the above process into an airtight container, and put 18.182 parts of hydrazine hy...

Embodiment 2

[0035] a. Cleaning of the substrate: The silicon substrate (size 2mm×2mm) was cleaned as described above.

[0036] b. 2.036 parts of SnCl 2 2H 2 O and 1.0 parts SeO 2 Put it into a glass bottle, add 54.545 parts of ethanol, and use ultrasonic vibration for more than 30 minutes to make the substances in the solution evenly mixed.

[0037]c. Drop the above solution onto the silicon substrate placed on the homogenizer, then start the homogenizer, rotate the homogenizer at 200 rpm for 5 seconds, and rotate at 3000 rpm for 15 seconds, so that the dripped solution is coated After the cloth is uniform, the substrate is dried at 100°C, and then the aforementioned solution is dripped and spin-coated again, and then dried again. This is repeated 8 times, and a precursor thin film sample with a certain thickness is obtained on the silicon substrate.

[0038] d. Put the precursor thin film sample obtained by the above process into an airtight container, and put 18.182 parts of hydrazin...

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Abstract

The invention provides a method for preparing a tin selenide photoelectric thin film material, belonging to the technical field of photoelectric thin film preparation. The method comprises the following steps: firstly washing a chip, then putting SnCl2.2H2O and SeO2 into solvents, obtaining a precursor thin film on the chip by a spin coating method and drying the precursor thin film, putting the precursor thin film into a closed container with diamide hydrate, ensuring the precursor thin film sample not to be contacted with diamide hydrate, heating the closed container filled with the precursor thin film sample, taking out the sample and cooling and drying the sample, thus obtaining the tin selenide photoelectric thin film. The method has the following beneficial effects: the method dispenses with the conditions of high temperature and high vacuum, has low requirements for apparatuses, is low in production cost and high in production efficiency and is easy to operate; the tin selenide photoelectric thin film has better continuity and uniformity; the components and structure of the target product are easy to control by the new process; and the production method which is low in cost and can realize industrialization is provided for preparing the tin selenide photoelectric thin film with high performance.

Description

technical field [0001] The invention belongs to the technical field of photoelectric thin film preparation, and in particular relates to a method for preparing tin selenide photoelectric thin film. Background technique [0002] With the development of society and economy, my country's total energy consumption has increased sharply, and energy shortages and pollution caused by energy consumption have become prominent problems in domestic social development. Harmonious society is of great significance. In order to make full use of solar energy, which is a clean, safe and environmentally friendly renewable resource, the research and development of optoelectronic materials has been paid more and more attention in recent years. [0003] Tin selenide is an important IV-VI semiconductor with an indirect band gap of 0.90eV and a direct band gap of 1.30eV, which can absorb most of the solar spectrum. As an abundant, environmentally friendly and chemically stable semiconductor materi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22C04B41/50H01L31/18
CPCY02P70/50
Inventor 刘科高孙齐磊纪念静石磊许斌
Owner SHANDONG JIANZHU UNIV
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