One-dimensional tin selenide nanoarray as well as preparation method and application thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
- Publication Date
- 2014-01-01
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to the technical field of inorganic compound semiconductor nanomaterials, in particular to a one-dimensional tin selenide nanoarray, its preparation method and application. Background technique
[0002] Due to their unique physical and chemical properties, binary IV-VI compounds have potential application prospects in phase change memories, topological insulators, field effect transistors, thermoelectric and multi-exciton photovoltaic cells, and have been widely studied recently. Among them, tin selenide (SnSe) is an important p-type semiconductor compound. At room temperature, the direct band gap of the bulk material is 1.3eV, and the indirect band gap is 0.9eV. Due to its unique layered structure, abundant reserves, environmental friendliness and chemical stability, it has recently attracted a lot of research interest from scientists.
[0003] Due to the high specific surface area and high sensitivity of nanomaterials, the prep...