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One-dimensional tin selenide nanoarray as well as preparation method and application thereof

A nano-array, tin selenide technology, applied in the direction of nanotechnology, binary selenium/tellurium compound, gaseous chemical plating, etc., can solve the problem of no discovery

Active Publication Date: 2014-01-01
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are no reports of SnSe nanostructures with one-dimensional nanoarray structures, and vertically aligned one-dimensional nanoarrays with the same orientation, high specific area, and specific spatial structure synergistic effects may exhibit superior properties over nanoparticles.

Method used

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  • One-dimensional tin selenide nanoarray as well as preparation method and application thereof
  • One-dimensional tin selenide nanoarray as well as preparation method and application thereof
  • One-dimensional tin selenide nanoarray as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] Example 1 Preparation of one-dimensional tin selenide nanoarrays by chemical vapor deposition

[0075] (1) Mix 5g of high-purity (purity 99.999%) SnSe powder and 0.2g of bismuth powder (purity 99.99%) thoroughly, grind them in a mortar for 40min, and use them as growth evaporation sources;

[0076] (2) Place the silicon wafer in a mixed solution of 21mL of concentrated sulfuric acid and 7mL of hydrogen peroxide, heat it to 130°C, and clean the surface of the silicon wafer for 2 hours; then ultrasonicate the silicon wafer with deionized water and dry it with nitrogen gas to serve as the substrate of the silicon wafer;

[0077] (3) Take 0.1 g of the powder prepared in step (1) and place it in the central temperature zone of a tube reactor (OTF-1200X (single temperature zone) open vacuum tube furnace, Hefei Kejing, Anhui) as an evaporation source , and place the growth substrate 30cm below the airflow;

[0078] (4) Pass 35sccm argon gas into the tube reactor, and clean it...

Embodiment 2

[0084] Example 2 Preparation of one-dimensional tin selenide nanoarrays by chemical vapor deposition

[0085] (1) Fully mix 5g of high-purity (purity 99.8%) SnSe powder and 0.2g of bismuth powder (purity 99.9%), and grind them in a mortar for 60 minutes as a growth evaporation source;

[0086] (2) Place the silicon wafer in a mixed solution of 21mL of concentrated sulfuric acid and 7mL of hydrogen peroxide, heat it to 130°C, and clean the surface of the silicon wafer for 2h; then ultrasonicate the silicon wafer with deionized water and blow it dry with nitrogen, as a growing silicon wafer base;

[0087] (3) Take 0.1 g of the powder prepared in step (1) and place it in the central temperature zone of a tube reactor (OTF-1200X (single temperature zone) open vacuum tube furnace, Hefei Kejing, Anhui) as an evaporation source material, and place the growth substrate 31 cm below its airflow;

[0088] (4) Pass 35sccm argon gas into the tube reactor, and clean it three times continu...

Embodiment 3

[0091] Example 3 Preparation of one-dimensional tin selenide nanoarrays by chemical vapor deposition

[0092] (1) Fully mix 5g of high-purity (purity 99.8%) SnSe powder and 0.2g of bismuth powder (purity 99.9%), and grind them in a mortar for 40min as a growth evaporation source;

[0093] (2) Place the silicon wafer in a mixed solution of 21mL of concentrated sulfuric acid and 7mL of hydrogen peroxide, heat it to 130°C, and clean the surface of the silicon wafer for 2h; then ultrasonicate the silicon wafer with deionized water and blow it dry with nitrogen, as a growing silicon wafer base;

[0094] (3) Take 0.1 g of the powder prepared in step (1) and place it in the central temperature zone of a tube reactor (OTF-1200X (single temperature zone) open vacuum tube furnace, Hefei Kejing, Anhui) as an evaporation source material, and place the growth substrate 30 cm below its airflow;

[0095] (4) Pass 35sccm argon gas into the tube reactor, and clean it three times continuously...

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Abstract

The invention discloses a one-dimensional tin selenide nanoarray as well as a preparation method and an application thereof. The one-dimensional tin selenide nanoarray consists of tin selenide nanowires growing in the same direction and arranged in an array form. The one-dimensional tin selenide nanoarray is prepared by depositing tin selenide as a raw material under the action of a catalyst with a chemical vapor deposition method, is applicable to NTC (negative temperature coefficient) thermistors and has an excellent negative temperature coefficient. The preparation method of the one-dimensional tin selenide nanoarray has the advantages of low cost, simple synthesizing step, high speed, good crystallinity and controllable morphology.

Description

technical field [0001] The invention relates to the technical field of inorganic compound semiconductor nanomaterials, in particular to a one-dimensional tin selenide nanoarray, its preparation method and application. Background technique [0002] Due to their unique physical and chemical properties, binary IV-VI compounds have potential application prospects in phase change memories, topological insulators, field effect transistors, thermoelectric and multi-exciton photovoltaic cells, and have been widely studied recently. Among them, tin selenide (SnSe) is an important p-type semiconductor compound. At room temperature, the direct band gap of the bulk material is 1.3eV, and the indirect band gap is 0.9eV. Due to its unique layered structure, abundant reserves, environmental friendliness and chemical stability, it has recently attracted a lot of research interest from scientists. [0003] Due to the high specific surface area and high sensitivity of nanomaterials, the prep...

Claims

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Application Information

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IPC IPC(8): C01B19/04B82Y40/00C23C16/30H01C7/04
Inventor 何军曹金利王振兴
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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