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Spiral-dislocation-driven preparation method for growing spiral laminar tin selenide nanosheets

A screw dislocation, tin selenide technology, applied in nanotechnology, binary selenium/tellurium compounds, metal selenide/telluride and other directions, can solve the problems of tin selenide nanosheets that are rarely studied, and achieve low cost, Simple to use effects

Active Publication Date: 2017-05-31
FUJIAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, a series of SnSe nanostructures such as SnSe nanoflowers, nanosheets, and nanowires have been synthesized by chemical methods; however, some unique nanostructures such as atomically thick helical layered SnSe Nanosheets are rarely studied

Method used

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  • Spiral-dislocation-driven preparation method for growing spiral laminar tin selenide nanosheets
  • Spiral-dislocation-driven preparation method for growing spiral laminar tin selenide nanosheets
  • Spiral-dislocation-driven preparation method for growing spiral laminar tin selenide nanosheets

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preparation example Construction

[0032] A method for preparing helical layered tin selenide nanosheets driven by helical dislocations, comprising the following steps:

[0033] 1) At room temperature, configure a benzyl alcohol solution of stannous chloride with a concentration of 0.4-1.0mmol / L, selenium dioxide with a concentration of 0.4-1.0mmol / L and polyvinylpyrrolidone with a concentration of 160-400g / L , and mix well;

[0034] 2) Transfer the uniformly mixed solution to a three-neck round bottom flask for sealing and stirring, and slowly pass in protective gas;

[0035] 3) In a protective gas atmosphere, heat the solution to 190-210°C and keep it at a constant temperature for 12-18 hours;

[0036] 4) After cooling the solution naturally to room temperature, centrifuge at a speed of 900-1100rpm for 12-18min, wash and filter the centrifuged product with absolute ethanol, and store it in absolute ethanol solution to obtain a helical dislocation-driven Growth of helical layered tin selenide nanosheets.

...

Embodiment 1

[0044] A method for preparing helical layered tin selenide nanosheets driven by helical dislocations, comprising the following steps:

[0045] 1) At room temperature, configure stannous chloride with a concentration of 0.8mmol / L, selenium dioxide with a concentration of 0.8mmol / L, and polyvinylpyrrolidone with a concentration of 320g / L, and the ratio is 1mmol / L: 1 mmol / L L: 400g / L benzyl alcohol solution, and mix well;

[0046] 2) Transfer the uniformly mixed solution to a three-necked round-bottom flask for sealing and stirring, and slowly inject nitrogen;

[0047] 3) In a nitrogen atmosphere, heat the solution to 200°C and keep it at a constant temperature for 12 hours;

[0048] 4) After cooling the solution to room temperature naturally, centrifuge at 1000rpm for 10min, wash and filter the centrifuged product with absolute ethanol, and store it in absolute ethanol solution, that is, to obtain a helical periodicity with atomic thickness The helical dislocation drives the g...

Embodiment 2

[0050] A method for preparing helical layered tin selenide nanosheets driven by helical dislocations, comprising the following steps:

[0051] 1) At room temperature, configure stannous chloride with a concentration of 0.4mmol / L, selenium dioxide with a concentration of 0.4mmol / L, and polyvinylpyrrolidone with a concentration of 160g / L, and the ratio is 1mmol / L: 1 mmol / L L: 400g / L benzyl alcohol solution, and mix well;

[0052] 2) Transfer the uniformly mixed solution to a three-neck round bottom flask for sealing and stirring, and slowly inject argon;

[0053] 3) In an argon atmosphere, heat the solution to 210°C and keep it at a constant temperature for 18 hours;

[0054]4) After the solution was naturally cooled to room temperature, it was centrifuged at 900rpm for 12 minutes, and the centrifuged product was washed and filtered with absolute ethanol, and stored in absolute ethanol solution, that is, a helical periodicity with atomic thickness was obtained. The helical dis...

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Abstract

The invention discloses a spiral-dislocation-driven preparation method for growing spiral laminar tin selenide nanosheets. A solvent-process technical line is utilized to prepare the spiral laminar tin selenide nanosheets, and the concentration of the precursor solution is controlled to control the tin selenide nanosheets so as to drive growth under the action of spiral dislocation. The method is simple to operate and low in cost; and the spiral laminar tin selenide nanosheets have spiral periodicity with atom-level thickness.

Description

technical field [0001] The invention relates to the field of preparation of tin selenide nanosheets, in particular to a method for preparing helical dislocation-driven growth helical layered tin selenide nanosheets. Background technique [0002] Two-dimensional materials with atomic thickness, including graphene, boron nitride, and transition metal sulfides, etc., have shown new properties different from their bulk materials, making them have good application prospects in electronic devices and optoelectronic devices. However, there are still important challenges in growing 2D materials with controllable thickness, size, structure, symmetry, and composition. As a P-type semiconductor material with abundant storage, low toxicity and good chemical stability, tin selenide has good application prospects in solar cells, photodetectors and near-infrared optoelectronic devices. So far, a series of SnSe nanostructures such as SnSe nanoflowers, nanosheets, and nanowires have been sy...

Claims

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Application Information

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IPC IPC(8): C01B19/04B82Y40/00
CPCC01B19/007C01P2002/72C01P2002/82C01P2002/84C01P2002/85C01P2004/03C01P2004/04C01P2004/22
Inventor 刘金养黄青青徐杨阳钱永强林丽梅黄志高赖发春
Owner FUJIAN NORMAL UNIV
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