Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Single-crystal tin selenide pyroelectric thin film and preparing method thereof

A technology of thermoelectric thin film and tin selenide, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of inapplicability to large-scale process production and application, complex preparation process, and low performance, and achieve parameters Easy control and optimization, simple preparation method, high power factor effect

Active Publication Date: 2019-08-27
ZHEJIANG NORMAL UNIVERSITY
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the methods for preparing SnSe thin films include thermal evaporation, pulsed laser deposition, chemical vapor deposition, etc., but these methods generally have disadvantages such as complex preparation process, low output, high cost, and high energy consumption, and the prepared polycrystalline thin film has high performance. Not high, not suitable for large-scale process production and application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single-crystal tin selenide pyroelectric thin film and preparing method thereof
  • Single-crystal tin selenide pyroelectric thin film and preparing method thereof
  • Single-crystal tin selenide pyroelectric thin film and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This embodiment provides a method for preparing a single crystal tin selenide thermoelectric thin film, comprising the following steps:

[0043] S1. Take an ordinary glass substrate, place it in a mixture of absolute ethanol and deionized water, and ultrasonically clean it for 10 minutes at room temperature to remove oil and impurities on the surface of the ordinary glass substrate. After cleaning, take out the ordinary glass substrate and place it on the In the oven, heat up the oven to 120°C, dry at atmospheric pressure for 2 hours, take it out and cool to room temperature naturally;

[0044] S2. Put the ordinary glass substrate processed in step S1 on the sample stage of the spin coater, and before adding the graphene oxide dispersion, shake the container containing the graphene oxide dispersion to make it uniform, and then Add 0.3mL of graphene oxide dispersion with a concentration of 5mg / mL dropwise to the surface of the common glass substrate, so that the graphene...

Embodiment 2

[0048] This embodiment provides a method for preparing a single crystal tin selenide thermoelectric thin film, comprising the following steps:

[0049] S1. Take an ordinary glass substrate, place it in a mixture of absolute ethanol and deionized water, and ultrasonically clean it for 10 minutes at room temperature to remove oil and impurities on the surface of the ordinary glass substrate. After cleaning, take out the ordinary glass substrate and place it on the In the oven, heat up the oven to 120°C, dry at atmospheric pressure for 2 hours, take it out and cool to room temperature naturally;

[0050]S2. Put the ordinary glass substrate processed in step S1 on the sample stage of the spin coater, and before adding the graphene oxide dispersion, shake the container containing the graphene oxide dispersion to make it uniform, and then Add 0.3mL of graphene oxide dispersion with a concentration of 5mg / mL dropwise to the surface of the common glass substrate, so that the graphene ...

Embodiment 3

[0054] This embodiment provides a method for preparing a single crystal tin selenide thermoelectric thin film, comprising the following steps:

[0055] S1. Take the mica substrate, place it in a mixture of absolute ethanol and deionized water, and ultrasonically clean it for 10 minutes at room temperature to remove oil and impurities on the surface of the mica substrate. After cleaning, take out the mica substrate and place it in an oven. Heat up the oven to 150°C, dry at atmospheric pressure for 2 hours, take it out and let it cool down to room temperature naturally;

[0056] S2, put the treated mica substrate in step S1 on the sample stage of the spin coater, before adding the graphene oxide dispersion, first shake the container with the graphene oxide dispersion to make it uniform, and then Add 0.5mL of graphene oxide dispersion with a concentration of 3mg / mL dropwise on the surface of the mica substrate, so that the graphene oxide dispersion completely covers the upper sur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a single-crystal tin selenide pyroelectric thin film and a preparing method thereof, and belongs to the field of pyroelectric materials. The preparing method of the single-crystal tin selenide pyroelectric thin film includes the following steps of taking a substrate, putting the substrate in cleaning liquid for ultrasonic cleaning for 20 minutes, drying the substrate for 2hours at 60-150 DEG C after cleaning, taking out the substrate to be naturally cooled, putting the processed substrate onto a spinner, dropwise adding dispersion liquid onto the surface of the substrate, conducting spinning for 10-60 seconds, taking out the substrate after spinning, drying the substrate for 5-10 minutes at 200 DEG C to obtain a buffering layer substrate, putting a tin selenide sputtering target material and the prepared buffering layer substrate into a high-vacuum multifunctional magnetron sputtering film coating instrument for vacuumizing, heating the buffering layer substrate, and introducing inert gas for sputtering for 20-60 minutes to obtain the single-crystal tin selenide pyroelectric thin film. The preparing method has the advantages that the preparing process is simple, and the prepared single-crystal tin selenide pyroelectric thin film is high in single crystallinity and power factor.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, in particular to a single crystal tin selenide thermoelectric thin film and a preparation method thereof. Background technique [0002] Thermoelectric material is a functional material that utilizes the interaction and transport characteristics of carriers and phonons in solid materials to realize direct mutual conversion between thermal energy and electrical energy. The thermoelectric power generation technology based on thermoelectric materials can directly convert waste heat directly Converted into electrical energy, improving the efficiency of energy use. Thermoelectric refrigerators made of thermoelectric materials have the advantages that mechanical compression refrigerators cannot match: small size, light weight, no mechanical rotating parts, no noise in operation, no liquid or gaseous media, and no pollution to the environment. Accurate temperature control, fast response, long ser...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B23/00
CPCC30B23/00C30B29/46
Inventor 斯剑霄陈子洁申彤李康银
Owner ZHEJIANG NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com