Indium sulfide doped cuprous sulfide thermoelectric material and preparation method thereof

A technology of cuprous sulfide and thermoelectric materials, which is applied in the direction of copper sulfide, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of restricting large-scale application, Te element poisonous earth content, etc., and achieves easy macro preparation and simple preparation method Ease of operation, the effect of inhibiting high temperature phase transition

Inactive Publication Date: 2018-02-09
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

CuInTe prepared by this invention 2 Has high thermoelectric conversion efficiency, but

Method used

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  • Indium sulfide doped cuprous sulfide thermoelectric material and preparation method thereof
  • Indium sulfide doped cuprous sulfide thermoelectric material and preparation method thereof
  • Indium sulfide doped cuprous sulfide thermoelectric material and preparation method thereof

Examples

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Effect test

Embodiment 1

[0039] Cuprous sulfide thermoelectric material, the specific preparation method is as follows:

[0040] (1) Weigh 3g of cuprous sulfide powder, place it in an agate mortar, and grind it for 30 minutes with an agate mortar.

[0041] (2) Put the ground powder into a graphite mold with an inner diameter of 12.7mm, and apply a pressure of 50MPa at both ends of the mold, and then vacuumize the SPS sintering furnace cavity. When the vacuum degree is less than 2Pa, start high-temperature sintering , Gradually increase the current during sintering to increase the temperature. After 12 minutes, the temperature rises to 600°C, keep at 600°C for 5 minutes, and then end the sintering process, and immediately remove the pressure at both ends of the mold. The sample was allowed to cool down to room temperature naturally while maintaining a constant vacuum.

Embodiment 2

[0043] Indium sulfide doped cuprous sulfide thermoelectric material, the specific preparation method is as follows:

[0044] (1) take by weighing 3g cuprous sulfide powder and place in agate mortar, then take by weighing the indium sulfide powder that is equivalent to 3g cuprous sulfide and be 1% molar percentage in agate mortar, and the two are fully mixed, then Grind with an agate mortar for 30 minutes.

[0045] (2) Put the ground powder into a graphite mold with an inner diameter of 12.7mm, and apply a pressure of 50MPa at both ends of the mold, and then vacuumize the SPS sintering furnace cavity. When the vacuum degree is less than 2Pa, start high-temperature sintering , Gradually increase the current during sintering to increase the temperature. After 12 minutes, the temperature rises to 600°C, keep at 600°C for 5 minutes, and then end the sintering process, and immediately remove the pressure at both ends of the mold. The sample was allowed to cool down to room temperat...

Embodiment 3

[0047] Indium sulfide doped cuprous sulfide thermoelectric material, the specific preparation method is as follows:

[0048] (1) take by weighing 3g cuprous sulfide powder and place in agate mortar, then take by weighing the indium sulfide powder that is equivalent to 3g cuprous sulfide and be 2% molar percentage in agate mortar, and the two are fully mixed, then Grind with an agate mortar for 30 minutes.

[0049] (2) Put the ground powder into a graphite mold with an inner diameter of 12.7mm, and apply a pressure of 50MPa at both ends of the mold, and then vacuumize the SPS sintering furnace cavity. When the vacuum degree is less than 2Pa, start high-temperature sintering , Gradually increase the current during sintering to increase the temperature. After 12 minutes, the temperature rises to 600°C, keep at 600°C for 5 minutes, and then end the sintering process, and immediately remove the pressure at both ends of the mold. The sample was allowed to cool down to room temperat...

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Abstract

The present invention discloses an indium sulfide doped cuprous sulfide thermoelectric material and a preparation method thereof, wherein the general formula is Cu2S-xIn2S3, and x is the mole percentof indium sulfide to cuprous sulfide. The preparation method comprises two steps such as manual grinding and discharge plasma sintering, and specifically comprises: weighing a certain mass of cuproussulfide and the corresponding molar percentage of indium sulfide, completely mixing the two materials, grinding for 30-60 min by using an agate mortar, and completing sintering, doping and material preparation in one step by using a discharge plasma sintering technology (SPS) to obtain the compact bulk thermoelectric material. According to the present invention, the preparation method is simple, rapid and efficient, and the power factor of cuprous sulfide is significantly improved so as to significantly improve the thermoelectric performance of cuprous sulfide; and by introducing indium sulfide, the phase change of cuprous sulfide at the high temperature is suppressed, such that the practical application of the material can be easily achieved.

Description

technical field [0001] The invention relates to the field of thermoelectric materials, in particular to an indium sulfide (In 2 S 3 ) doped cuprous sulfide (Cu 2 S) thermoelectric material and preparation method. Background technique [0002] The rapid development of the global economy leads to excessive energy consumption, which not only triggers the energy crisis in the world today, but also makes environmental problems increasingly prominent. Today, when the development of new energy technologies is emphasized, people often ignore the fact that more than 60% of the energy we use is lost in the form of waste heat. Thermoelectric materials and their technology can convert this part of the waste heat that should be lost into electrical energy, which is of great significance for solving energy crisis and environmental problems. The energy conversion efficiency of thermoelectric materials is proportional to the thermoelectric figure of merit ZT, ZT=S 2 σT / κ, where S repre...

Claims

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Application Information

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IPC IPC(8): C01G3/12C01G15/00
CPCC01G3/12C01G15/00C01P2002/72C01P2004/82
Inventor 姜鹏孟庆龙包信和
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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