55 results about "Indium(III) sulfide" patented technology

The invention discloses a hexagonal bismuth phosphate modified indium zinc sulfide (ZIS / HBIP) composite catalyst and a preparation method thereof. The catalyst is applied to photocatalytic synthesis of HO. The indium zinc sulfide (ZIS) nano flower balls in the catalyst are prepared by a hydrothermal method, and then hexagonal bismuth phosphate (HBIP) is loaded on the surface of the ZIS by a room temperature precipitation method to obtain a series of ZIS / HBIP composite catalysts. ZIS and HBIP can effectively improve photo-induced electron-hole separation and transmission, improve the selectivity of direct two-electron oxygen reduction reaction (2eORR) and inhibit HO decomposition. Experimental results show that when the theoretical dosage of HBIP is 0.01 mmol, the prepared ZIS / HBIP 0.01 has the optimal photocatalytic activity, the HO yield within 1 h can reach about 955 [mu] mol.g.h, and efficient synthesis of HO in pure water is achieved.

The invention relates to a hydrogel-based composite photocatalyst and a preparation method thereof, and belongs to the technical field of photocatalytic degradation. Specifically, an olefin functional group is introduced to the surface of an indium zinc sulfide catalyst through silanization modification, the catalyst is connected to a hydrogel skeleton through a covalent bond by means of free radical polymerization, and the hydrogel-based composite photocatalyst with good recovery performance and catalytic stability is prepared. The composite photocatalyst prepared by the invention has excellent photocatalytic performance, and can be applied to photodegradation and removal of dyes in water.

The invention discloses an indium manganese sulfide-covalent organic framework MIS / BT50 composite photocatalyst as well as a preparation method and application thereof, and belongs to the technical field of photocatalysis. According to the preparation method, a solvothermal method synthesis strategy is adopted, indium manganese sulfide is introduced into a covalent organic framework, and the indium manganese sulfide-covalent organic framework MIS / BT50 composite photocatalyst is constructed; the composite photocatalyst has excellent visible light response capability, hydrogen peroxide can be efficiently prepared under visible light, and the yield of hydrogen peroxide in a pure water system reaches up to 3519 [mu] mol.g <-1 >. H <-1 >; meanwhile, under the condition that no extra iron source is added, the composite photocatalyst can rapidly inactivate escherichia coli in a water body, and the limitation that a traditional Fenton reaction depends on the iron source is broken through; the invention discloses a preparation method of the composite photocatalyst, and a solvothermal method is simple and controllable in preparation process, mild in reaction condition, high in raw material utilization rate and suitable for large-scale production.

The invention provides a method for preparing a composite catalyst by recovering an ITO waste target and the composite catalyst. The preparation method comprises the following steps: mixing an ITO waste target with sulfur, heating to 300-430 DEG C in an inert atmosphere, carrying out a vulcanization reaction, and cooling to room temperature after the reaction is finished, so as to obtain the In2S3 / In4SnS8 / In2O3 composite catalyst. The composite catalyst is composed of In2S3, In4SnS8 and In2O3, and is an In2S3 / In4SnS8 / In2O3 composite catalyst with a heterojunction structure. Compared with a traditional ITO waste target recovery technology, the method for recycling the waste into the indium sulfide-based catalytic material through one step of vulcanization has the advantages that valuable elements indium and tin in the waste target are recovered in the form of a catalyst material, tin loss of a wet process is avoided, and the problems that a pyrogenic process is high in temperature, low in cost and the like are solved. And the product still needs to be further processed.

The application belongs to the field of photocatalytic water decomposition, and relates to a hollow indium zinc sulfide composite catalyst material loaded with double cocatalysts and a preparation method and application thereof. The material is a composite material of double metal chalcogenide indium zinc sulfide and MnO2 and Ti3C2, the MnO2 has a hollow spherical structure, the indium zinc sulfide has a two-dimensional sheet structure, the indium zinc sulfide is coated on the outer surface of the MnO2 to form a composite spherical structure, and the Ti3C2 is attached to the surface of the composite spherical structure. The catalyst material not only has a higher specific surface area to provide more surface active sites, but also can enhance the refraction and reflection of light, thereby improving the utilization efficiency of light. The MnO2 and the Ti3C2 can be used as hole-type and electron-type cocatalysts respectively, and the unique carrier transport path thereof promotes the separation and transfer of photo-generated carriers, thereby enhancing the photocatalytic hydrogen production and benzyl alcohol oxidation performance of the material.

The application discloses a graphene quantum dot / indium sulfide electromagnetic wave absorbing material and a preparation method thereof, and comprises the following steps: carrying out a hydrothermal reduction reaction on trinitro-pyrene and an alkaline solution to obtain graphene quantum dot powder rich in hydroxyl functional groups on the surface; and carrying out a hydrothermal reaction on a mixture of indium chloride tetrahydrate and thioacetamide and the graphene quantum dot powder to obtain a graphene quantum dot / indium sulfide heterojunction electromagnetic wave absorbing material with a sulfur vacancy concentration of 3.8% to 5.7%. The addition amount of the sulfur source is controlled by regulating the addition amount of the thioacetamide in the hydrothermal reaction process, the introduced sulfur vacancy concentration is accurately controlled, the In-O covalent bond is formed at the interface between the graphene quantum dot and the indium sulfide, the interface covalent bridging structure is formed, the interface charge transfer efficiency is accelerated, the built-in electric field in the interface is enhanced, stronger interface polarization loss is induced, and the performance of high absorption intensity and wide bandwidth of the composite wave absorbing material is realized.

This invention proposes a method for preparing and applying an indium sulfide photocatalytic material with specific vacancies. The method involves forming a first solution with ethanol and deionized water; dissolving InCl3·4H2O and thioacetamide, or InCl3·4H2O, thioacetamide, and hexamethylenetetramine, in the first solution by stirring; obtaining a clear solution; reacting the clear solution at a constant temperature; cooling after the reaction; and collecting the product by centrifugation; washing the product; and drying it at a constant temperature; finally, obtaining the photocatalytic material with specific vacancies. This invention introduces vacancies into In2S3, thereby regulating the surface active sites, enhancing its light utilization efficiency and the separation and transfer ability of photogenerated carriers, and improving the photocatalytic activity of N2 to NH3 reduction.

The invention discloses a method for producing hydrogen peroxide by using an amino-functionalized metal organic framework / indium sulfide photocatalyst, the method is characterized in that the amino-functionalized metal organic framework / indium sulfide photocatalyst is used as a catalyst to carry out photocatalytic reaction on a water body to produce hydrogen peroxide, the adopted photocatalyst comprises UiO-66-NH2, and In2S3 is anchored on the surface of the UiO-66-NH2. In the invention, the adopted amino-functionalized metal organic framework / indium sulfide photocatalyst has the advantages of high photocatalytic activity, physical and chemical stability, strong visible light absorption capacity and the like, can efficiently produce hydrogen peroxide in a sacrificial agent-free system, and can obviously improve the yield of photocatalytic H2O2; the method has the advantages of simple process, convenience in operation, high treatment efficiency, low cost, no secondary pollution and the like, is a method which can be widely adopted and can realize efficient production of H2O2, and has very high application value and commercial value.

The invention belongs to the technical field of photocatalysis, and provides a preparation method and application of a composite photocatalyst for photodegradation of lignin, the preparation method comprises synthesis of indium zinc sulfide, synthesis of bismuth tungstate and preparation of the composite photocatalyst ZnIn2S4 / Bi2WO6, and the composite photocatalyst is used for photodegradation of lignin in water. According to the present invention, the precursor indium zinc sulfide and the bismuth tungstate are synthesized through the hydrothermal method, and according to the morphology, the different response to light and the inherent characteristics of the indium zinc sulfide and the bismuth tungstate, the ZnIn2S4 / Bi2WO6 Z-type heterojunction is constructed from the indium zinc sulfide and the bismuth tungstate through the physical grinding in-situ method, and the composite photocatalyst has characteristics of more active sites, good light absorption ability, good charge transfer efficiency, and good photocatalytic activity. And the capability of photocatalytic degradation of lignin under visible light is obviously improved.

The invention provides an ITO waste target recovery method. The ITO waste target recovery method comprises the following steps: mixing an ITO waste target, sulfur and graphite to obtain a mixture; placing the mixture in an inert environment, heating the mixture to 300-430 DEG C, and carrying out a vulcanization reaction to obtain an intermediate after the reaction is finished; heating the intermediate to 1100-1200 DEG C under a first pressure, and obtaining a mixed gas containing indium sulfide and tin sulfide after the reaction is finished; under second pressure intensity, placing the mixed gas containing indium sulfide and tin sulfide at the temperature of 800-850 DEG C, and respectively obtaining condensed indium sulfide and gas containing tin sulfide after the reaction is finished; and placing the gas containing tin sulfide at a temperature of 550-650 DEG C under a third pressure intensity, and obtaining condensed tin sulfide after the reaction is finished. The method provided by the invention is environment-friendly, and the ITO waste target can be recycled to prepare the high-purity indium sulfide.

The invention discloses an indium phosphide polycrystalline material crucible charging method and application thereof, and belongs to the technical field of semiconductor materials. The charging method comprises the following steps: sequentially adding indium phosphide single crystal seeds, an indium phosphide polycrystal material I, a high-purity red phosphorus doped layer, an indium phosphide polycrystal material II, a high-purity indium sulfide doped layer, an indium phosphide polycrystal material III, a liquid sealing agent adding layer, an indium phosphide polycrystal material IV and a cake-shaped indium phosphide polycrystal material into a crucible; wherein the average particle sizes of the indium phosphide polycrystal materials used in the indium phosphide polycrystal material I, the indium phosphide polycrystal material II and the indium phosphide polycrystal material III are sequentially increased. The heat conduction efficiency of the electric heating system of the single crystal furnace to the crucible is effectively improved, melting and fusion of polycrystal materials in the crucible are accelerated, the distribution uniformity of indium phosphide single crystal rod materials and the uniformity of semiconductor properties can be effectively improved, the yield of indium phosphide single crystals is further remarkably improved, and finally the quality of the indium phosphide single crystals is effectively improved.

This invention relates to the application of an indium sulfide-supported bismuth single-atom composite material in hydrogen peroxide production. The indium sulfide-supported bismuth single-atom composite material of this invention comprises indium sulfide and bismuth single atoms supported on the indium sulfide, which are then dried to obtain a composite material (Bi-In₂S₃). The Bi-In₂S₃ composite material obtained by this invention has advantages such as high hydrogen peroxide yield and a simple and controllable preparation process. The Bi-In₂S₃ composite catalyst of this invention exhibits excellent hydrogen peroxide generation rate under actual catalytic reaction conditions; this is because indium sulfide has a narrow band gap and good visible light absorption performance; in addition, the single-atom bismuth adsorbs oxygen molecules in a Pauling-type configuration, avoiding the breaking of oxygen-oxygen bonds, and exhibiting good selectivity for the reduction of oxygen molecules with two electrons, significantly improving the efficiency of oxygen molecule activation into hydrogen peroxide.

The invention provides a preparation method of a hydrothermal carboxylated cellulose derived carbon dot modified indium tin sulfide (SIS-CDs) composite catalyst. The catalyst has excellent performance in the aspect of photocatalytic synthesis of hydrogen peroxide (H2O2). The preparation method of the catalyst comprises the following steps: synthesizing tin indium sulfide (SnIn4S8, SIS) and a carbon dot solution (CDs) by adopting a solvothermal method and a hydrothermal method respectively, then mixing the two solutions, carrying out oil bath heating under the condition of condensation reflux, and after the reaction, carrying out multiple times of centrifugal washing and drying to obtain the composite material. Wherein the modification of the carbon dots significantly inhibits the recombination of photon-generated carriers, and the carbon dots obtained by hydrothermal carboxylation of cellulose can retain carboxyl groups on the carbon dots, which is beneficial to improving the utilization rate of oxygen (O2) in a reaction system and effectively enriching protons (H +) in water. Experimental results show that when the ratio of a carbon dot solution to water is 60: 40, the composite material has the optimal performance, at the moment, the H2O2 generation rate is 1844 [mu] mol.g <-1 >. H <-1 >, and efficient synthesis of H2O2 is realized in pure water.

The invention discloses an indium sulfide loaded UIO-66-NH2 heterojunction photocatalyst as well as a preparation method and application of the indium sulfide loaded UIO-66-NH2 heterojunction photocatalyst. According to the photocatalyst, a heterostructure is formed by a metal organic framework material UIO-66-NH2 and indium sulfide nanoparticles, wherein indium sulfide is uniformly distributed on the surface of the UIO-66-NH2. During preparation, UIO-66-NH2 is synthesized through a solvothermal method, indium sulfide grows on the surface of UIO-66-NH2 in situ through a hydrothermal method, and a compact heterogeneous interface is constructed. According to the heterostructure, visible light absorption is remarkably enhanced, and the efficiency of photocatalytic production of hydrogen peroxide is greatly improved by promoting effective separation of photo-induced electrons and holes and enhancing adsorption and activation of oxygen molecules. The catalyst is simple and convenient in preparation process, high in catalytic activity and environment-friendly, and has important application value in the fields of green energy synthesis and environmental restoration.

This invention relates to the field of photoelectrochemical technology, and in particular to a nickel-iron / sulfide composite photoanode activated by sacrificial nickel-triggered reconstruction, its preparation method, and its applications. This invention introduces a nickel-iron hydroxyl oxide layer onto the surface of an indium sulfide photoanode, utilizing the PEC activation process to trigger the selective leaching of sacrificial Ni components and surface porosification reconstruction. This drives deep chemical integration of Fe species with the sulfide substrate at the interface, forming stable Fe-S anchoring bonds. Under the synergistic effect of photoelectric bias and illumination, this structure can transform the originally weakly coupled static contact into an adaptive, strongly coupled catalytic interface in situ. While eliminating deep-level traps at the interface, it significantly increases the density of active sites and the interfacial hole transport dynamics, thereby significantly enhancing the current response and energy conversion efficiency of the photoanode in the photoelectrochemical water oxidation process.

The invention provides an ultralow platinum-loaded composite photocatalyst based on indium zinc sulfide as well as a preparation method and application of the ultralow platinum-loaded composite photocatalyst, and belongs to the technical field of photocatalytic materials. The preparation method comprises the following steps: (1) mixing molybdenum carbide with an alcohol reagent for the first time to obtain a dispersion liquid; dropwise adding a chloroplatinic acid solution into the dispersion liquid, carrying out second mixing, adjusting the pH value to 7-8, and carrying out a high-temperature reaction to obtain a Mo2C-Pt composite material; (2) dispersing the Mo2C-Pt composite material in an alcohol reagent to obtain a suspension liquid; sequentially adding a zinc source, an indium source and thioacetamide into the suspension liquid, and stirring until the brownish black mixture becomes a grey white suspension liquid; and carrying out heating reaction on the off-white suspension to obtain the Mo2C-Pt-coated ZIS composite photocatalyst. The obtained ultra-low platinum supported photocatalyst has low cost and high performance, the preparation method is simple, and the photocatalytic hydrogen evolution performance is excellent.

The invention relates to the technical field of batteries, in particular to a sulfide solid electrolyte, a preparation method thereof, a solid electrolyte membrane and a solid-state battery. The sulfide solid electrolyte has a stoichiometric formula Li < 7 + x + 2y > P < 3-x-y > Zr < x > In < y > S < 11 >, the invention creatively proposes that zirconium sulfide (ZrS2) and indium sulfide (In2S3) are used as a group of composite soft network forming agents for partially replacing a phosphorus element in a traditional Li < 7 > P < 3 > S < 11 > electrolyte, and a new material with a specific general formula Li < 7 + x + 2y > P < 3-x-y > Zr < x > In < y > S < 11 > is formed as the sulfide solid electrolyte. Large-radius Zr < 4 + > dominates lattice expansion, and the bonding force is weakened; in < 3 + > plays a role in modulating local charges and stabilizing the structure, and the In < 3 + > and the In < 3 + > cooperate to soften crystal lattices and guarantee the integrity of a lithium ion migration channel to the maximum extent.

The invention discloses a gadolinium and sulfur defect co-modified indium zinc sulfide-based composite photocatalytic material which is characterized by comprising an indium zinc sulfide-based catalytic material and gadolinium and sulfur defects introduced into the surface of the indium zinc sulfide-based catalytic material, the molar weight of gadolinium is 0.5%-20% of the molar weight of the indium zinc sulfide-based catalytic material. The invention also discloses a preparation method of the gadolinium and sulfur defect co-modified indium zinc sulfide-based composite photocatalytic material, and the gadolinium and sulfur defect co-modified indium zinc sulfide-based composite photocatalytic material obtained by the preparation method has the advantages of no agglomeration, wide visible light response range, significantly improved photocatalytic activity compared with pure indium zinc sulfide, good reusability, and wide application prospect. And the preparation process is simple, mild in condition, good in controllability and convenient to operate.

The invention relates to the field of functional materials, in particular to a silver sulfide composite photocatalyst based on indium tin sulfide surface modification and a preparation method thereof.The preparation method comprises the steps that Ag2S nanoparticles are prepared through a two-step hydrothermal method, silver nitrate is dissolved in ultrapure water, TAA is added after magnetic stirring, a hydrothermal reaction is conducted for 3-12 h, precipitates are washed three times through ultrapure water and three times through ethyl alcohol respectively, and normal-pressure drying is conducted for 3-24 h; and lamellar SnIn4S8 is grown on the surface of the SnIn4S8 in situ to form a heterojunction, namely an aqueous solution of Sn < 4 + > and acetic acid is prepared, Ag2S nanoparticles are added for ultrasonic treatment for 10-30 min, TAA is supplemented, hydrothermal treatment is performed for 3-6 h, and centrifugal collection is performed at the speed of 8000-10000 rpm. According to the method, the problems of high carrier recombination rate and insufficient visible light utilization of traditional photocatalysts such as TiO2g-C3N4 are solved, the efficiency retention rate is high after five cycles, XRD (X-Ray Diffraction) has no impurity peak, and the method is suitable for tetracycline antibiotic pollution treatment in water and has wide application prospects.

The invention discloses a selenium-doped indium sulfide film and a preparation method and application thereof, and belongs to the technical field of preparation of two-dimensional semiconductor materials. The preparation method of the selenium-doped indium sulfide thin film comprises the following steps that sulfur serves as a doping source, In2Se3 and In2S3 serve as growth sources, deposition is conducted on a substrate through a chemical vapor deposition method, and the selenium-doped indium sulfide thin film is obtained. The selenium-doped indium sulfide thin film (Se-In2S3 thin film) prepared by the method is moderate in size, uniform in thickness and regular in shape, has good photoelectric response performance, is a good semiconductor material, and is suitable for optical communication devices, thermal imaging devices and the like from a visible light wave band to a near-infrared wave band.

The invention discloses a photocatalyst as well as a preparation method and application thereof in coal mine water treatment, and belongs to the technical field of photocatalysis. According to the photocatalyst, indium zinc sulfide with a unique nanoflower structure is used as a substrate, and silver-nickel alloy nanoparticles with good conductivity are loaded on the surface of the substrate; an efficient synergistic effect is formed between the silver-nickel alloy nanoparticles and the indium zinc sulfide nanoflowers. On one hand, the structure advantage of the nanoflower morphology on indium zinc sulfide and the property of the bimetallic silver-nickel alloy are combined, and the widened light absorption range is obtained; on the other hand, after the cocatalyst is introduced, carrier separation and transportation are facilitated by means of excellent conductivity of the bimetallic silver-nickel alloy, and the photocatalytic performance of the indium zinc sulfide nanoflower is enhanced. When being used for treating coal mine wastewater, the coal mine wastewater treatment agent shows the beneficial effect of synergistic interaction, specifically, the coal mine wastewater treatment agent has the efficient and synchronous removal capacity on typical heavy metal pollutants and organic pollutants, and the technical effect is obviously superior to that of a single component or the prior art.

The invention discloses a nitrogen-doped synergistic polyethyleneimine grafted indium zinc sulfide (N-ZIS / PEI) composite material and a preparation method thereof, and belongs to the technical field of photocatalytic materials. The preparation method comprises the following steps: dissolving Zn (Ac) 2.2 H2O and InCl3. 4H2O in deionized water, adding CH3CSNH2 (TAA), and carrying out a hydrothermal reaction, so as to obtain the ZIS flower-like microspheres. And then adding a PEI solution with a molecular chain of 7W into water, dropwise adding into the ultrasonically dispersed ZIS solution, and preparing a series of N-ZIS / PEI materials by controlling the concentration of PEI. Impurity defect energy level introduced by nitrogen doping provides more electrons for oxygen reduction reaction; the surface grafted PEI molecules can effectively adsorb oxygen and enrich protons in water, and provide sufficient reactants for oxygen reduction reaction, so that efficient photocatalytic synthesis of H2O2 in pure water is realized. The H2O2 yield of N-ZIS / PEI in pure water under visible light reaches 1250 [mu] mol.g <-1 >. H <-1 >.

The application discloses layered structure indium zinc sulfide ZnIn4S7 flaky particle and a preparation method and application thereof, and belongs to the technical field of photocatalytic material preparation. According to a certain molar ratio of Zn:In:S:alkali, a sulfur source, a zinc source, an indium source and alkali are mixed and uniformly ground, and are put into a closed system at a certain filling ratio, and after being kept at 100-250 DEG C for 1-12 hours, a new layered structure indium zinc sulfide ZnIn4S7 flaky particle is obtained through water washing, suction filtration and drying. In the preparation process of the layered structure indium zinc sulfide ZnIn4S7 flaky particle, no solvent is needed, and the reaction time is short (ZnIn4S7 flaky particles can be obtained only after 1 hour of reaction), and the layered structure indium zinc sulfide ZnIn4S7 flaky particle has the advantages of simple process, short time consumption, low energy consumption, low cost, high yield, no toxic gas emission, no pollution, suitability for mass production and the like. In addition, the new layered structure indium zinc sulfide ZnIn4S7 flaky particle prepared by the application is applied to the field of degradation of organic pollutants and hydrogen production by water photolysis as a visible light photocatalyst.

The invention discloses a Pt / Vs-ZnIn2S4 photocatalyst and a preparation method and application thereof.The preparation method comprises the steps that soluble zinc salt, soluble indium salt, sodium hydroxide and citric acid monohydrate are fully dissolved in a mixed solvent of deionized water and ethylene glycol, then thioacetamide is added for a hydrothermal reaction, and Vs-ZnIn2S4 is prepared; the preparation method comprises the following steps: dispersing Vs-ZnIn2S4 in a mixed solvent of deionized water and methanol, and adding chloroplatinic acid for illumination reaction in an inert atmosphere and under full-spectrum irradiation of a xenon lamp to prepare the Pt / Vs-ZnIn2S4 photocatalyst. Sulfur vacancies are constructed on the surface of indium zinc sulfide, the sulfur vacancies are induced by illumination to migrate and load platinum monatomic atoms, and the platinum monatomic atoms and the sulfur vacancies have a synergistic effect, so that not only is the separation efficiency of photon-generated carriers improved, but also the absorption capacity to visible light is enhanced, more active sites are provided for catalytic reaction, and the photocatalytic activity of the indium zinc sulfide is improved. Therefore, the catalytic performance is obviously improved.

The invention discloses an indium sulfide doped 6.5-inch N-type indium phosphide single crystal and a preparation method thereof, and belongs to the technical field of semiconductor materials, the indium sulfide doped 6.5-inch N-type indium phosphide single crystal comprises the following raw materials: an InP polycrystal material, anhydrous diboron trioxide, red phosphorus and indium sulfide; the preparation method comprises the following steps: adding the raw materials into a crucible, and then putting the crucible into a quartz Dewar tube for melting and sealing; the quartz Dewar tube is placed in a single crystal furnace for heat treatment, and the indium sulfide doped N-type indium phosphide single crystal is prepared. According to the method, by strictly controlling the stoichiometric ratio and establishing an excellent single crystal growth preparation environment, the radial temperature gradient and the longitudinal temperature gradient of a polycrystalline material melt in a crucible are reasonable, the large-size high-quality N-type indium phosphide crystal with small internal stress and low dislocation density is grown, the resistivity is smaller than 1.08 * 10 <-3 > omega.cm, and the electron mobility exceeds 2680 cm < 2 > / V.s.

The invention relates to a polystyrene composite material as well as a preparation method and application thereof. The polystyrene composite material comprises the following components in parts by weight: 100 parts of polystyrene resin, 0.1-0.3 part of a composite neutral filter, 3-6 parts of nano zinc oxide and 0.5-1.5 parts of a light stabilizer, the composite neutral filter comprises the following components: indium sulfide and black iron oxide. According to the polystyrene composite material provided by the invention, through the design of the components and the mutual cooperation of the components, the polystyrene composite material has a broadband neutral filtering characteristic and excellent environmental stability and processability.

The invention discloses a carbon quantum dot / indium sulfide ohmic junction and a preparation method and application thereof, and the method comprises the steps: 1, taking 0.5-0.9 mmol of InCl3. 4H2O and 1-1.8 mmol of thioacetamide according to a molar ratio of 1: 2, adding the taken InCl3. 4H2O and thioacetamide into 70mL of ultrapure water, and stirring to obtain a solution B; step 2, adding 1.467-5.705 mg of carbon quantum dots into the solution B, and stirring to obtain a mixed solution C; and step 3, pouring the mixed solution C into a high-pressure kettle with a polytetrafluoroethylene lining, reacting at 160-179 DEG C for 8-10 hours, naturally cooling to room temperature, and sequentially washing and drying to obtain the carbon quantum dot / indium sulfide ohmic junction. The preparation method has the advantages of being simple in preparation process, low in cost and environmentally friendly, and the synthesized carbon quantum dot / indium sulfide ohmic junction has excellent photocatalytic performance and can effectively degrade oxytetracycline and sulfamethoxazole in wastewater.

The invention relates to the technical field of photo-thermal interface water evaporation hydrogen production, and discloses a preparation method and application of a hydrophilic composite gel material.The method comprises the steps that titanium carbide MXene serves as a substrate, cobaltosic oxide is loaded, indium zinc sulfide nanosheets grow in situ, and a ternary composite photo-thermal catalyst is prepared; mixing with a sodium alginate solution to prepare a precursor solution; after low-temperature freezing and forming, immersing into a calcium chloride solution in an unfrozen state for in-situ cross-linking; and finally, cleaning, freezing and thawing and carrying out solvent exchange drying to obtain a finished product. The invention further discloses application of the material and a recycling and regenerating method based on acidolysis and alkali washing. According to the invention, carrier recombination is inhibited by utilizing a heterojunction structure, a water transmission and hydrogen escape channel is optimized by virtue of a hydrophilic pore channel structure constructed by freezing crosslinking, the problems of powder agglomeration and recovery are solved, the photocatalytic hydrogen production efficiency and stability are effectively improved, and the full-life-cycle utilization value of the material is enhanced.

The invention discloses a hollow tubular indium zinc sulfide photocatalytic material as well as a preparation method and application thereof, and belongs to the field of photocatalysis. According to the preparation method, rod-shaped MIL-68 (In)-NH2 is taken as a template, a ZnIn2S4 sheet layer is grown on the MIL-68 (In)-NH2 in situ through a one-pot hydrothermal method, and under the hydrothermal condition, the MIL-68 (In)-NH2 structure is decomposed from the inside under the combined action of Zn < 2 + >, In < 3 + >, S < 2-> and water molecules, so that the hollow tubular ZnIn2S4 photocatalytic material is prepared. The hollow tubular structure can promote penetration and reflection of light, provide a large number of contactable reaction sites and accelerate diffusion of reactants and products. The photocatalytic material is used for photocatalytic oxygen reduction to generate H2O2 under visible light, has the advantages of simple preparation method and high visible light catalytic activity, and provides a green and sustainable way for generation of H2O2 through oxygen reduction.

The invention discloses a 4.5-inch indium phosphide single crystal growth temperature gradient control method, and belongs to the technical field of crystal preparation. A five-stage temperature control indium phosphide single crystal growth furnace is used for control, the control method comprises the steps that five electric heating areas are arranged on the five-stage temperature control indium phosphide single crystal growth furnace, the temperature setting ranges are 1030-1050 DEG C, 1040-1060 DEG C, 1060-1070 DEG C, 1070-1080 DEG C and 1080-1098 DEG C in sequence from bottom to top, and treatment is conducted according to the steps of room temperature, heating, heat preservation, cooling and room temperature. A quartz Dewar tube and a crucible are arranged in the furnace, and the raw materials are placed according to the sequence of seed crystal, red phosphorus, indium sulfide, indium phosphide polycrystal, boron oxide and indium phosphide polycrystal. The heating rate is 12-18 DEG C / h, the cooling rate is 25-30 DEG C / h, and nitrogen or argon is filled into the furnace before the reaction until the pressure reaches 2.5-3.0 atmospheric pressure. According to the method, the temperature control accuracy can be improved, the temperature field uniformity is enhanced, and the qualified rate of the indium phosphide single crystal is improved.