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Rare earth elements co-doped indium sulfide material as well as preparation method and application thereof

A technology of rare earth elements and co-doping, which is applied in the fields of chemical instruments and methods, chemical/physical processes, physical/chemical process catalysts, etc., can solve the problems that the crystallinity of indium sulfide is easy to change, the shape and size of indium sulfide are difficult to control, and the sol Gel method has long synthesis period and other problems, to achieve the effect of improving photocatalytic performance, high photogenerated charge separation efficiency, and easy control of reaction conditions

Active Publication Date: 2018-02-09
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The existing synthesis methods of indium sulfide mainly include precipitation method, sol-gel method, microemulsion method, hydrothermal method, etc. Among them, the precipitation method has the problem that the shape and size of indium sulfide are difficult to control, and the sol-gel method has a long synthesis period and Easy secondary pollution and other problems, the microemulsion method has problems such as difficulty in separating the target product and high operating costs
At present, although the use of rare earth metal doping in the synthesis process of indium sulfide can improve the light absorption performance of indium sulfide, rare earth metal doping still has a series of defects, such as the existence of indium sulfide crystallinity is easy to change, the utilization rate of near-infrared light Low, low photogenerated charge separation efficiency, etc.

Method used

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  • Rare earth elements co-doped indium sulfide material as well as preparation method and application thereof
  • Rare earth elements co-doped indium sulfide material as well as preparation method and application thereof
  • Rare earth elements co-doped indium sulfide material as well as preparation method and application thereof

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Embodiment 1

[0050] An indium sulfide material co-doped with rare earth elements is used to dope indium sulfide with rare earth elements Yb and Tm.

[0051] In this embodiment, the mass content of Yb in the indium sulfide material co-doped with rare earth elements is 7.3%, and the mass content of Tm is 0.71%.

[0052] In this embodiment, the indium sulfide material co-doped with rare earth elements is flower-shaped microspheres, which are self-assembled by interweaving two-dimensional nanosheets, and have a three-dimensional network-like petal structure, wherein the flower-shaped microspheres The diameter is 200nm ~ 2000nm.

[0053] In this embodiment, the indium sulfide material co-doped with rare earth elements contains sulfur holes.

[0054] In this embodiment, the indium sulfide material co-doped with rare earth elements has a forbidden band width of 1.78 eV, and can up-convert near-infrared light into light of 270 nm to 800 nm.

[0055] A method for preparing the indium sulfide mate...

Embodiment 2

[0059] A rare earth element co-doped indium sulfide material, which is basically the same as the rare earth element co-doped indium sulfide material in Example 1, the difference is: (1) The rare earth element co-doped indium sulfide in Example 2 The mass content of Yb in the material is 14.3%, and the mass content of Tm is 0.69%. (2) The band gap of the indium sulfide material co-doped with rare earth elements in Example 2 is 1.79 eV.

[0060] A preparation method of the indium sulfide material co-doped with rare earth elements in the above-mentioned present embodiment is basically the same as the preparation method of the indium sulfide material co-doped with rare earth elements in Example 1, the difference is: the method of Example 2 In step (1) In 3 + , Yb 3+ and Tm 3+ The molar ratio is 179:20:1.

[0061] The rare earth element co-doped indium sulfide material (being Yb 3+ and Tm 3+ Co-doped In 2 S 3 ), labeled YTIS-2.

Embodiment 3

[0063] A rare earth element co-doped indium sulfide material, which is basically the same as the rare earth element co-doped indium sulfide material in Example 1, the difference is: (1) The rare earth element co-doped indium sulfide in Example 3 The mass content of Yb in the material is 20.9%, and the mass content of Tm is 0.68%. (2) The band gap of the indium sulfide material co-doped with rare earth elements in Example 2 is 1.79 eV.

[0064] A preparation method of the indium sulfide material co-doped with rare earth elements in the above-mentioned present embodiment is basically the same as the preparation method of the indium sulfide material co-doped with rare earth elements in Example 1, the difference is: the method of Example 3 In step (1) In 3 + , Yb 3+ and Tm 3+ The molar ratio is 169:30:1.

[0065] The rare earth element co-doped indium sulfide material (being Yb 3+ and Tm 3+ Co-doped In 2 S 3 ), labeled YTIS-3.

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Abstract

The invention discloses a rare earth elements co-doped indium sulfide material as well as a preparation method and application thereof. The indium sulfide material is formed in a way that rare earth elements Yb and Tm are co-doped with indium sulfide. The preparation method comprises the following steps: dissolving an indium source, an ytterbium source, a thulium source and a sulfur source into water, so as to obtain mixed solution; performing a hydrothermal reaction on the obtained mixed solution; and performing washing and vacuum drying, so as to obtain the rare earth elements co-doped indium sulfide material. The rare earth elements co-doped indium sulfide material has the advantages of narrow energy gap, wide spectral response characteristic, and high photogenerated charge separation efficiency; and the preparation method has the advantages of being simple in process, strong in operability and low in production cost, being environment-friendly and pollution-free. When the rare earth elements co-doped indium sulfide material is used for treating heavy metal wastewater or dye wastewater, the indium sulfide material has the advantages of being short in reaction time in a treatmentprocess, high in utilization efficiency of solar energy, high in photocatalytic conversion efficiency, convenient in operation and the like, and therefore, the indium sulfide material can be widely applied to elimination of toxicity and harmless treatment for heavy metals and dyes in the wastewater and has great importance.

Description

technical field [0001] The invention belongs to the field of material preparation and energy environment protection, and relates to a rare earth element co-doped indium sulfide material and its preparation method and application, in particular to a Yb 3+ and Tm 3+ Co-doped In 2 S 3 And its preparation method and application. Background technique [0002] With the development of the economy, energy and environmental issues are becoming more and more prominent. Semiconductor photocatalysis technology is considered to be one of the most promising methods to solve environmental and energy problems because it can realize the conversion from solar energy to chemical energy. As we all know, 50% of solar energy can reach the earth's surface, and this part of solar energy contains about 5% of ultraviolet light, 46% of visible light and 49% of near-infrared light. However, for conventional semiconductor photocatalysts such as TiO 2 , ZnO, SnO 2 etc. can only be excited by ultrav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04C02F1/32C02F1/30C02F101/22C02F101/34C02F101/38
CPCC02F1/30C02F1/32B01J27/04C02F2101/22C02F2101/38C02F2101/34B01J35/39
Inventor 袁兴中吴志斌曾光明蒋龙波陈晓红张进熊婷王侯
Owner HUNAN UNIV
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