Preparation method of two-dimensional In2S3/SnS heterojunction crystal material

Abstract

The invention belongs to the field of nano semiconductor materials, and discloses a preparation method of a two-dimensional In2S3 / SnS heterojunction crystal material. The preparation method comprises the following steps: mixing indium sulfide, stannous sulfide and sodium chloride to obtain a precursor, putting the precursor in a central temperature region of a single-temperature-region reaction furnace, under the condition of introducing a carrier gas, heating the reaction furnace to a preset target temperature to carry out a reaction so as to bring gas-phase In2S3 and gas-phase SnS generated by heating evaporation of the precursor into a deposition region located at the downstream of the central temperature region by using the carrier gas, thereby forming the two-dimensional In2S3 / SnS heterojunction crystal material on a substrate located at the downstream deposition region through deposition. By improving the one-step reaction principle, key reaction conditions and parameters (such as raw material composition, reaction temperature conditions and the like) of the preparation method, compared with the prior art, the two-dimensional in-plane and / or vertical In2S3 / SnS heterojunction can be prepared by a one-step method, and the preparation method is simple in mechanism and convenient to regulate and control.

Description

technical field [0001] The invention belongs to the field of nano-semiconductor materials, and more specifically relates to a two-dimensional In 2 S 3 / SnS heterogeneous crystal material preparation method. Background technique [0002] Two-dimensional heterostructures have attracted considerable attention in recent years due to their unique electrical and optical properties, making them potential candidates for p-n diodes, photodetectors, transistors, sensors as well as light-emitting diodes (Nat.Commun.2015, 6,7311). The heterojunction formed by two-dimensional semiconductors has a wide range of excellent properties, such as tunable band gap (Nano Lett. 2014, 14, 3185), excitonic spectrum and work function (Science 2014, 344, 725). Since the graphene / boron nitride (BN) heterojunction was first reported, 2D transition metal dichalides (TMDs)-MX based 2 Lateral heterostructures of (M=Mo, W; X=S, Se) have attracted increasing attention and have been widely synthesized. ...

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Problems solved by technology

Vapor deposition can be divided into one-step method and two-step or multi-step method (specifically, undergoing multiple vapor deposition processes), but multi-step vapor deposition inevitably makes the synthesis process more complicated. The structural properties of the obtained product may also be destroyed in the second step reaction process

One-step vapor deposition synthesis of heterostructures has also been reported. The sequential formation of heterojunctions can be achieved by changing the composition of the reactive gas environment, but the complex gas environment will inevitably lead to more complex reaction processes.

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