Preparation method of indium sulfide/carbon nitride composite nano material

A technology of composite nanomaterials and carbon nitride, applied in the field of photocatalytic materials, can solve the problems of expensive, unsuitable for large-scale production, and low quantum efficiency.

Active Publication Date: 2014-08-20
江苏良基集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Indium Sulfide (In2S3) as a bandgap between 1.9-2.3 eV Semiconductor materials, which also have broad application prospects in the field of photocatalysis; recently, Sunita et al. (J. Phys. Chem. C, 2013, 117(11): 5558-5567.) through a citric acid-assisted surface functionalization method The composite material of ZnO/In2S3 was prepared. Due to the difference in the energy band gap between the two,

Method used

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  • Preparation method of indium sulfide/carbon nitride composite nano material
  • Preparation method of indium sulfide/carbon nitride composite nano material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Embodiment 1 class graphitic nitrogen carbide (g-C 3 N 4 ) preparation

[0021] g-C 3 N 4 The preparation adopts the method of thermal polymerization of urea; weigh 10 g of urea in a semi-closed crucible and place it at 80 o C in a drying oven for 48 h, then transfer the crucible to a temperature-programmed tube furnace; set the temperature-programmed tube furnace at 2.3 o The heating rate of C / min is heated to 550 o C and keep it warm for 4 h; after cooling down to room temperature naturally, take it out, grind it into powder with a mortar, and use a concentration of 0.01 mol·L -1 dilute HNO 3 Wash 3 times to remove residual alkaline species, then wash 3 times with deionized water and absolute ethanol respectively, and finally wash at 80 o C oven dried for 12 h.

Embodiment 2

[0022] Example 2 30% In 2 S 3 / g -C 3 N 4 Preparation of composite materials

[0023] In 2 S 3 / g -C 3 N 4 Composite materials were prepared using the traditional hydrothermal method: weigh 0.2 g g-C 3 N 4 The powder was dissolved in 150 mL of pure water, then ultrasonicated for 0.5 h in an ultrasonic machine with a power of 250 W, and then In(NO 3 ) 3 4.5H 2 O 0.1406 g, stirred for 0.5 h, after completely dissolved, added dropwise to C 2 h 5 NS (0.05 mol L -1 ) solution 14.72 ml, and stirred for 0.5 h, then transferred to a 50 mL polytetrafluoroethylene-lined reactor, placed in an oven, at 160 ο C for 8 h, take it out and cool it down to room temperature naturally, wash the obtained sample 3 times with deionized water, wash 3 times with absolute ethanol, and place in a vacuum oven for 60 ο C was vacuum dried for 12 h to obtain 30% In 2 S 3 / g -C 3 N 4 composite material.

Embodiment 3

[0024] Example 3 40% In 2 S 3 / g -C 3 N 4 Preparation of composite materials

[0025] In 2 S 3 / g -C 3 N 4 Composite materials were prepared using the traditional hydrothermal method: weigh 0.2 g g-C 3 N 4 The powder was dissolved in 150 mL of pure water, then ultrasonicated for 0.5 h in an ultrasonic machine with a power of 250 W, and then In(NO 3 ) 3 4.5H 2 O 0.1875 g, stirred for 0.5 h, after completely dissolved, added dropwise to C 2 h 5 NS (0.05 mol L -1 ) solution 19.63 ml, stirred for another 0.5 h, then transferred to a 50 mL polytetrafluoroethylene-lined reactor, placed in an oven, at 120 ο C for 12 h, take it out and cool it to room temperature naturally, wash the obtained sample with deionized water for 3 times, wash with absolute ethanol for 3 times, and place in a vacuum oven for 60 ο C was vacuum dried for 12 h to obtain 40% In 2 S 3 / g -C 3 N 4 composite material.

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Abstract

The invention relates to a photocatalytic material, and particularly relates to a preparation method of an indium sulfide/carbon nitride composite nano material. The preparation method of the indium sulfide/carbon nitride composite nano material comprises the following steps: weighing g-C3N3 powder, dissolving into purified water, carrying out ultrasonic dispersion uniformly, then adding In(NO3)3.4.5H2O, carrying out magnetic stirring until dissolving completely, dropwise adding the prepared C2H5NS solution, carrying out magnetic stirring, transferring into a reaction kettle with an inner liner made of Teflon, putting into a baking oven, and carrying out hydrothermal reaction; and cleaning and drying to obtain the indium sulfide/carbon nitride composite nano material. The method protects the environment, is efficient, simple, convenient and feasible, and the prepared In2S3/g-C3N4 composite material has a favorable application prospect in the fields of photocatalysis and the like.

Description

technical field [0001] The invention relates to a photocatalytic material, in particular to a method for preparing an indium sulfide / carbon nitride composite material. The preparation process is simple, the cost is low, and the product has good photocatalytic activity. technical background [0002] The development of new environmental pollution treatment methods is a hot spot in environmental science research. In recent years, semiconductor photocatalysis technology has been widely studied in the fields of environment, materials and energy; among many semiconductor catalysts, graphite-like carbon nitride ( g-C 3 N 4 ) is the most stable allotrope in carbon nitride. It has the characteristics of layered structure, non-toxicity, and cheap raw materials. It has good application prospects in biology, catalysis, and energy storage; in recent years, the use of g-C 3 N 4 Research reports on the photocatalytic decomposition of materials to eliminate various organic pollutants i...

Claims

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Application Information

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IPC IPC(8): B01J27/24B82Y40/00
Inventor 陈敏姜德立孟素慈贺敏强吴柱东
Owner 江苏良基集团有限公司
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