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Two-dimensional non-layered In2SnS4 crystal material and preparation method thereof

A crystal material, non-layered technology, applied in the field of two-dimensional non-layered In2SnS4 crystal material and its preparation, can solve the problems of crystal structure and electronic structure change, difficult to peel off, small product size, etc., to reduce the degree of freedom of reaction , reduce energy consumption, and optimize temperature

Active Publication Date: 2020-02-28
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among the wet chemical synthesis methods, two-dimensional template synthesis has been widely used to grow anisotropic nanocrystals, but the product size is small and the properties are changed due to the liquid environment
The chemical exfoliation method can produce several grams of submicron-sized substances, but the crystal structure and electronic structure of the obtained products have changed, and the non-layered materials are difficult to exfoliate because the three-dimensional directions are all connected by chemical bonds.

Method used

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  • Two-dimensional non-layered In2SnS4 crystal material and preparation method thereof
  • Two-dimensional non-layered In2SnS4 crystal material and preparation method thereof
  • Two-dimensional non-layered In2SnS4 crystal material and preparation method thereof

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Effect test

Embodiment 1

[0032] A horizontal tube furnace with a single temperature zone is used as the reaction device. The tube length of the horizontal tube furnace is 90cm, the outer diameter is 25mm, the tube wall thickness is 2mm, the range of the constant temperature zone is 10cm, the temperature in the central temperature zone is 820°C, and the temperature in the downstream deposition zone The temperature is 600°C, and the heating rate is 30°C / min. Using In 2 S 3 and SnS powder (purity>99.99%) as In, Sn and S sources, while adding NaCl to obtain the precursor, and at the same time place the molecular sieve above the precursor and place it in the central temperature zone; use fluorphlogopite as the substrate and place it downstream 16cm away from the central temperature zone. Before the reaction, pre-evacuate to about 10Pa, then fill it with 600 sccm of Ar to atmospheric pressure, and repeatedly wash the gas to eliminate residual oxygen; during the reaction process, 50 sccm of Ar is introduce...

Embodiment 2

[0034] A horizontal tube furnace with a single temperature zone is used as the reaction device. The tube length of the horizontal tube furnace is 90cm, the outer diameter is 25mm, the tube wall thickness is 2mm, the range of the constant temperature zone is 10cm, the temperature in the central temperature zone is 820°C, and the temperature in the downstream deposition zone The temperature is 600°C, and the heating rate is 30°C / min. Using In 2 S 3 and SnS powder (purity>99.99%) as In, Sn and S sources, while adding NaCl to obtain the precursor, and at the same time place the molecular sieve above the precursor and place it in the central temperature zone; use fluorphlogopite as the substrate and place it downstream 16cm away from the central temperature zone. Before the reaction, pre-evacuate to about 10Pa, then fill with 600 sccm of Ar to atmospheric pressure, and repeatedly wash the gas to eliminate residual oxygen; during the reaction, 100 sccm of Ar is introduced as a car...

Embodiment 3

[0036] A horizontal tube furnace with a single temperature zone is used as the reaction device. The tube length of the horizontal tube furnace is 90cm, the outer diameter is 25mm, the tube wall thickness is 2mm, the range of the constant temperature zone is 10cm, the temperature in the central temperature zone is 800°C, and the temperature in the downstream deposition zone The temperature is 600°C, and the heating rate is 30°C / min. Using In 2 S 3 and SnS powder (purity>99.99%) as In, Sn and S sources, while adding NaCl to obtain the precursor, and at the same time place the molecular sieve above the precursor and place it in the central temperature zone; use fluorphlogopite as the substrate and place it downstream 16cm away from the central temperature zone. Before the reaction, pre-evacuate to about 10Pa, then fill it with 600 sccm of Ar to atmospheric pressure, and repeatedly wash the gas to eliminate residual oxygen; during the reaction process, 50 sccm of Ar is introduce...

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Abstract

The invention belongs to the field of nanosized semiconductor materials, and particularly discloses a two-dimensional non-layered In2SnS4 crystal material and a preparation method thereof. The preparation method specifically comprises the following steps: mixing indium sulfide, stannous sulfide and sodium chloride to obtain a precursor; placing the precursor in a central temperature zone, heatingthe precursor to generate an In2SnS4 crystal material, and bringing the In2SnS4 crystal material into a downstream deposition zone by using carrier gas so as to perform deposition on the substrate inthe downstream deposition zone, thereby forming the two-dimensional non-layered In2SnS4 crystal material. According to the invention, indium sulfide, stannous sulfide and sodium chloride are mixed toserve as a precursor, so the temperature of a central temperature area can be reduced, energy consumption in the preparation process is reduced, and controllability of the preparation process is achieved; meanwhile, a substrate is arranged in the downstream deposition area and keeps a certain distance away from the central temperature area, so the situation that the substrate is damaged due to thetoo high temperature of the central temperature area can be avoided.

Description

technical field [0001] The invention belongs to the field of nano-semiconductor materials, and more specifically relates to a two-dimensional non-layered In 2 SnS 4 Crystalline materials and methods for their preparation. Background technique [0002] Since Geim and Novoselov successfully prepared graphene by mechanical exfoliation for the first time in 2004, two-dimensional materials have attracted widespread attention as a new type of functional material (Science 2004, 306, 666-669). Although graphene has ultra-high electron mobility and good ductility, its zero-bandgap characteristics limit its application in optoelectronic and electronic devices (Nature 2012, 490, 192-200), and for this field , the ideal material is a two-dimensional semiconductor. So far, in addition to graphene, a large number of graphene-like ultrathin two-dimensional nanomaterials have been prepared by various methods (ACS Nano 2012,6,74-78), but the current research is mainly based on layered str...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B25/00C30B29/64
CPCC30B25/00C30B29/46C30B29/64
Inventor 周兴左念翟天佑
Owner HUAZHONG UNIV OF SCI & TECH
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