Two-dimensional non-layered In2SnS4 crystal material and preparation method thereof

Abstract

The invention belongs to the field of nanosized semiconductor materials, and particularly discloses a two-dimensional non-layered In2SnS4 crystal material and a preparation method thereof. The preparation method specifically comprises the following steps: mixing indium sulfide, stannous sulfide and sodium chloride to obtain a precursor; placing the precursor in a central temperature zone, heatingthe precursor to generate an In2SnS4 crystal material, and bringing the In2SnS4 crystal material into a downstream deposition zone by using carrier gas so as to perform deposition on the substrate inthe downstream deposition zone, thereby forming the two-dimensional non-layered In2SnS4 crystal material. According to the invention, indium sulfide, stannous sulfide and sodium chloride are mixed toserve as a precursor, so the temperature of a central temperature area can be reduced, energy consumption in the preparation process is reduced, and controllability of the preparation process is achieved; meanwhile, a substrate is arranged in the downstream deposition area and keeps a certain distance away from the central temperature area, so the situation that the substrate is damaged due to thetoo high temperature of the central temperature area can be avoided.

Description

technical field [0001] The invention belongs to the field of nano-semiconductor materials, and more specifically relates to a two-dimensional non-layered In 2 SnS 4 Crystalline materials and methods for their preparation. Background technique [0002] Since Geim and Novoselov successfully prepared graphene by mechanical exfoliation for the first time in 2004, two-dimensional materials have attracted widespread attention as a new type of functional material (Science 2004, 306, 666-669). Although graphene has ultra-high electron mobility and good ductility, its zero-bandgap characteristics limit its application in optoelectronic and electronic devices (Nature 2012, 490, 192-200), and for this field , the ideal material is a two-dimensional semiconductor. So far, in addition to graphene, a large number of graphene-like ultrathin two-dimensional nanomaterials have been prepared by various methods (ACS Nano 2012,6,74-78), but the current research is mainly based on layered str...

AI Technical Summary

Problems solved by technology

Among the wet chemical synthesis methods, two-dimensional template synthesis has been widely used to grow anisotropic nanocrystals, but the product size is small and the properties are changed due to the liquid environment

The chemical exfoliation method can produce several grams of submicron-sized substances, but the crystal structure and electronic structure of the obtained products have changed, and the non-layered materials are difficult to exfoliate because the three-dimensional directions are all connected by chemical bonds.

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