The invention discloses a two-dimensional Bi2MoO6 single-
crystal gate dielectric material, a preparation method and application of the two-dimensional Bi2MoO6 single-
crystal gate dielectric material in a
field effect transistor, the two-dimensional Bi2MoO6 single-
crystal gate dielectric material is in an ultrathin
nanosheet shape, the thickness is 7.5-70 nm, the
crystal structure is an orthorhombic
system, [MoO4] 2-
layers and [Bi2O2] 2 +
layers are alternately arranged along a c axis, a Pca21
space group is adopted, lattice constants a = b = 5.53, c = 16.30, Bi2O3, MoO3 and BiOCl are used as precursors, fluorophlogopite is used as a substrate, and the two-dimensional Bi2MoO6 single-crystal gate
dielectric material is prepared through a hydrothermal method. The material is prepared through a BiOCl-assisted
chemical vapor deposition method, and has the advantages of high crystal quality, high
dielectric constant,
wide band gap and excellent high-temperature stability and air stability. According to the
field effect transistor, by constructing the Bi2MoO6 / MoS2 Van der Waals
heterojunction, the problems that an existing
field effect transistor has many gate
dielectric interface defects, large
hysteresis and high-temperature performance degradation are solved, the switching ratio which is still larger than 104 at the high temperature of 500 K is obtained, the
hysteresis voltage is smaller than 10 mV, and the
field effect transistor is suitable for a next-generation low-power-consumption and high-temperature-resistant electronic device.