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62 results about "Fluorphlogopite" patented technology

Method for separating rare-earth resource from rear-earth slag by virtue of supergravity

ActiveCN103451442ASolve the problem of environmental loadAchieving targeted enrichmentProcess efficiency improvementSlagCerium
The invention discloses a method for separating a rare-earth resource from rear-earth slag by virtue of supergravity, and the method comprises the following steps: step 1, cooling molten rare-earth slag within a temperature range of 1150-1300 DEG C at a cooling speed smaller than 2 DEG C / min to obtain thermally treated rare-earth slag; step 2, treating the thermally treated rare-earth slag by means of centrifugal gravitational separation. By virtue of centrifugal gravitational separation, a rare earth ore concentrate of which the cefluosil grade is 80%-93% can be obtained, and the recovery rate of rare earth in the rare-earth slag is as high as 85%-90%. In tailings, the main phase is calcium fluoride and barium fluorophlogopite containing rare earth, which can be used for replacing partial fluorite for recycling calcium fluoride, and meanwhile the tailings can be directly used as a raw material for extracting Sc2O3 and Eu2O3 by virtue of a wet method. The method disclosed by the invention has the advantages of realizing directional concentration of small and dispersed cefluosil in the rare-earth slag by virtue of supergravity, increasing the yield and quality of a product Ce2O3, and meanwhile recycling the fluorite, Sc2O3 and the Eu2O3 from the tailings. The method disclosed by the invention can be used for not only solving the environmental load problems caused by the rare-earth slag but also realizing comprehensive utilization of the rare-earth slag resources.
Owner:UNIV OF SCI & TECH BEIJING

Flexible substrate-based semiconductor epitaxial structure, VCSEL and manufacturing method

ActiveCN110739604ATaking into account the temperature requirementsEnhanced interactionLaser detailsSemiconductor laser structural detailsDevice materialEngineering
The invention relates to a flexible substrate-based semiconductor epitaxial structure, a VCSEL and a manufacturing method. According to the flexible substrate-based semiconductor epitaxial structure,the VCSEL and the manufacturing method, fluorophlogopite is adopted as a substrate, and therefore, the problem that an existing semiconductor substrate cannot be bent and is not easy to peel off is solved, and the temperature requirement of a semiconductor device is set. According to buffer layers, a plurality of first GaInP buffer layers are gradually changed layer by layer, presenting a step gradient trend; a second GaInP buffer layer is inserted between two adjacent first GaInP buffer layers of which the In components change in a gradient manner, the direction of the In component gradient change of the second GaInP buffer layer being opposite to the direction of the In component gradient change of the first GaInP buffer layers, and therefore, an In component fluctuating and gradually-changing structure can be formed, and compressive stress is introduced into the buffer layers; the interaction of dislocation is increased, so that the surface of the structure is smoother; penetrationdislocation is reduced; the quality of an epitaxial layer on the fluorophlogopite substrate is improved; and the application of the fluorophlogopite substrate to the semiconductor device is realized.The VCSEL has the advantages of bendability, easiness in stripping, good epitaxial layer quality, high light emitting efficiency and the like.
Owner:XIAMEN QIANZHAO SEMICON TECH CO LTD

Preparation method of fluorphlogopite mica, and application of fluorphlogopite mica in preparation of two-dimensional crystals

The invention provides a preparation method of fluorphlogopite mica, and an application of the fluorphlogopite mica in the preparation of two-dimensional crystals. The preparation method of fluorphlogopite mica comprises the following steps: mixing magnesite, montmorillonite and quartz sands, and crushing the obtained mixture by a high-speed mechanical shock mill to form a millimeter-scale fine sand grain mixture; adding a nitric acid solution to the fine sand grain mixture, and carrying out a reaction to obtain a suspension; adding sodium fluoride and potassium chloride to the suspension, performing stirring and reacting, adjusting the pH value of the obtained solution to 7 by using a sodium hydroxide solution, performing centrifuging to obtain a precipitate, calcining the precipitate, and gradually cooling the obtained material to obtain crude fluorphlogopite mica; and stripping the crude fluorphlogopite mica by using supercritical carbon dioxide to obtain slices which are the prepared fluorphlogopite mica. The prepared fluorphlogopite mica has the advantages of low impurity content, good stability and high smoothness; the two-dimensional crystals prepared from the fluorphlogopite mica have a high mobility reaching 1800 cm<2> V<-1>s<-1>; and the photoelectric responsibility at 550 nm reaches up to 2000 AW<-1>.
Owner:长春市泰元氟金云母有限公司

Preparation method of tantalum-doped large-area two-dimensional niobium disulfide material

The invention discloses a preparation method of a tantalum-doped large-area two-dimensional niobium disulfide material, belongs to the technical field of preparation of two-dimensional materials, and is used for solving the problems that thin-layer samples required to be used in most researches are prepared by adopting a mechanical stripping method, and the method is time-consuming, labor-consuming, incapable of realizing batch preparation, difficult to accurately control thickness and size and the like. According to the preparation method of the tantalum-doped large-area two-dimensional niobium disulfide material provided by the invention, the transition metal oxide and the powdered sulfur are taken as source substances, the fluxing salt ammonium chloride is introduced, the fluorophlogopite and a silicon wafer are taken as a growth substrate, and the tantalum-doped large-area two-dimensional niobium disulfide material is prepared through rapid growth under the nitrogen-hydrogen mixed carrier gas, the prepared two-dimensional material has larger size, the maximum size of niobium disulfide can reach 115 micrometers, the size of tantalum-doped niobium disulfide can reach 112 micrometers, and compared with a traditional method for preparing the two-dimensional material through mechanical stripping, the method has the advantages of being high in deposition rate, controllable in crystal structure and surface morphology, good in repeatability and the like.
Owner:ANHUI UNIVERSITY

Upper cover thermal runaway protection mica structural member for new energy automobile and preparation method of upper cover thermal runaway protection mica structural member

The invention relates to the technical field of new energy thermal runaway protection materials, in particular to an upper cover thermal runaway protection mica structural part for a new energy automobile and a preparation method of the upper cover thermal runaway protection mica structural part. An upper cover thermal runaway protection mica structural part for a new energy automobile comprises a porous mica ceramic part, and a low-heat-conduction tear-resistant mica sheet is compounded on the surface, facing the inner wall of an automobile front upper cover, of the porous mica ceramic part. The thickness ratio of the porous mica ceramic piece to the low-heat-conduction tear-resistant mica sheet is (2-4): 1; the porous mica ceramic part is mainly prepared from the following raw materials in parts by weight: 60-70 parts of surface modified fluorophlogopite and 30-40 parts of a binder, the surface modified fluorophlogopite comprises a fluorophlogopite body and metal particles, and the metal particles are fixedly connected to the surface of the fluorophlogopite body through a coating process. The interface bonding force between the thermal runaway protective agent and foam glue is high, the degumming phenomenon is not prone to occurring, and therefore the overall thermal runaway protective performance durability, safety and stability of the new energy automobile are improved.
Owner:浙江荣泰电工器材股份有限公司

Modified mica titanium pearlescent pigment and preparation thereof, transparent thermal insulation coating and glass

The invention discloses a modified mica titanium pearlescent pigment and preparation thereof, a transparent thermal insulation coating and glass. The modified mica titanium pearlescent pigment comprises a tin-doped mica titanium pearlescent pigment and rubidium cesium double-ion doped tungsten bronze, and in the tin-doped mica titanium pearlescent pigment, the doping amount of tin is 0.5-1.8 wt%, the content of titanium dioxide is 8-40 wt%, and the balance is fluorophlogopite sheets. The chemical formula of the rubidium cesium double-ion doped tungsten bronze is RbxCsyWO3, x is more than 0 and less than or equal to 0.33, y is more than 0 and less than or equal to 0.33, and the rubidium cesium double-ion doped tungsten bronze coats the outer surface of the tin-doped mica titanium pearlescent pigment. The 940nm and 1400nm infrared ray blocking rates of the modified mica titanium pearlescent pigment are greatly improved, and when the modified mica titanium pearlescent pigment is applied to the transparent thermal insulation coating, the solar total transmittance of the transparent heat insulation coating can be remarkably reduced, and the full infrared blocking rate and the 940nm and 1400nm infrared ray blocking rates are remarkably improved.
Owner:张伟

Preparation method of large-size two-dimensional bismuth iodide single crystal

The invention discloses a preparation method of a large-size two-dimensional bismuth iodide single crystal. The method comprises the following steps: S1, putting bismuth iodide powder into a corundum boat with an opening at one end, and then inversely buckling a fluorophlogopite substrate on the corundum boat; s3, introducing argon and hydrogen into the tubular furnace, and making the gasified bismuth iodide diluted and subjected to a reduction reaction; s4, after the reaction is finished, making the gas phase trap moved to a heating belt at the tail end of the tube furnace for cooling, and in the cooling process, making gas in the corundum boat deposited on the fluorophlogopite substrate to form attachment; and S5, after the gas phase trap is completely cooled, obtaining the two-dimensional bismuth iodide single crystal. The preparation method of the large-size two-dimensional bismuth iodide single crystal solves the problems that the bismuth iodide single crystal prepared by the existing method is small in size and uncontrollable in thickness, the whole preparation process is simple, the operation is convenient, and the repeatability is good; and two-dimensional single crystal bismuth iodide with different thicknesses and sizes can be obtained by controlling the cooling rate.
Owner:化学与精细化工广东省实验室潮州分中心

Green fluorophlogopite fluorescent powder with high quantum yield as well as preparation method and application of green fluorophlogopite fluorescent powder

The invention relates to the technical field of fluorescent materials, and particularly discloses green fluorophlogopite fluorescent powder with high quantum yield as well as a preparation method and application of the green fluorophlogopite fluorescent powder. The preparation method of the green fluorophlogopite fluorescent powder comprises the following steps: uniformly mixing potassium fluosilicate, magnesium oxide, aluminum oxide, silicon dioxide, terbium oxide and cerium oxide, and grinding to obtain mixed solid powder; and calcining the mixed solid powder at 1030-1070 DEG C for 4.5-5 hours in an inert atmosphere, cooling, and grinding to obtain the green fluorophlogopite fluorescent powder with high quantum yield. The fluorophlogopite fluorescent powder prepared by the preparation method can clearly show I-level-III-level fingerprint characteristics under the excitation of ultraviolet light, the purpose of displaying latent fingerprints on the surfaces of various base materials is achieved, the fluorescence quantum yield is as high as 78%, the developing effect is obvious, and the fluorophlogopite fluorescent powder has a relatively high application prospect in the fields of forensic medicine, individual identity recognition and the like.
Owner:HEBEI NORMAL UNIV
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