The invention relates to the technical field of micro-nano electronic devices, in particular to a preparation method of an HZO-CNT
thin film transistor based on a dry-method
electrode transfer process, which adopts a method of growing an
electrode through a sacrificial substrate and transferring the
electrode through a dry method, and comprises the following steps of: firstly, depositing
TiN on a
silicon-based substrate on which 300nm
silicon dioxide grows to serve as a gate electrode, and further forming an HZO
gate dielectric layer by adopting an ALD (
Atomic Layer Deposition) technology; immersing the device subjected to HZO deposition into a
carbon nanotube dispersion liquid to form a uniform CNT film; in addition, a fluorophlogopite substrate is used as a sacrificial substrate, evaporated Au is used as a source and drain electrode, then a dry method is used for transferring an electrode, specifically, PDMS is used for stripping a
metal electrode / PMMA / PDMS /
glass sheet from the fluorophlogopite sheet, then the
metal electrode / PMMA / PDMS /
glass sheet and a device deposited with a CNT film are subjected to electrode fitting, and finally preparation is completed. According to the invention, the contact interface between the electrode of the device and the
gate dielectric is effectively improved, and ideal sub-threshold swing,
high current switch ratio and low
contact resistance and off-state current are obtained.