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Tin sulfide/tin disulfide heterojunction material and preparation method thereof

A technology of tin disulfide and tin sulfide, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the pollution of heterojunction surface interface, heterogeneous interface is prone to defects, and the quality of heterogeneous crystals is low and other problems, to achieve the effect of simple preparation process, high repeatability and high uniformity

Active Publication Date: 2021-08-20
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the mechanical exfoliation transfer method is to first combine SnS and SnS 2 It is peeled off from the single crystal sample, and then stacked to form a heterojunction by wet or dry transfer. lower
The hydrothermal synthesis method is based on the solution-based self-assembly, template-assisted growth and heat treatment process, which is suitable for the preparation of large quantities of nanomaterials, but the size of the obtained heterojunction materials is small and the morphology and structure are difficult to control; in addition, the external Attachment of impurities etc. between the interfaces will seriously degrade the performance and stability of the heterojunction
Step-by-step chemical vapor deposition (CVD) is based on the CVD method that grows SnS and SnS step-by-step 2 materials; in the growth process, the first material is usually used as the substrate, and other materials are epitaxially grown on its side or vertical direction; this method is conducive to the preparation of large-area heterojunctions, but the growth process is difficult to control. It is easy to cause the appearance of single crystals and mixed crystals; at the same time, the heterogeneous interface prepared by the step-by-step CVD method is prone to defects, resulting in low quality heterogeneous crystals

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  • Tin sulfide/tin disulfide heterojunction material and preparation method thereof
  • Tin sulfide/tin disulfide heterojunction material and preparation method thereof
  • Tin sulfide/tin disulfide heterojunction material and preparation method thereof

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preparation example Construction

[0026] A one-dimensional tin sulfide / two-dimensional tin disulfide heterojunction and a preparation method thereof, comprising the following steps:

[0027] Step 1: Wipe the three-temperature zone CVD tube furnace clean with absolute ethanol, and anneal at a high temperature of 600°C for 10 minutes, and flush with 500 sccm of high-purity argon during the annealing;

[0028] Step 2: Weigh 150mg of sulfur powder (S) and 50mg of tin sulfide powder (SnS) respectively into the quartz boat; place the quartz boat with S powder in the first temperature zone of the three-temperature zone CVD tube furnace, load The quartz boat with SnS powder is placed in the second temperature zone; at the same time, the freshly peeled fluorophlogopite substrate is placed in the downstream direction of the SnS powder, with a distance of 6cm;

[0029] Step 3: Pump the CVD tube furnace, first turn on the mechanical pump to reduce the pressure in the furnace to 5Pa, then turn on the molecular pump to pump...

Embodiment 1

[0034]Wipe the three-temperature-zone CVD tube furnace clean with absolute ethanol, and anneal at 600°C for 10 minutes, and flush with 500 sccm of high-purity argon during annealing; weigh 150 mg of S powder and 50 mg of SnS powder respectively, and place them in a quartz boat; Place the quartz boat with S powder in the first temperature zone of the three-zone CVD tube furnace, place the quartz boat with SnS powder in the second temperature zone, and put the freshly peeled fluorophlogopite substrate into In the CVD tube furnace, it is located 6cm downstream of the SnS powder; after checking the airtightness of the CVD tube furnace, pump the CVD tube furnace, first turn on the mechanical pump to reduce the air pressure to 5 Pa, and then turn on the molecular pump to pump to below 2 Pa; then use 500sccm high-purity argon to quickly inflate the CVD tube furnace to standard atmospheric pressure; raise the temperature of the S powder temperature zone and the SnS temperature zone at ...

Embodiment 2

[0037] Wipe the three-temperature-zone CVD tube furnace clean with absolute ethanol, and anneal at 600°C for 10 minutes, and flush with 500 sccm of high-purity argon during annealing; weigh 150 mg of S powder and 50 mg of SnS powder respectively, and place them in a quartz boat; Place the quartz boat with S powder in the first temperature zone of the three-zone CVD tube furnace, place the quartz boat with SnS powder in the second temperature zone, and put the freshly peeled fluorophlogopite substrate into In the CVD tube furnace, it is located 6cm downstream of the SnS powder; after checking the airtightness of the CVD tube furnace, pump the CVD tube furnace, first turn on the mechanical pump to reduce the air pressure to 5 Pa, and then turn on the molecular pump to pump to below 2 Pa; then use 500sccm high-purity argon to quickly inflate the CVD tube furnace to standard atmospheric pressure; raise the temperature of the S powder temperature zone and the SnS temperature zone at...

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Abstract

The invention discloses a tin sulfide / tin disulfide heterojunction material and a preparation method thereof. Sulfur powder is used as a sulfur source, tin sulfide powder is used as a tin source, and under a standard atmospheric pressure condition, a one-step chemical vapor deposition method is adopted to obtain a one-dimensional tin sulfide / two-dimensional tin disulfide mixed dimensional heterojunction material with high crystallinity and uniform distribution on a fluorophlogopite sheet. The preparation method is easy and convenient to operate and good in repeatability, and optimal growth parameters in the high-quality mixed-dimension heterojunction are obtained by simply adjusting the temperature of a sulfur powder temperature zone and the temperature of a tin sulfide temperature zone; and the one-dimensional tin sulfide / two-dimensional tin disulfide mixed dimensional heterojunction prepared by the method has unique photoelectric characteristics, and has potential application value in the fields of nano-electronics and optoelectronic devices.

Description

technical field [0001] The invention belongs to the field of low-dimensional semiconductor heterojunction materials, and specifically relates to a mixed-dimensional heterojunction material formed by quasi-one-dimensional (1D) tin sulfide and two-dimensional (2D) tin disulfide and a preparation method thereof. Background technique [0002] Sn-based chalcogenide materials have shown great potential for novel electronic and optoelectronic device applications due to their excellent optoelectronic properties such as earth-abundant content, high light absorption coefficient, and tunable bandgap. Among these tin-based chalcogenide materials, tin sulfide (SnS) and tin disulfide (SnS 2 ) are layered van der Waals materials, making them capable of obtaining two-dimensional thin-layer structures by mechanical exfoliation or vapor phase epitaxy methods. Among them, SnS is a narrow bandgap semiconductor (bandgap value is about 1.1 eV), and the synthesized nanostructure usually exhibits ...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/44B82Y40/00
CPCC23C16/305C23C16/44B82Y40/00
Inventor 舒海波程烨城黄杰梁培刘雪吟刘诗彤
Owner CHINA JILIANG UNIV
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