8 results about "Bismuth iodide" patented technology

This invention relates to the field of photoelectrocatalytic organic synthesis technology, specifically to a composite photoelectrode for photoelectrocatalytic preparation of ketone compounds from polyols, its preparation method, and its application. The method includes: dropping a dimethyl sulfoxide solution of vanadium acetylacetonate onto an FTO conductive glass plated with bismuth iodide, wherein the ratio of the amount of vanadium acetylacetonate to the deposition area of ​​bismuth iodide is 10-15 mmol:1 cm². 2 The bismuth oxy iodide deposition on the FTO conductive glass was carried out until the dimethyl sulfoxide solution of vanadium acetylacetonate completely covered the bismuth oxy iodide deposition, followed by calcination to obtain a BiVO4 photoanode. An ethanol solution of [2-(9H-carbazole-9-yl)ethyl]phosphonic acid was spin-coated onto the BiVO4 photoanode and dried to obtain a 2PACz / BiVO4 photoanode. A second constant-potential electrodeposition was performed, followed by washing to obtain the composite photoelectrode. The calcination conditions included a calcination temperature of 600-800℃, a calcination time of 2-4 h, and a heating rate of 8-12℃ / min. This composite photoelectrode can photocatalyze the conversion of polyols into ketone compounds.

A light harvesting supercapacitor includes a first transparent substrate, a first active layer including copper bismuth iodide (Cu3Bi2I9) nanoparticles on the first transparent substrate. The light harvesting supercapacitor further includes an electrolyte layer including a gel electrolyte disposed on the first active layer, a second active layer including Cu3Bi2I9 nanoparticles on the electrolyte layer, and a second transparent substrate on the second active layer. The gel electrolyte includes polyvinylpyrrolidone (PVP), an organic solvent, and an ion-forming substance.

This invention relates to a method for preparing a uniformly distributed bismuth nanoparticle / carbon nanorod composite material (Bi / CNRs) and its application as a negative electrode material for low-temperature fast-charging sodium-ion batteries. The preparation steps of this composite material are as follows: a) preparing bismuth iodide nanosheets (BiOI NSs); b) dispersing BiOI NSs and trimesic acid in a mixed solution of N,N-dimethylformamide and methanol, followed by hydrothermal reaction to obtain metal-organic framework materials (Bi-MOFs); c) thermally shocking the Bi-MOFs in an Ar atmosphere to obtain the Bi / CNRs composite material. As a negative electrode material for sodium-ion batteries, Bi / CNRs exhibits outstanding low-temperature electrochemical performance, reaching -40℃ and 5Ag. ‑1 The capacity at current density is 261 mAh g. ‑1 ;1A g ‑1 The capacity after 2400 cycles is 240mAh g. ‑1 This invention provides a new approach for developing low-temperature sodium-ion battery anode materials with excellent overall performance.

The application discloses an inorganic-organic bismuth iodine hybrid semiconductor and a preparation method and application thereof, the hybrid semiconductor has a molecular formula of (Me2biz)BiI4, wherein (Me2biz) + is a methylated benzimidazole cation with a positive charge, (BiI4) ‑ in the material is a one-dimensional anion chain formed by coordination of trivalent bismuth ions and iodine ions, and a single crystal of the compound (Me2biz)BiI4 is obtained by selecting bismuth iodide, benzimidazole, methanol, acetone and hydroiodic acid as reaction raw materials and solvents and under a solvothermal reaction condition, and the single crystal has good stability and photocatalytic CO2 reduction catalytic activity.

This invention relates to a 2D / 3D heterojunction layer, its fabrication method, and a large-area direct-type perovskite wafer X-ray detector, belonging to the field of perovskite radiation detection technology. A 2D / 3D heterojunction is constructed by combining bismuth iodide (BiI3) with perovskite. BiI3 serves as the heterolayer on the perovskite light-absorbing layer, and is then used in a large-area direct-type perovskite wafer X-ray detector. Under dynamic pressure, the two-dimensional planes of BiI3 gradually become perpendicular to the direction of the applied force, resulting in a uniform orientation, i.e., a single-crystal orientation. This leads to electrical anisotropy in the layer, providing a barrier to ion migration. Simultaneously, the formation of a heterostructure that matches energy levels facilitates charge separation and collection, thereby improving X-ray detection performance.

This invention discloses an ultra-low thermal conductivity all-inorganic perovskite cesium bismuth iodide aerogel, its preparation method, and its applications, relating to the field of aerogel technology. The method involves dissolving cesium iodide and bismuth triiodide in a mixed solvent of oleic acid, oleylamine, and octadecene to obtain a cesium bismuth iodide mixed solution; maintaining the cesium bismuth iodide mixed solution at 120-260℃ for 1-48 hours, followed by sequential filtration and purification to obtain a cesium bismuth iodide colloid; aging the cesium bismuth iodide colloid and then drying it to form an ultra-low thermal conductivity all-inorganic perovskite cesium bismuth iodide aerogel. This invention improves the application performance of aerogels in medium- and low-temperature insulation fields by utilizing the ultra-low intrinsic thermal conductivity of the all-inorganic perovskite cesium bismuth iodide, along with its low-temperature thermal stability.

The application discloses a preparation method of a complex-phase CsBr / Cs3Bi2Br3I6 array film and application thereof, and relates to the technical field of semiconductors.The specific process of the application is as follows: CsBr microspheres are deposited on the surface of interdigital electrodes by a simple gas phase evaporation method of cesium bromide, bismuth iodide is used as a reaction raw material, N,N-dimethylformamide is used as a solvent, and a Cs3Bi2Br3I6 array film is in-situ reaction-grown on the CsBr microspheres by multiple spraying and heat treatment, the film is uniform and porous, Cs3Bi2Br3I6 sheet-shaped nanocrystals are vertically grown on the surface and gaps of the CsBr microspheres, the diameter of the CsBr microspheres is 1-3 microns, the thickness of the Cs3Bi2Br3I6 nanosheet is 50-100 nanometers, the film is firmly combined with a base material, and the prepared complex-phase CsBr / Cs3Bi2Br3I6 array film shows room-temperature sensitive performance to hydrogen sulfide gas.Compared with the prior art, the application has the advantages of reasonable preparation process design, high uniformity of large-area film formation, strong operability, high sensitivity to H2S gas at room temperature, and good long-term stability.

The invention discloses a method for synthesizing a lead-free perovskite thin film in air, which is characterized in that the whole preparation process is completed under an ambient air condition without inert atmosphere protection; the preparation method comprises the following steps: dissolving cesium iodide and bismuth triiodide in a ternary mixed solvent to prepare a cesium bismuth iodide precursor solution; the indium tin oxide substrate is ultrasonically cleaned in an alkaline detergent, deionized water and at least two polar organic solvents in sequence; filtering the precursor solution through a filter membrane, and depositing a cesium bismuth iodide wet membrane on the surface of a pretreated cesium iodide substrate by adopting a two-step spin-coating method; and carrying out annealing treatment on the obtained wet film in air at 80-100 DEG C to form the CsBi3I10 film. By systematically optimizing a DMF: DMSO: ACN ternary solvent system, collaborative regulation and control of CsBi3I10 film crystallization kinetics and morphology are realized in ambient air, the excellent solubility of DMF, the strong coordination crystallization delaying effect of DMSO and the rapid volatilization film-forming promoting characteristic of ACN are fully exerted through the ratio, and a compact and pinhole-free high-quality film with the nearly ideal stoichiometric ratio is formed.