16 results about "Bismuth iodide" patented technology

The present disclosure provides an X-ray sensing device. The X-ray sensing device includes a substrate, a first metal electrode, a second metal electrode, an X-ray photoelectric conversion layer, a third metal electrode, and an insulating layer. The first metal electrode and the second metal electrode are on the substrate and separated from each other. The X-ray photoelectric conversion layer extends continuously on the substrate and directly contacts the first metal electrode and the second metal electrode. The X-ray photoelectric conversion layer includes silicon, amorphous selenium, germanium, cadmium zinc telluride, bismuth iodide, lead oxide, Cs2TeI6 perovskite, CsPbBr3 perovskite, bismuth-based halide perovskite, 6,13-bis(triisopropylsilylethynyl)pentacene, poly(9,9-dioctylfluorene), polydimethylsilane, or combinations thereof. The third metal electrode and the insulating layer are on the substrate, and the third metal electrode is separated from the first metal electrode, the second metal electrode, and the X-ray photoelectric conversion layer by the insulating layer.

This invention relates to the field of photoelectrocatalytic organic synthesis technology, specifically to a composite photoelectrode for photoelectrocatalytic preparation of ketone compounds from polyols, its preparation method, and its application. The method includes: dropping a dimethyl sulfoxide solution of vanadium acetylacetonate onto an FTO conductive glass plated with bismuth iodide, wherein the ratio of the amount of vanadium acetylacetonate to the deposition area of ​​bismuth iodide is 10-15 mmol:1 cm². 2 The bismuth oxy iodide deposition on the FTO conductive glass was carried out until the dimethyl sulfoxide solution of vanadium acetylacetonate completely covered the bismuth oxy iodide deposition, followed by calcination to obtain a BiVO4 photoanode. An ethanol solution of [2-(9H-carbazole-9-yl)ethyl]phosphonic acid was spin-coated onto the BiVO4 photoanode and dried to obtain a 2PACz / BiVO4 photoanode. A second constant-potential electrodeposition was performed, followed by washing to obtain the composite photoelectrode. The calcination conditions included a calcination temperature of 600-800℃, a calcination time of 2-4 h, and a heating rate of 8-12℃ / min. This composite photoelectrode can photocatalyze the conversion of polyols into ketone compounds.

A light harvesting supercapacitor includes a first transparent substrate, a first active layer including copper bismuth iodide (Cu3Bi2I9) nanoparticles on the first transparent substrate. The light harvesting supercapacitor further includes an electrolyte layer including a gel electrolyte disposed on the first active layer, a second active layer including Cu3Bi2I9 nanoparticles on the electrolyte layer, and a second transparent substrate on the second active layer. The gel electrolyte includes polyvinylpyrrolidone (PVP), an organic solvent, and an ion-forming substance.

The invention provides a preparation method of a bismuth oxyiodide-cobalt sulfide in-situ heterojunction electrocatalytic carbon dioxide reduction catalyst, and belongs to the field of carbon dioxide electrocatalytic reduction. Urea and cobalt chloride hexahydrate are used as raw materials, a bismuth oxyiodide nanosheet is formed on a cobalt sulfide hollow nanotube through a two-step hydrothermal method in combination with a reaction of halide and bismuth nitrate, and the in-situ heterojunction electrode which has good selectivity on methanol and is used for electrocatalytic reduction of carbon dioxide is prepared. According to the method, a one-dimensional hollow nanotube structure is prepared by adopting a two-step thermal solvent method, and then bismuth oxyiodide nanosheets grow on the one-dimensional hollow nanotube structure in situ. The method is easy and convenient to operate, meanwhile, a compact heterojunction interface can be formed between the bismuth oxyiodide hollow nanotube and the cobalt sulfide hollow nanotube through in-situ growth, transfer of electrons of the composite material is promoted, the hollow nanotube structure is also beneficial to gas adsorption of the catalyst, and therefore the electro-catalytic performance is greatly improved. The preparation method provides a new thought and method for improving the selectivity and stability of electrocatalytic carbon dioxide reduction.

This invention relates to a method for preparing a uniformly distributed bismuth nanoparticle / carbon nanorod composite material (Bi / CNRs) and its application as a negative electrode material for low-temperature fast-charging sodium-ion batteries. The preparation steps of this composite material are as follows: a) preparing bismuth iodide nanosheets (BiOI NSs); b) dispersing BiOI NSs and trimesic acid in a mixed solution of N,N-dimethylformamide and methanol, followed by hydrothermal reaction to obtain metal-organic framework materials (Bi-MOFs); c) thermally shocking the Bi-MOFs in an Ar atmosphere to obtain the Bi / CNRs composite material. As a negative electrode material for sodium-ion batteries, Bi / CNRs exhibits outstanding low-temperature electrochemical performance, reaching -40℃ and 5Ag. ‑1 The capacity at current density is 261 mAh g. ‑1 ;1A g ‑1 The capacity after 2400 cycles is 240mAh g. ‑1 This invention provides a new approach for developing low-temperature sodium-ion battery anode materials with excellent overall performance.

The application discloses an inorganic-organic bismuth iodine hybrid semiconductor and a preparation method and application thereof, the hybrid semiconductor has a molecular formula of (Me2biz)BiI4, wherein (Me2biz) + is a methylated benzimidazole cation with a positive charge, (BiI4) ‑ in the material is a one-dimensional anion chain formed by coordination of trivalent bismuth ions and iodine ions, and a single crystal of the compound (Me2biz)BiI4 is obtained by selecting bismuth iodide, benzimidazole, methanol, acetone and hydroiodic acid as reaction raw materials and solvents and under a solvothermal reaction condition, and the single crystal has good stability and photocatalytic CO2 reduction catalytic activity.

This invention relates to a 2D / 3D heterojunction layer, its fabrication method, and a large-area direct-type perovskite wafer X-ray detector, belonging to the field of perovskite radiation detection technology. A 2D / 3D heterojunction is constructed by combining bismuth iodide (BiI3) with perovskite. BiI3 serves as the heterolayer on the perovskite light-absorbing layer, and is then used in a large-area direct-type perovskite wafer X-ray detector. Under dynamic pressure, the two-dimensional planes of BiI3 gradually become perpendicular to the direction of the applied force, resulting in a uniform orientation, i.e., a single-crystal orientation. This leads to electrical anisotropy in the layer, providing a barrier to ion migration. Simultaneously, the formation of a heterostructure that matches energy levels facilitates charge separation and collection, thereby improving X-ray detection performance.

The invention discloses a preparation method and application of a bismuth iodide complex formula novel cold cloud catalyst, the bismuth iodide complex formula novel cold cloud catalyst comprises bismuth iodide, silver iodide and an adhesive, the mass ratio of bismuth iodide to silver iodide is 1: (1-10), and the ratio of the total mass of bismuth iodide and silver iodide to the mass of the adhesive is 1: (1-10). The bismuth iodide powder with high purity and small particle size is beneficial to dispersion during sublimation, is environment-friendly, has a low melting point, is easy to heat and sublimate, can provide iodide ions in a cloud layer to compensate iodine lost by sublimation of silver iodide, and meets the actual requirement of environmental protection at the same time. The bismuth iodide can be fully combusted and sublimated to form aerosol with high bismuth iodide content, so that the catalytic efficiency of the catalyst is improved.

The invention discloses a high-sensitivity neutron detector based on a heavy atomic number element doped perovskite single crystal and a preparation method thereof.The preparation method comprises the steps that methyl ammonium bromide and lead bromide are dissolved in N, N-dimethylformamide, bismuth iodide is added and stirred to obtain a precursor solution, the precursor solution is divided into two parts, the first part is taken to be heated for the first time, and the second part is taken to be heated for the second time; and then adding the second part to perform second heating to obtain the perovskite single crystal doped with the heavy atomic number element, vacuumizing, drying and polishing to obtain the perovskite single crystal layer doped with the heavy atomic number element. The single crystal layer is combined with a neutron conversion layer, an electron transmission layer and a hole transmission layer are introduced, a novel neutron detector is constructed, the neutron detector has the advantages of being high in integration level, low in cost, portable, easy to process, high in response efficiency and the like, and a new solution is expected to be provided besides a traditional detector.

This invention discloses an ultra-low thermal conductivity all-inorganic perovskite cesium bismuth iodide aerogel, its preparation method, and its applications, relating to the field of aerogel technology. The method involves dissolving cesium iodide and bismuth triiodide in a mixed solvent of oleic acid, oleylamine, and octadecene to obtain a cesium bismuth iodide mixed solution; maintaining the cesium bismuth iodide mixed solution at 120-260℃ for 1-48 hours, followed by sequential filtration and purification to obtain a cesium bismuth iodide colloid; aging the cesium bismuth iodide colloid and then drying it to form an ultra-low thermal conductivity all-inorganic perovskite cesium bismuth iodide aerogel. This invention improves the application performance of aerogels in medium- and low-temperature insulation fields by utilizing the ultra-low intrinsic thermal conductivity of the all-inorganic perovskite cesium bismuth iodide, along with its low-temperature thermal stability.

The invention relates to a photoelectric detector based on aluminum-doped copper-indium-sulfur quantum dots and a preparation method thereof, and belongs to the technical field of quantum dot material optical communication, and the preparation method comprises the following steps: (1) depositing bismuth oxyiodide (BiOI) nanosheets on clean conductive glass through an electro-deposition method, after the bismuth oxyiodide (BiOI) nanosheets are cleaned and dried, dropwise adding a vanadium source, and carrying out high-temperature calcination and cleaning to obtain a bismuth vanadate film; (2) synthesizing a high-quality copper-indium-sulfur quantum dot by adopting a co-heating method, and doping an aluminum element after nucleation is finished, so as to obtain the aluminum-doped copper-indium-sulfur quantum dot with excellent photoelectric property; and (3) vertically immersing the porous bismuth vanadate into the purified quantum dot / toluene solvent, depositing quantum dots into the bismuth vanadate by using an electrophoretic deposition method, washing redundant quantum dots on the surface by using toluene, and drying to obtain the quantum dot sensitized bismuth vanadate film photoelectrochemical photoelectric detector. The beneficial effects of the invention are that the response speed of the PEC-type photoelectric detector is improved by improving the photoelectric performance of the aluminum-doped copper indium sulfur quantum dots.

The application discloses a preparation method of a complex-phase CsBr / Cs3Bi2Br3I6 array film and application thereof, and relates to the technical field of semiconductors.The specific process of the application is as follows: CsBr microspheres are deposited on the surface of interdigital electrodes by a simple gas phase evaporation method of cesium bromide, bismuth iodide is used as a reaction raw material, N,N-dimethylformamide is used as a solvent, and a Cs3Bi2Br3I6 array film is in-situ reaction-grown on the CsBr microspheres by multiple spraying and heat treatment, the film is uniform and porous, Cs3Bi2Br3I6 sheet-shaped nanocrystals are vertically grown on the surface and gaps of the CsBr microspheres, the diameter of the CsBr microspheres is 1-3 microns, the thickness of the Cs3Bi2Br3I6 nanosheet is 50-100 nanometers, the film is firmly combined with a base material, and the prepared complex-phase CsBr / Cs3Bi2Br3I6 array film shows room-temperature sensitive performance to hydrogen sulfide gas.Compared with the prior art, the application has the advantages of reasonable preparation process design, high uniformity of large-area film formation, strong operability, high sensitivity to H2S gas at room temperature, and good long-term stability.

The present invention discloses a nonlinear optical crystal bismuth iodide selenite, a preparation method thereof and an application thereof. The nonlinear optical crystal bismuth iodide selenite has a chemical formula of BiSeIO6, is an orthorhombic crystal system, has a space group of Pna2(1), and has unit cell parameters of a=7.115 Å, b=11.335 Å, c=6.717 Å, and V=541.67 Å. 3 A bismuth source, an iodine source, and a selenium source are mixed in a molar ratio of bismuth to iodine to selenium of 1-1.2:1-1.2:1-1.2, and subjected to a hydrothermal reaction at 150-250°C for at least 24 hours to obtain a nonlinear optical crystal, bismuth iodide selenite. The nonlinear optical crystal bismuth iodide selenite of this invention is used in laser frequency conversion devices. It exhibits a strong frequency-doubled effect. Under 1064nm pulsed laser pumping, the powder frequency-doubled intensity generated is six times that of potassium dihydrogen phosphate (KDP) under the same conditions. It also achieves type I phase matching, facilitating the debugging of laser devices and efficient laser frequency conversion applications.

The invention discloses a method for synthesizing a lead-free perovskite thin film in air, which is characterized in that the whole preparation process is completed under an ambient air condition without inert atmosphere protection; the preparation method comprises the following steps: dissolving cesium iodide and bismuth triiodide in a ternary mixed solvent to prepare a cesium bismuth iodide precursor solution; the indium tin oxide substrate is ultrasonically cleaned in an alkaline detergent, deionized water and at least two polar organic solvents in sequence; filtering the precursor solution through a filter membrane, and depositing a cesium bismuth iodide wet membrane on the surface of a pretreated cesium iodide substrate by adopting a two-step spin-coating method; and carrying out annealing treatment on the obtained wet film in air at 80-100 DEG C to form the CsBi3I10 film. By systematically optimizing a DMF: DMSO: ACN ternary solvent system, collaborative regulation and control of CsBi3I10 film crystallization kinetics and morphology are realized in ambient air, the excellent solubility of DMF, the strong coordination crystallization delaying effect of DMSO and the rapid volatilization film-forming promoting characteristic of ACN are fully exerted through the ratio, and a compact and pinhole-free high-quality film with the nearly ideal stoichiometric ratio is formed.

The invention belongs to the technical field of extraction, and specifically relates to a method for preparing cesium iodide from rubidium-cesium enriched material. The method comprises the following steps: S1: high-temperature roasting; S2: dissolving the roasting residue in deionized water and filtering to obtain solution A and filter residue; S3: adding acid to solution A to adjust the pH of solution A to acidic, and at the same time, adding iodide ions to obtain yellow solution B; S4: weighing bismuth oxide and dissolving it in hydrochloric acid to obtain solution C; S5: adding the yellow solution B to solution C to obtain a red solid precipitate D containing cesium and a rubidium-containing solution E; S6: solid-liquid separation; and S7: thermal decomposition treatment. The invention uses bismuth ions and iodide ions as precipitants, adds bismuth ions and iodide ions to a solution containing rubidium-cesium potassium, and reacts to generate precipitated cesium iodide bismuthate, thereby achieving almost selective recovery of cesium in the rubidium-cesium potassium solution. In addition, cesium iodide with a purity greater than 99% can be directly obtained by thermal decomposition of the cesium iodide bismuthate, and the bismuth iodide can be recovered to further prepare the precipitant.

The present disclosure provides X-ray sensing panels, X-ray sensing elements, methods of using the same, and methods of forming semiconductor structures including the same. The X-ray sensing element includes a substrate, first and second metal electrodes on the substrate, an X-ray photoelectric conversion layer continuously extending on the substrate and contacting the first and second metal electrodes, and a third metal electrode and an insulating layer on the substrate. The first and second metal electrodes are spaced apart. The X-ray photoelectric conversion layer includes silicon, amorphous selenium, germanium, cadmium zinc telluride, bismuth iodide, lead oxide, Cs2TeI6 perovskite, CsPbBr3 perovskite, bismuth-based halide perovskite, 6, 13-bis (triisopropylsilylethynyl) pentacene, poly (9, 9-dioctylfluorene), polydimethylsiloxane, or a combination thereof. The third metal electrode is separated from the first and second metal electrodes and the X-ray photoelectric conversion layer by an insulating layer. The X-ray photoelectric conversion layer directly absorbs X-rays and generates light current. The X-ray sensing element has multiple structural patterns, is highly compatible with most processes, and has high signal-to-noise and high photosensitive power.