25 results about "Bismuth iodide" patented technology

The present disclosure provides an X-ray sensing device. The X-ray sensing device includes a substrate, a first metal electrode, a second metal electrode, an X-ray photoelectric conversion layer, a third metal electrode, and an insulating layer. The first metal electrode and the second metal electrode are on the substrate and separated from each other. The X-ray photoelectric conversion layer extends continuously on the substrate and directly contacts the first metal electrode and the second metal electrode. The X-ray photoelectric conversion layer includes silicon, amorphous selenium, germanium, cadmium zinc telluride, bismuth iodide, lead oxide, Cs2TeI6 perovskite, CsPbBr3 perovskite, bismuth-based halide perovskite, 6,13-bis(triisopropylsilylethynyl)pentacene, poly(9,9-dioctylfluorene), polydimethylsilane, or combinations thereof. The third metal electrode and the insulating layer are on the substrate, and the third metal electrode is separated from the first metal electrode, the second metal electrode, and the X-ray photoelectric conversion layer by the insulating layer.

This invention relates to the field of photoelectrocatalytic organic synthesis technology, specifically to a composite photoelectrode for photoelectrocatalytic preparation of ketone compounds from polyols, its preparation method, and its application. The method includes: dropping a dimethyl sulfoxide solution of vanadium acetylacetonate onto an FTO conductive glass plated with bismuth iodide, wherein the ratio of the amount of vanadium acetylacetonate to the deposition area of ​​bismuth iodide is 10-15 mmol:1 cm². 2 The bismuth oxy iodide deposition on the FTO conductive glass was carried out until the dimethyl sulfoxide solution of vanadium acetylacetonate completely covered the bismuth oxy iodide deposition, followed by calcination to obtain a BiVO4 photoanode. An ethanol solution of [2-(9H-carbazole-9-yl)ethyl]phosphonic acid was spin-coated onto the BiVO4 photoanode and dried to obtain a 2PACz / BiVO4 photoanode. A second constant-potential electrodeposition was performed, followed by washing to obtain the composite photoelectrode. The calcination conditions included a calcination temperature of 600-800℃, a calcination time of 2-4 h, and a heating rate of 8-12℃ / min. This composite photoelectrode can photocatalyze the conversion of polyols into ketone compounds.

A method of producing bismuth oxyhalide quantum dots without heat. The method is a one-pot method that includes synthesizing bismuth oxyhalide quantum dots at room temperature. The method results in quantum dots preferably having bismuth and halide in a molar ratio of 1:1. Further, the bismuth oxyhalide quantum dots produced demonstrate excellent photocatalytic activity in the visible light spectrum and possess improved surface characteristics.

The invention discloses a bismuth-based perovskite photosynapse transistor and a preparation method thereof, and the bismuth-based perovskite photosynapse transistor is of a layered structure, and sequentially comprises a silicon dioxide / silicon substrate layer, a bismuth-based perovskite light absorption layer doped with stannous iodide, a semiconductor channel layer, and a source / drain electrode layer from bottom to top. The source / drain electrode layer comprises a source electrode and a drain electrode which are respectively arranged on two sides of the upper surface of the semiconductor channel layer; in the preparation process, bivalent tin ions of stannous iodide with relatively strong Lewis acidity compete with trivalent bismuth ions of cesium iodide in a precursor, so that rapid reaction of cesium iodide and bismuth iodide is prevented, the crystallization speed of the bismuth-based perovskite film is slowed down, and unstable tin-iodine bonds can be broken through annealing treatment after combination, so that the performance of the bismuth-based perovskite film is improved. Therefore, the crystallization quality of the bismuth-based perovskite film is regulated and controlled; part of bivalent tin ions in the bismuth-based perovskite light absorption layer are easily oxidized by a DMSO solvent in annealing treatment to form tetravalent tin ions to generate tin vacancies, and the tin vacancies of the bismuth-based perovskite light absorption layer are used for increasing the number of photogenerated charges captured by the bismuth-based perovskite photosynapse transistor. According to the invention, the film forming quality and the carrier lifetime of the bismuth-based perovskite can be improved, so that the conductivity variation range of the device is expanded.

The invention belongs to the technical field of biomedical nano-drugs, and discloses a radionuclide-labeled nano combined therapeutic agent with radiosensitization and a preparation method and application thereof, the bismuth oxyiodide nano combined therapeutic agent comprises a nano-particle carrier and radionuclides distributed in crystal lattices of the nano-particle carrier; the nano-particle carrier is bismuth oxyiodide of which the surface is coated with polyvinylpyrrolidone with negative charges; and the radionuclide adopts nuclide with a short half-life period. According to the invention, short-half-life nuclide is efficiently loaded through the bismuth oxyiodide BiOI nano-carrier, and a novel efficient and low-toxicity radiopharmaceutical strategy is provided for tumor treatment by combining radiation sensibilization and external irradiation synergism.

A light harvesting supercapacitor includes a first transparent substrate, a first active layer including copper bismuth iodide (Cu3Bi2I9) nanoparticles on the first transparent substrate. The light harvesting supercapacitor further includes an electrolyte layer including a gel electrolyte disposed on the first active layer, a second active layer including Cu3Bi2I9 nanoparticles on the electrolyte layer, and a second transparent substrate on the second active layer. The gel electrolyte includes polyvinylpyrrolidone (PVP), an organic solvent, and an ion-forming substance.

The invention provides a preparation method of a bismuth oxyiodide-cobalt sulfide in-situ heterojunction electrocatalytic carbon dioxide reduction catalyst, and belongs to the field of carbon dioxide electrocatalytic reduction. Urea and cobalt chloride hexahydrate are used as raw materials, a bismuth oxyiodide nanosheet is formed on a cobalt sulfide hollow nanotube through a two-step hydrothermal method in combination with a reaction of halide and bismuth nitrate, and the in-situ heterojunction electrode which has good selectivity on methanol and is used for electrocatalytic reduction of carbon dioxide is prepared. According to the method, a one-dimensional hollow nanotube structure is prepared by adopting a two-step thermal solvent method, and then bismuth oxyiodide nanosheets grow on the one-dimensional hollow nanotube structure in situ. The method is easy and convenient to operate, meanwhile, a compact heterojunction interface can be formed between the bismuth oxyiodide hollow nanotube and the cobalt sulfide hollow nanotube through in-situ growth, transfer of electrons of the composite material is promoted, the hollow nanotube structure is also beneficial to gas adsorption of the catalyst, and therefore the electro-catalytic performance is greatly improved. The preparation method provides a new thought and method for improving the selectivity and stability of electrocatalytic carbon dioxide reduction.

This invention relates to a method for preparing a uniformly distributed bismuth nanoparticle / carbon nanorod composite material (Bi / CNRs) and its application as a negative electrode material for low-temperature fast-charging sodium-ion batteries. The preparation steps of this composite material are as follows: a) preparing bismuth iodide nanosheets (BiOI NSs); b) dispersing BiOI NSs and trimesic acid in a mixed solution of N,N-dimethylformamide and methanol, followed by hydrothermal reaction to obtain metal-organic framework materials (Bi-MOFs); c) thermally shocking the Bi-MOFs in an Ar atmosphere to obtain the Bi / CNRs composite material. As a negative electrode material for sodium-ion batteries, Bi / CNRs exhibits outstanding low-temperature electrochemical performance, reaching -40℃ and 5Ag. ‑1 The capacity at current density is 261 mAh g. ‑1 ;1A g ‑1 The capacity after 2400 cycles is 240mAh g. ‑1 This invention provides a new approach for developing low-temperature sodium-ion battery anode materials with excellent overall performance.

The invention belongs to the technical field of material chemistry, and discloses a preparation method of bismuth-doped silver sulfide quantum dots and a photoelectronic device. The preparation method comprises the following steps: (1) dissolving silver iodide into a short-chain organic amine solution to form a solution A; (2) dissolving N, N-diphenylthiourea and bismuth iodide into N, N-dimethylformamide to form a solution B; and (3) under the condition of normal temperature, dropwise adding the solution A into the solution B, and stirring to prepare the bismuth-doped silver sulfide quantum dot. The bismuth-doped silver sulfide colloidal quantum dots can be prepared under the condition of normal temperature; the preparation method is simple in operation and convenient in product post-treatment, the obtained product can be directly used for film formation, and an environment-friendly optoelectronic device based on the silver sulfide colloid quantum dots can be conveniently constructed.

The invention relates to a 2D / 3D heterojunction layer, a preparation method and a large-area direct perovskite wafer X-ray detector, and belongs to the technical field of perovskite radiation detection. Bismuth iodide (BiI3) and perovskite are combined to construct a 2D / 3D heterojunction, and BiI3 serves as a heterogeneous layer to be located on a perovskite light absorption layer and is further used in a large-area direct type perovskite wafer X-ray detector. After the BiI3 is driven by dynamic pressure, the two-dimensional surface of the BiI3 is gradually perpendicular to the stress direction, so that the orientation of the BiI3 tends to be consistent, namely the orientation of a single crystal, the anisotropy of the layer in the aspect of electricity is caused, and a potential barrier for hindering ion migration is provided. Meanwhile, after the heterostructure meeting energy level matching is formed, separation and collection of charges are facilitated, and therefore the X-ray detection performance is improved.

The application discloses an inorganic-organic bismuth iodine hybrid semiconductor and a preparation method and application thereof, the hybrid semiconductor has a molecular formula of (Me2biz)BiI4, wherein (Me2biz) + is a methylated benzimidazole cation with a positive charge, (BiI4) ‑ in the material is a one-dimensional anion chain formed by coordination of trivalent bismuth ions and iodine ions, and a single crystal of the compound (Me2biz)BiI4 is obtained by selecting bismuth iodide, benzimidazole, methanol, acetone and hydroiodic acid as reaction raw materials and solvents and under a solvothermal reaction condition, and the single crystal has good stability and photocatalytic CO2 reduction catalytic activity.

This invention relates to a 2D / 3D heterojunction layer, its fabrication method, and a large-area direct-type perovskite wafer X-ray detector, belonging to the field of perovskite radiation detection technology. A 2D / 3D heterojunction is constructed by combining bismuth iodide (BiI3) with perovskite. BiI3 serves as the heterolayer on the perovskite light-absorbing layer, and is then used in a large-area direct-type perovskite wafer X-ray detector. Under dynamic pressure, the two-dimensional planes of BiI3 gradually become perpendicular to the direction of the applied force, resulting in a uniform orientation, i.e., a single-crystal orientation. This leads to electrical anisotropy in the layer, providing a barrier to ion migration. Simultaneously, the formation of a heterostructure that matches energy levels facilitates charge separation and collection, thereby improving X-ray detection performance.

This invention relates to a characteristic identification method for Fritillaria cirrhosa in Xiaor Qingfei granules. The Xiaor Qingfei granules are dissolved in water, then loaded onto the sample using a wet or dry method, and separated and enriched by normal-phase silica gel column chromatography. Gradient column chromatography is then performed sequentially using three mixtures of different polarities: dichloromethane:methanol (5:1), dichloromethane:methanol (2:1), and dichloromethane:methanol (1:1) as mobile phases. The fractions are collected in elution order and combined and concentrated to form fractions A and B. Thin-layer chromatography (TLC) analysis is performed on fractions A, B, and the Fritillaria cirrhosa extract for comparison. The developed TLC plate is then developed with potassium bismuth iodide as a colorimetric reagent; fractions A and B both show colorimetric spots corresponding to the Fritillaria cirrhosa extract. This method uses the identifying components in Fritillaria cirrhosa as a reference standard and combines column chromatography with a modified TLC method to characteristically identify Fritillaria cirrhosa in Xiaor Qingfei granules.

The invention discloses a preparation method and application of a bismuth iodide complex formula novel cold cloud catalyst, the bismuth iodide complex formula novel cold cloud catalyst comprises bismuth iodide, silver iodide and an adhesive, the mass ratio of bismuth iodide to silver iodide is 1: (1-10), and the ratio of the total mass of bismuth iodide and silver iodide to the mass of the adhesive is 1: (1-10). The bismuth iodide powder with high purity and small particle size is beneficial to dispersion during sublimation, is environment-friendly, has a low melting point, is easy to heat and sublimate, can provide iodide ions in a cloud layer to compensate iodine lost by sublimation of silver iodide, and meets the actual requirement of environmental protection at the same time. The bismuth iodide can be fully combusted and sublimated to form aerosol with high bismuth iodide content, so that the catalytic efficiency of the catalyst is improved.

A bismuth iodide oxide / zinc oxide composite material, a preparation method therefor and an application thereof in piezoelectric photocatalytic removal of organic pollutants. The conductive substrate spin-coated with a zinc oxide seed solution is annealed and added to the precursor solution for reaction to obtain a zinc oxide nanorod array (ZnO NRs); the zinc oxide nanorod array is added into a bismuth iodide precursor solution for reaction to obtain the bismuth iodide oxide / zinc oxide composite material (BiOI / ZnO NAs). The composite material is put into an aqueous solution containing bisphenol A, adsorption is performed in the dark for half an hour, and then ultrasound and visible light are used together to remove organic pollutants in the water. After piezoelectric photocatalytic degradation of 90 minutes, bisphenol A in the aqueous solution is almost completely degraded.

The invention discloses a high-sensitivity neutron detector based on a heavy atomic number element doped perovskite single crystal and a preparation method thereof.The preparation method comprises the steps that methyl ammonium bromide and lead bromide are dissolved in N, N-dimethylformamide, bismuth iodide is added and stirred to obtain a precursor solution, the precursor solution is divided into two parts, the first part is taken to be heated for the first time, and the second part is taken to be heated for the second time; and then adding the second part to perform second heating to obtain the perovskite single crystal doped with the heavy atomic number element, vacuumizing, drying and polishing to obtain the perovskite single crystal layer doped with the heavy atomic number element. The single crystal layer is combined with a neutron conversion layer, an electron transmission layer and a hole transmission layer are introduced, a novel neutron detector is constructed, the neutron detector has the advantages of being high in integration level, low in cost, portable, easy to process, high in response efficiency and the like, and a new solution is expected to be provided besides a traditional detector.

This invention discloses an ultra-low thermal conductivity all-inorganic perovskite cesium bismuth iodide aerogel, its preparation method, and its applications, relating to the field of aerogel technology. The method involves dissolving cesium iodide and bismuth triiodide in a mixed solvent of oleic acid, oleylamine, and octadecene to obtain a cesium bismuth iodide mixed solution; maintaining the cesium bismuth iodide mixed solution at 120-260℃ for 1-48 hours, followed by sequential filtration and purification to obtain a cesium bismuth iodide colloid; aging the cesium bismuth iodide colloid and then drying it to form an ultra-low thermal conductivity all-inorganic perovskite cesium bismuth iodide aerogel. This invention improves the application performance of aerogels in medium- and low-temperature insulation fields by utilizing the ultra-low intrinsic thermal conductivity of the all-inorganic perovskite cesium bismuth iodide, along with its low-temperature thermal stability.

The invention discloses a method for degrading antibiotics by using a near-infrared responsive bismuth-rich bismuth oxide / bismuth-rich iodine oxide Z-type photocatalyst. The near-infrared responsive bismuth-rich bismuth oxide / bismuth-rich iodine oxide Z-type photocatalyst is used to degrade the antibiotics. The transfer path of the photogenerated electron-hole of the Z-type photocatalyst conforms to the Z-type mechanism, which can not only broaden the light response range and promote the improvement of the migration efficiency of the photogenerated carriers, but also protect and utilize the redox ability with more negative conduction band potentials and more positive valence band potentials. The method has the advantages of wide light response range, high photogenerated electron-hole separation efficiency, high photocatalytic activity, strong redox ability, good stability, corrosion resistance, etc. When used for degrading antibiotics, the method can realize efficient degradation of various antibiotic pollutants. The method has the advantages of simple process, convenient operation, low treatment cost, high treatment efficiency, good degradation effect, etc., and is of great significance for effectively purifying antibiotic pollution in water environment.

The invention relates to a photoelectric detector based on aluminum-doped copper-indium-sulfur quantum dots and a preparation method thereof, and belongs to the technical field of quantum dot material optical communication, and the preparation method comprises the following steps: (1) depositing bismuth oxyiodide (BiOI) nanosheets on clean conductive glass through an electro-deposition method, after the bismuth oxyiodide (BiOI) nanosheets are cleaned and dried, dropwise adding a vanadium source, and carrying out high-temperature calcination and cleaning to obtain a bismuth vanadate film; (2) synthesizing a high-quality copper-indium-sulfur quantum dot by adopting a co-heating method, and doping an aluminum element after nucleation is finished, so as to obtain the aluminum-doped copper-indium-sulfur quantum dot with excellent photoelectric property; and (3) vertically immersing the porous bismuth vanadate into the purified quantum dot / toluene solvent, depositing quantum dots into the bismuth vanadate by using an electrophoretic deposition method, washing redundant quantum dots on the surface by using toluene, and drying to obtain the quantum dot sensitized bismuth vanadate film photoelectrochemical photoelectric detector. The beneficial effects of the invention are that the response speed of the PEC-type photoelectric detector is improved by improving the photoelectric performance of the aluminum-doped copper indium sulfur quantum dots.

The invention relates to a preparation method and application of a Cs3Bi2I9 nanocrystalline polymethyl methacrylate composite material, and belongs to the field of new materials. In order to solve the problems that an existing composite material is complex in preparation process and poor in performance, cesium iodide, bismuth iodide, dimethylformamide, oleic acid and oleylamine are mixed according to a specific proportion to prepare a precursor solution, the precursor solution is treated with isopropyl alcohol to obtain Cs3Bi2I9 nanocrystals, and the nanocrystals are mixed with polymethyl methacrylate powder and an organic solvent to prepare the composite material. The composite material can be used for preparing a resistive layer of an artificial nociceptor, the thickness of the resistive layer is 50-300nm, a bottom electrode is made of a transparent conductive glass material, and a top electrode is made of silver, aluminum or gold. The preparation method is simple and efficient, the obtained composite material is stable in performance, the efficient and sensitive damage sensing function can be achieved when the composite material is applied to an artificial nociceptor, and the composite material has wide application prospects and remarkable beneficial effects.

The application discloses a preparation method of a complex-phase CsBr / Cs3Bi2Br3I6 array film and application thereof, and relates to the technical field of semiconductors.The specific process of the application is as follows: CsBr microspheres are deposited on the surface of interdigital electrodes by a simple gas phase evaporation method of cesium bromide, bismuth iodide is used as a reaction raw material, N,N-dimethylformamide is used as a solvent, and a Cs3Bi2Br3I6 array film is in-situ reaction-grown on the CsBr microspheres by multiple spraying and heat treatment, the film is uniform and porous, Cs3Bi2Br3I6 sheet-shaped nanocrystals are vertically grown on the surface and gaps of the CsBr microspheres, the diameter of the CsBr microspheres is 1-3 microns, the thickness of the Cs3Bi2Br3I6 nanosheet is 50-100 nanometers, the film is firmly combined with a base material, and the prepared complex-phase CsBr / Cs3Bi2Br3I6 array film shows room-temperature sensitive performance to hydrogen sulfide gas.Compared with the prior art, the application has the advantages of reasonable preparation process design, high uniformity of large-area film formation, strong operability, high sensitivity to H2S gas at room temperature, and good long-term stability.

The present invention discloses a nonlinear optical crystal bismuth iodide selenite, a preparation method thereof and an application thereof. The nonlinear optical crystal bismuth iodide selenite has a chemical formula of BiSeIO6, is an orthorhombic crystal system, has a space group of Pna2(1), and has unit cell parameters of a=7.115 Å, b=11.335 Å, c=6.717 Å, and V=541.67 Å. 3 A bismuth source, an iodine source, and a selenium source are mixed in a molar ratio of bismuth to iodine to selenium of 1-1.2:1-1.2:1-1.2, and subjected to a hydrothermal reaction at 150-250°C for at least 24 hours to obtain a nonlinear optical crystal, bismuth iodide selenite. The nonlinear optical crystal bismuth iodide selenite of this invention is used in laser frequency conversion devices. It exhibits a strong frequency-doubled effect. Under 1064nm pulsed laser pumping, the powder frequency-doubled intensity generated is six times that of potassium dihydrogen phosphate (KDP) under the same conditions. It also achieves type I phase matching, facilitating the debugging of laser devices and efficient laser frequency conversion applications.

The invention discloses a method for synthesizing a lead-free perovskite thin film in air, which is characterized in that the whole preparation process is completed under an ambient air condition without inert atmosphere protection; the preparation method comprises the following steps: dissolving cesium iodide and bismuth triiodide in a ternary mixed solvent to prepare a cesium bismuth iodide precursor solution; the indium tin oxide substrate is ultrasonically cleaned in an alkaline detergent, deionized water and at least two polar organic solvents in sequence; filtering the precursor solution through a filter membrane, and depositing a cesium bismuth iodide wet membrane on the surface of a pretreated cesium iodide substrate by adopting a two-step spin-coating method; and carrying out annealing treatment on the obtained wet film in air at 80-100 DEG C to form the CsBi3I10 film. By systematically optimizing a DMF: DMSO: ACN ternary solvent system, collaborative regulation and control of CsBi3I10 film crystallization kinetics and morphology are realized in ambient air, the excellent solubility of DMF, the strong coordination crystallization delaying effect of DMSO and the rapid volatilization film-forming promoting characteristic of ACN are fully exerted through the ratio, and a compact and pinhole-free high-quality film with the nearly ideal stoichiometric ratio is formed.

The invention belongs to the technical field of extraction, and specifically relates to a method for preparing cesium iodide from rubidium-cesium enriched material. The method comprises the following steps: S1: high-temperature roasting; S2: dissolving the roasting residue in deionized water and filtering to obtain solution A and filter residue; S3: adding acid to solution A to adjust the pH of solution A to acidic, and at the same time, adding iodide ions to obtain yellow solution B; S4: weighing bismuth oxide and dissolving it in hydrochloric acid to obtain solution C; S5: adding the yellow solution B to solution C to obtain a red solid precipitate D containing cesium and a rubidium-containing solution E; S6: solid-liquid separation; and S7: thermal decomposition treatment. The invention uses bismuth ions and iodide ions as precipitants, adds bismuth ions and iodide ions to a solution containing rubidium-cesium potassium, and reacts to generate precipitated cesium iodide bismuthate, thereby achieving almost selective recovery of cesium in the rubidium-cesium potassium solution. In addition, cesium iodide with a purity greater than 99% can be directly obtained by thermal decomposition of the cesium iodide bismuthate, and the bismuth iodide can be recovered to further prepare the precipitant.

The present disclosure provides X-ray sensing panels, X-ray sensing elements, methods of using the same, and methods of forming semiconductor structures including the same. The X-ray sensing element includes a substrate, first and second metal electrodes on the substrate, an X-ray photoelectric conversion layer continuously extending on the substrate and contacting the first and second metal electrodes, and a third metal electrode and an insulating layer on the substrate. The first and second metal electrodes are spaced apart. The X-ray photoelectric conversion layer includes silicon, amorphous selenium, germanium, cadmium zinc telluride, bismuth iodide, lead oxide, Cs2TeI6 perovskite, CsPbBr3 perovskite, bismuth-based halide perovskite, 6, 13-bis (triisopropylsilylethynyl) pentacene, poly (9, 9-dioctylfluorene), polydimethylsiloxane, or a combination thereof. The third metal electrode is separated from the first and second metal electrodes and the X-ray photoelectric conversion layer by an insulating layer. The X-ray photoelectric conversion layer directly absorbs X-rays and generates light current. The X-ray sensing element has multiple structural patterns, is highly compatible with most processes, and has high signal-to-noise and high photosensitive power.