Method for adjusting morphology, band gap and stability of bismuth iodide-ethylene diamine hybrid material through doping projects

A hybrid material, ethylenediamine technology, applied in chemical instruments and methods, polycrystalline material growth, preparation of organic compounds, etc., can solve problems such as easy oxidation and deterioration, achieve good industrialization prospects, simple synthesis process, good repeatability

Inactive Publication Date: 2019-05-31
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most organic-inorganic hybrid materials are extremely unstable, and are easily oxidized and deteriorated in the air. The material synthesized in this work is a bismuth-based hybrid material,

Method used

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  • Method for adjusting morphology, band gap and stability of bismuth iodide-ethylene diamine hybrid material through doping projects
  • Method for adjusting morphology, band gap and stability of bismuth iodide-ethylene diamine hybrid material through doping projects
  • Method for adjusting morphology, band gap and stability of bismuth iodide-ethylene diamine hybrid material through doping projects

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) Use a graduated cylinder to measure 10.00 mL of ethylenediamine solution and pour it into a three-necked flask, and stir in an ice-water bath;

[0021] (2) Slowly dripping 45.00 mL of concentration into the three-necked flask in step (1) is a 45% hydriodic acid solution, and magnetically stirred for 2 hours to obtain a suspension;

[0022] (3) Pour the suspension in step (2) into a petri dish, and dry it by blasting at 60°C for 20 hours to obtain white crystals;

[0023] (4) The white crystals obtained in step (3) were washed twice with 35.00 mL of ether, put into a petri dish, and then vacuum-dried at 60° C. for 20 hours to obtain white powder A;

[0024] (5) Weigh Bi with a molar ratio of 2:1 2 o 3 and manganese iodide into the sample bottle, followed by adding 10mL of 45% hydroiodic acid solution to obtain a brownish red clear solution;

[0025] (6) Weigh 12.00mmol step (4) white powder A and join in the brown-red clear solution of step (5);

[0026] (7) Put ...

Embodiment 2

[0028] (1) Measure 12mL of ethylenediamine solution with a graduated cylinder and pour it into a three-necked flask, and stir in an ice-water bath;

[0029] (2) Slowly add 50.00 mL of hydriodic acid solution dropwise to the three-necked flask in step (1), and magnetically stir for 4 hours to obtain a suspension;

[0030] (3) Pour the suspension in step (2) into a petri dish, and dry it by blasting at 70° C. for 25 hours to obtain white crystals;

[0031] (4) The white crystals obtained in step (3) were washed 3 times with 45.00 mL of ether, put into a petri dish, and then vacuum-dried at 75° C. for 25 hours to obtain white powder A;

[0032] (5) Weigh Bi with a molar ratio of 2:3 2 o 3 and lead iodide were added to the sample bottle, followed by the addition of 30 mL of 45% hydroiodic acid solution to obtain a brownish-red clear solution;

[0033] (6) Weigh 14.00mmol step (4) white powder A and join in the brown-red clear solution of step (5);

[0034] (7) Put the reaction...

Embodiment 3

[0036] (1) Use a graduated cylinder to measure 15.00 mL of ethylenediamine solution and pour it into a three-necked flask, and stir in an ice-water bath;

[0037] (2) Slowly add 60.00 mL of 45% hydriodic acid solution dropwise to the three-necked flask in step (1), and stir magnetically for 5 hours to obtain a suspension;

[0038] (3) Pour the suspension in step (2) into a petri dish, and dry it by blasting at 80° C. for 30 hours to obtain white crystals;

[0039] (4) The white crystals obtained in step (3) were washed 4 times with 55.00 mL of ether, put into a petri dish, and then vacuum-dried at 80° C. for 30 hours to obtain white powder A;

[0040] (5) Weigh Bi with a molar ratio of 2:5 2 o 3 and antimony iodide into the sample bottle, followed by adding 20mL of 45% hydriodic acid solution to obtain a brownish red clear solution;

[0041] (6) Weigh 15.00mmol step (4) white powder A and join in the brown-red clear solution of step (5);

[0042] (7) Put the reaction solut...

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Abstract

The invention discloses a method for adjusting morphology, band gap and stability of a bismuth iodide-ethylene diamine hybrid material through doping projects. The method aims at research on methods for performing metal element doping on the hybrid material (NH3CH2CH2NH3)Bi2I10 to adjust morphology, optical band gap and stability of the hybrid material to finally obtain hybrid materials with different band gaps, which can be further applied to the fields of organic-inorganic hybrid perovskite solar batteries and semiconductor materials. The method comprises performing adjustment within a certain range on the band gap of an originally prepared narrow-band-gap organic-inorganic low-dimension hybrid material (NH3CH2CH2NH3)Bi2I10. The method for adjusting morphology, band gap and stability ofthe bismuth iodide-ethylene diamine hybrid material through the doping projects has the advantages of being simple in synthesis, mild in reaction conditions, low in cost, good in repeatability, continuously adjustable in optical band gap within a relatively wide range, high in stability and the like, thereby having a good industrialization prospect.

Description

technical field [0001] The invention relates to a method for adjusting the band gap of organic-inorganic hybrid materials through doping engineering. Background technique [0002] Bandgap: The energy difference between the lowest point of the conduction band and the highest point of the valence band, also known as the energy gap. Those with a bandgap exceeding 2eV are considered wide bandgap semiconductors, such as GaN, SiN, and ZnO, and those with a bandgap less than 2eV are narrow bandgap. The larger the band gap, the harder it is for electrons to be excited from the valence band to the conduction band, the lower the intrinsic carrier concentration, and the lower the conductivity. Wide bandgap semiconductors are widely used in blue, violet and ultraviolet optoelectronic devices, high frequency, high temperature, high power electronic devices and field emission devices. Because narrow-bandgap semiconductor materials have excellent light-absorbing properties (generally spe...

Claims

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Application Information

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IPC IPC(8): C07C211/10C07C209/74C07C209/00C30B29/12C30B7/10
Inventor 王吉林毛文慧龙飞郑国源周炳莫淑一陈明光邹正光
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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