A kind of preparation method of z-form bismuth-based photocatalyst

A photocatalyst, bismuth-based technology, applied in the field of nanomaterials, can solve the problems of cost control and quality optimization obstacles, and achieve the effect of high redox potential

Active Publication Date: 2022-07-05
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, photocatalysts based on bismuth-based Z-shaped structures often require multi-step preparation reactions, which makes Z-shaped bismuth-based photocatalysts difficult in cost control and quality optimization.

Method used

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Embodiment 1

[0039] A preparation method of a Z-form bismuth-based photocatalyst, the method steps are as follows:

[0040] (1) Preparation of bismuth iodide precursor

[0041] Disperse 2.5 mmol of bismuth nitrate in 15 mL of ethylene glycol, dissolve it completely after stirring for 1 h, add it to 5 mL of potassium iodide aqueous solution containing 1 mmol of potassium iodide, and continue to stir for 1 h to fully react to obtain reaction solution A.

[0042] (2) Preparation of bismuth iodide-bismuth tungstate precursor

[0043] Add 10 mL of sodium tungstate aqueous solution containing 1 mmol sodium tungstate to the reaction solution A prepared in step (1), and continue stirring for 0.5 h to obtain a reaction solution with a reducing chemical atmosphere, which contains bismuth iodide-bismuth tungstate precursor.

[0044] (3) Transfer the reaction solution obtained in step (2) to a hydrothermal reaction kettle with a volume of 50 mL, and react at 140° C. for 10 hours; after naturally coo...

Embodiment 2

[0047] A preparation method of a Z-form bismuth-based photocatalyst, the method steps are as follows:

[0048] (1) Preparation of bismuth iodide precursor

[0049] Disperse 2.3 mmol of bismuth nitrate in 15 mL of dimethyl sulfoxide, dissolve it completely after stirring for 1 h, add it to 5 mL of sodium iodide aqueous solution containing 1 mmol of sodium iodide, continue to stir for 1 h, and fully react to obtain a reaction solution, wherein A precursor containing bismuth iodide.

[0050] (2) Preparation of bismuth iodide-bismuth vanadate precursor

[0051] To the reaction solution obtained in step (1), add 5 mL of sodium vanadate aqueous solution containing 1 mmol of sodium vanadate, continue stirring for 0.5 h, add 5 mL of ascorbic acid aqueous solution containing 0.3 mmol of ascorbic acid to obtain a reaction solution with a reducing chemical atmosphere , which contains bismuth iodide-bismuth vanadate precursor.

[0052] (3) Transfer the reaction solution obtained in ste...

Embodiment 3

[0055] A preparation method of a Z-form bismuth-based photocatalyst, the method steps are as follows:

[0056] (1) Preparation of bismuth iodide precursor

[0057] Disperse 2.2 mmol of bismuth nitrate in 15 mL of water, stir for 1 hour and disperse evenly, add 5 mL of sodium iodide ethylene glycol solution containing 1 mmol of sodium iodide, continue to stir for 1 hour, and fully react to obtain a reaction solution, which contains iodine Oxybismuth precursor.

[0058](2) Preparation of bismuth iodide-bismuth ferrite precursor

[0059] To the reaction solution obtained in step (1), add 5 mL of ferric chloride ethylene glycol solution containing 1 mmol of ferric chloride, continue stirring for 0.5 h, and add 5 mL of aqueous glucose solution containing 0.2 mmol of glucose to obtain a reducing chemical solution. Atmospheric reaction solution containing bismuth iodide-bismuth ferrite precursor.

[0060] (3) Transfer the reaction solution obtained in step (2) to a hydrothermal re...

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Abstract

The invention relates to a preparation method of a Z-form bismuth-based photocatalyst, and belongs to the technical field of nanomaterials. By adding the bismuth salt and the iodine source into the solvent to dissolve completely or to disperse uniformly, a reaction solution containing the precursor of bismuth iodide is obtained after sufficient reaction; the composite phase substance and the reducing agent are added to the reaction solution prepared in step (1) to react , obtain a reaction solution with a reducing chemical atmosphere, containing bismuth iodide-composite phase precursor; heat the reaction solution obtained in step (2) with a solvent, and separate and dry the reaction solution after the solvent heat treatment to obtain the catalyst. . The catalyst can retain a high redox potential on the basis of effectively separating electron-hole pairs; compared with the heterojunction structure obtained without adding a reducing agent, it has the ability to complete the photocatalytic degradation of organic compounds such as rhodamine B faster. Effect.

Description

technical field [0001] The invention relates to a preparation method of a Z-form bismuth-based photocatalyst, and belongs to the technical field of nanomaterials. Background technique [0002] At present, the pollution of water environment mainly comes from the discharge of heavy metals and organic matter. Among the existing pollutant treatment technologies, photocatalysis technology, which utilizes the light energy of sunlight to be converted into chemical energy for degrading organic matter, is one of the more effective methods. The core of the photocatalytic method is the choice of photocatalyst. Traditional semiconductor photocatalysts, such as zinc oxide, titanium oxide, etc., mainly use ultraviolet light due to the large forbidden band width in the semiconductor structure, and the utilization rate of visible light, which occupies a large proportion in natural light, is poor. However, bismuth-based photocatalysts, especially semiconductor nano-photocatalysts based on ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/06B82Y20/00B82Y30/00B82Y40/00B01J37/10C02F1/30C02F101/38C02F101/34C02F101/36
CPCB01J27/06B82Y20/00B82Y30/00B82Y40/00B01J35/004B01J37/10C02F2101/38C02F2101/34C02F2101/308C02F2101/36C02F2305/10C02F2305/08Y02W10/37
Inventor 崔岩岩黄玲玲程岩
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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