Manufacturing
semiconductor device includes forming
photoresist layer.
Photoresist layer is selectively exposed to actinic
radiation and developed to form pattern.
Photoresist composition includes:
iodine-containing sensitizer, photoactive compound,
polymer.
Iodine-containing sensitizer includes
ammonium,
phosphonium, or heterocyclic
ammonium iodides,where X1, X2, X3, and X4 are independently direct bond, C6-C30 iodo-
aryl group, C1-C30 iodo-
alkyl group, C3-C30 iodo-cycloalkyl group, C1-C30 iodo-hydroxylalkyl group, C2-C30 iodo-
alkoxy group, C3-C30 iodo-alkoxyl
alkyl group, C1-C30 iodo-acetyl group, C2-C30 iodo-acetylalkyl group, C1-C30 iodo-carboxyl group, C2-C30 iodo-alky carboxyl group, and C4-C30 iodo-cycloalkyl carboxyl group; C3-C30 saturated or unsaturated iodo-
hydrocarbon ring, or C3-C30 iodo-heterocyclic group; A1, A2, A3, A4 are independently
acid labile group selected from C6-C15 iodo-
aryl group, C4-C15 iodo-
alkyl group, C4-C15 iodo-cycloalkyl group, C4-C15 iodo-hydroxylalkyl group, C4-C15 iodo-
alkoxy group, and C4-C15 iodo-alkoxyl alkyl group.