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Preparing method of perovskite solar cell and perovskite solar cell

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of difficult preparation of large areas and low utilization rate of solar cell raw materials, so as to achieve large-scale industrial production and improve the use of raw materials rate, the effect of improving the reaction efficiency

Inactive Publication Date: 2016-11-23
深圳市先进清洁电力技术研究有限公司
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Problems solved by technology

But at present, this method is not easy to prepare large-area solar cells and the utilization rate of raw materials is low

Method used

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  • Preparing method of perovskite solar cell and perovskite solar cell
  • Preparing method of perovskite solar cell and perovskite solar cell
  • Preparing method of perovskite solar cell and perovskite solar cell

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preparation example Construction

[0028] like figure 1 As shown, it is a flow chart of a preparation method of a perovskite solar cell according to an embodiment of the present invention, and the method includes:

[0029] 101. Deposit a p-type organic conductive layer on the fluorine-doped tin dioxide FTO conductive glass;

[0030] 102. Deposit two layers of lead iodide (PbI) on the p-type organic conductive layer by first spin coating and then high temperature evaporation 2 Floor;

[0031] 103. Using ultrasonic spraying method on lead iodide PbI 2 Layer Spray Methyl Ammonium Iodide CH 3 NH 3 I precursor solution reacts to obtain a layer of organic-inorganic hybrid perovskite structure CH 3 NH 3 PbI 3 Floor;

[0032] 104. In CH 3 NH 3 PbI 3 depositing an n-type organic conductive layer on the layer;

[0033] 105. Deposit a layer of modification layer on the n-type organic conductive layer;

[0034] 106. Deposit a metal electrode layer on the modification layer.

[0035] Preferably, the depositing...

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Abstract

The embodiment of the invention provides a preparing method of a perovskite solar cell and the perovskite solar cell. The method comprises the steps that a p-type organic conductive layer is deposited on fluorine-doped stannic oxide FTO conductive glass; two lead iodide PbI2 layers are deposited on the p-type organic conductive layer with the method of carrying out spin coating first and then carrying out high-temperature evaporation; a methyl ammonium iodide CH3NH3I precursor solution is sprayed to the lead iodide PbI2 layers with an ultrasonic spraying method, and thus a Ch3NH3PbI3 layer of an organic and inorganic hybrid perovskite structure is obtained through a reaction; an n-type organic conductive layer is deposited on the Ch3NH3PbI3 layer; a modification layer is deposited on the n-type organic conductive layer; a metal electrode layer is deposited on the modification layer. According to the technical scheme, the preparing method of the perovskite solar cell and the perovskite solar cell have the advantages that preparation is carried out with the method of carrying out spin coating first and then carrying out high-temperature evaporation, the reaction efficiency can be improved, and the PbI2 layers and the CH3NH3I layer can react more sufficiently; preparation is carried out with the ultrasonic spraying method, the utilization rate of raw materials can be increased, the production cost can be reduced, and large-area industrialized production can be achieved.

Description

technical field [0001] The invention relates to the field of perovskite solar cells (Perovskite Solar Cells), in particular to a preparation method of the perovskite solar cell and the perovskite solar cell. Background technique [0002] Organic-inorganic hybrid perovskite materials have been introduced into organic solar cells by scientists due to their high carrier mobility, long diffusion length, tunable optical band gap, and bipolar transport, which effectively improve the efficiency of this type of solar energy. battery efficiency. Solid-state solar cells based on such organic-inorganic hybrid perovskite materials have developed rapidly in terms of efficiency improvement. In just a few years, the reported laboratory efficiency has increased from 3.8% in 2009 to 21.0% today. Such rapid development is due to the excellent optoelectronic properties of the semiconductor material and its tolerance to defects. According to this level of development, it is believed that the ...

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Application Information

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IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K71/164H10K30/10Y02E10/549Y02P70/50
Inventor 赖其聪周航陈乐伍
Owner 深圳市先进清洁电力技术研究有限公司
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