Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing composition

A technology of polishing composition and polishing accelerator, applied in the field of polishing composition, capable of solving problems such as poor micro-waviness value of substrates

Inactive Publication Date: 2005-02-09
FUJIMI INCORPORATED
View PDF1 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the method of preparing a substrate using a polishing composition after polishing as described in Japanese Patent Laid-Open Patent No. 2003-147337, the substrate has a poor value of microwaviness, which is an index of surface smoothness. index

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] An embodiment of the present invention will be described below.

[0011] According to the present embodiment, the polishing composition contains: an abrasive, a fretting agent, an oxidizing agent, a polishing accelerator, and water. The polishing compositions are useful for polishing, for example, magnetic disk substrates. The substrate can be formed by plating a nickel-phosphorus electroless plating layer on an aluminum alloy blank element, or by plating a nickel-iron layer on a blank element. Alternatively the substrate may be a boron carbide or carbon containing substrate.

[0012] The abrasive works during the mechanical polishing of the object, and the abrasive preferably contains at least one component selected from the following group: aluminum oxide, silicon oxide, cerium oxide, zirconium oxide, titanium oxide, silicon carbide, silicon nitride . More preferably, it contains silicon dioxide. Silica is less likely to cause scratches during the polishing proces...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The polishing composition contains an abrasive, a microwaviness reducing agent, an oxidizing agent, a polishing accelerator, and water. The microwaviness reducing agent is a reducing agent and contains at least one kind selected from phosphonic acid, phosphinic acid, ammonium hypophosphite, ammonium sulfite, sodium sulfite, hydroquinone, pyrogallol, erysorbic acid, sodium erysorbate acid, L-ascorbic acid, formic acid, sodium formate, amumonium formate, oxalic acid, ammonium oxalate, ammonium iodide, and gallic acid. The abrasive can contain silicon dioxide, and the oxidizing agent can contain hydrogen peroxide. The accelerator can contain e.g. phosphoric acid, glycolic acid, maleic acid or succinic acid as well as diammonium hydrogen phosphate or ammonium dilhydrogen phosphate. The polishing composition can be used in polishing a substrate for a magnetic disk.

Description

technical field [0001] The present invention relates to a polishing composition for polishing a substrate such as a magnetic disk or the like. Background technique [0002] For a magnetic disk to be used as a hard disk as a storage device for a computer, it is required to have a high recording density. Therefore, the substrates used for magnetic disks are required to have very good surface properties, such as high surface smoothness and trace surface scratches. [0003] Japanese Laid-Open Patent No. 2003-147337 discloses a polishing composition which is modified to meet the (high surface property) requirements of substrates. Polishing compositions containing abrasive particles such as aluminum oxide, inorganic acids containing phosphorus, such as phosphoric acid or phosphate salts, inorganic acids such as nitric acid in addition to inorganic acids or salts containing phosphorus, oxidizing agents such as hydrogen peroxide, and water. Inorganic ac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00C09G1/02C09K3/14C09K13/04C09K13/06G11B5/84
CPCC09G1/02G11B5/8404G11B5/84
Inventor 神谷知秀横道典孝大胁寿树
Owner FUJIMI INCORPORATED
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products