Preparation method of large-size two-dimensional bismuth iodide single crystal

Abstract

The invention discloses a preparation method of a large-size two-dimensional bismuth iodide single crystal. The method comprises the following steps: S1, putting bismuth iodide powder into a corundum boat with an opening at one end, and then inversely buckling a fluorophlogopite substrate on the corundum boat; s3, introducing argon and hydrogen into the tubular furnace, and making the gasified bismuth iodide diluted and subjected to a reduction reaction; s4, after the reaction is finished, making the gas phase trap moved to a heating belt at the tail end of the tube furnace for cooling, and in the cooling process, making gas in the corundum boat deposited on the fluorophlogopite substrate to form attachment; and S5, after the gas phase trap is completely cooled, obtaining the two-dimensional bismuth iodide single crystal. The preparation method of the large-size two-dimensional bismuth iodide single crystal solves the problems that the bismuth iodide single crystal prepared by the existing method is small in size and uncontrollable in thickness, the whole preparation process is simple, the operation is convenient, and the repeatability is good; and two-dimensional single crystal bismuth iodide with different thicknesses and sizes can be obtained by controlling the cooling rate.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional material preparation, and in particular relates to a method for preparing a large-size two-dimensional bismuth iodide single crystal. Background technique [0002] Two-dimensional materials are a general term for a large class of layered materials. Their layers are connected by strong covalent bonds, and the layers are connected by weak van der Waals forces. Therefore, by changing the deposition temperature and pressure or airflow to adjust the size and thickness of 2D materials. Generally speaking, when the thickness of two-dimensional materials is reduced below 10nm, the properties of the materials will change dramatically due to the influence of surface effects and size effects. For example: bulk graphite is only a good conductor of electricity, while bilayer graphene is a semiconductor. Nowadays, research on two-dimensional materials mainly focuses on graphene, boron nitride, and nit...

AI Technical Summary

Problems solved by technology

However, the growth of two-dimensional bismuth iodide single crystals is still in an almost blank stage, and the maximum size is still less than 10 μm, making further applications impossible.

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