38results about How to "Increase working current density" patented technology

The invention discloses a bipolar membrane and a preparation method thereof. In the invention, metal phthalocyanine derivants are adhered to at least one monopolar membrane in the bipolar membrane to form the bipolar membrane of an intermediate interface layer formed by the metal phthalocyanine derivants. The bipolar membrane prepared by the method has the advantages of acid resistance and alkali resistance, high hydrolysis efficiency, high hydrogen and hydroxyl ion permeability, high working current density, small membrane impedance, low working voltage, simple overall bipolar membrane preparation process and the like.

The invention relates to a gradient electrode for flow batteries. The gradient electrode is formed by: stacking at least two layers of graphite fiber or carbon fiber felt with different bulk densities in an order from low bulk density to high bulk density, and making the materials into a whole by longitudinal needling perpendicular to an electrode surface. The electrode can effectively reduce the resistance of the electrode body, and lower the flow resistance of an electrolyte solution and provide more reaction sites, thus finally reducing ohmic polarization, electrochemical polarization and concentration polarization of flow batteries. The gradient electrode provided by the invention improves the energy efficiency and voltage efficiency of flow batteries so as to improve the working current density, thus greatly reducing the weight, volume and cost of batteries with similar output power.

A difunctional negative electrode for an all-vanadium redox energy storage battery negative electrode includes a carbon matrix material and a Bi-containing electro-catalyst modifying the surface of the carbon matrix material. The negative electrode is suitable for being used as the negative electrode of the all-vanadium redox energy storage battery, can greatly improve the electrocatalytic activity and electrochemical reversibility of an electrode material on a V<2+>/V<3+> redox reaction, and decreases the charge transfer resistance; and the negative electrode has high hydrogen evolution overpotential, can inhibit a hydrogen evolution reaction, and prolongs the work life of the battery. The difunctional negative electrode improves the voltage efficiency and energy efficiency of the all-vanadium redox energy storage battery, so the working current density of the battery is improved, and the weight, the size and the cost of the battery with same output power are greatly reduced.

This invention relates to a shipping cathode protective metal oxide anode assembly, which is composed of anode, conducting bar, insulating bracket and fixing frame, the anode uses titanium as base, which assumes disc shape, the working surface is coated with ceramic compound metal oxide conducting coat, the opposite side is welded with conducting pole with solid titanium bar or copper core compound titanium bar, the anode bracket uses glass fiber to reinforce epoxy resin compound material and shape by thermoforming, the anode is pressed tightly by fixing frame and fixed by bolt, and the fixing frame is made by using corrosion-resistance polymer material. The ship with assistant anode assembly is fit for installing at the part whose curvature half-diameter is shorter, which has well electrochemical capability, not easy to damage, and can work long; and it has long life and well stability.

The invention discloses a base region gradient P<+>-N-N<+> type SiC ultrafast recovery diode manufactured on a 4H type single crystal silicon carbide epitaxial layer and a process. An anode/(P<+>)4H-nc-SiC/(N) slowly changes into a 6H-nc-SiC/(N)4H-c-SiC/(N<+>)4H-c-SiC/cathode. The base region gradient P<+>-N-N<+> type SiC ultrafast recovery diode comprises an N<+> type 4H-c-SiC substrate, an N type 4H-c-SiC epitaxial layer, an N type 6H-nc-SiC gradually-doped and grain-gradient multilayer film and a P<+> type 4H-c-SiC single layer film, wherein the outer sides of the N<+> type 4H-c-SiC substrate and the P<+> type 4H-c-SiC single layer film are in ohm connection with an anode NiAu and an anode TiAu respectively. The device structure is made by using a PECVD (Plasma Enhanced Chemical Vapor Deposition) technology. The process has the advantages of shortening the reverse recovery time, inhibiting surge current and lowering the process temperature.

The invention provides a silicon carbide trench type MOSFETs integrated with an SBD and a preparation method thereof. A side wall gate electrode contact of the MOSFETs is located on the side wall of amain trench, a source electrode metal contact is formed at the bottom of the trench, and a Schottky metal contact is integrated. When a first quadrant is conducted forward, electrons flow from bottomto top through an inversion layer of the side wall of the trench, and a reverse conduction channel different from a conventional trench MOSFETs is formed. When a third quadrant is conducted forward,a Schottky diode is conducted at first, effectively inhibiting conduction of an in-vivo parasitic PN diode. During reverse blocking, a p-type shield layer at the bottom of the trench effectively shields a high electric field in a device body region, so that a device gate dielectric electric field and a Schottky contact electric field are greatly reduced, and an avalanche occurs at a PN junction ofthe device body region. The silicon carbide trench type MOSFETs integrated with an SBD has a low total chip area, satisfies good first and third quadrant conduction characteristics and reverse blocking abilities, and enables the static and dynamic reliability of a device to be improved.

The invention relates to a combined electrode for a flow energy storage battery and a flow energy storage battery containing the combined electrode. The combined electrode comprises a conducting layer and a catalyst layer which are superimposed mutually. The thickness of the conducting layer is 10-90% of the total thickness of the electrode. The conducting layer is made of carbon materials with good conductivity and low porosity. The catalyst layer is made of carbon materials with high electrocatalytic activity and high porosity. The self resistance of the electrode and the contact resistance between bipolar plates of the electrode are decreased, and finally the Ohm internal resistance of the flow energy storage battery is decreased. The energy efficiency and the voltage efficiency of the flow energy storage battery are raised, and therefore the working current density is raised, thus, the weight, the volume and the cost of the battery with the same output power are all decreased greatly.

The invention discloses a high-bandwidth GaN-based LED light-emitting device with a vertical conductive structure and a preparation method. The light-emitting device is a microarray formed by seriallyconnecting LEDs on an insulating substrate end to end through N-type electrodes and P-type electrodes. Each LED comprises an N-type electrode, a conductive substrate, an LED epitaxial structure and aP-type electrode. The insulating substrate, the N-type electrodes, the conductive substrates, the LED epitaxial structures and the P-type electrodes are sequentially arranged from bottom to top. According to the invention, the micron-sized LEDs are designed to form an array, so that the junction capacitance of the LEDs is reduced, the working current density is increased, and the modulation bandwidth of the LEDs is improved. The current crowding effect of the LEDs is reduced by using the vertical conductive structure, the influence of the heat effect on the bandwidth is reduced, and the modulation bandwidth is further improved.

The application provides an organic light emitting diode device and a preparation method thereof, a display substrate and a display device. The organic light-emitting diode device comprises a substrate, an anode layer, an organic functional layer and a cathode layer, and the anode layer, the organic functional layer and the cathode layer are stacked on one side of the substrate; the organic functional layer comprises a first functional layer, a second functional layer and a light-emitting layer which are stacked, and the first functional layer is arranged close to the anode layer; the HOMO energy level of the second functional layer is deeper than the HOMO energy levels of the first functional layer and a light-emitting layer host material. According to the technical scheme, the second functional layer material with the relatively deep HOMO energy level is arranged; a hole blocking barrier is formed at the interface of the first functional layer 11 and the second functional layer 12 and thus the light-emitting efficiency of the organic light-emitting diode device under extremely low current is extremely low, so that the picture quality of an OLED under extremely low gray scale andlow brightness can be improved, the influence of leakage current on the picture quality can be reduced, and the problem of crosstalk between pixels is solved.