Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flexible substrate-based semiconductor epitaxial structure, VCSEL and manufacturing method

A flexible substrate and epitaxial structure technology, which is applied in the field of semiconductors, can solve the problems of semiconductor epitaxial layer growth difficulties, etc., and achieve the effects of reducing threading dislocations, easy peeling, and difficult growth

Active Publication Date: 2020-01-31
XIAMEN QIANZHAO SEMICON TECH CO LTD
View PDF8 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the current research, C60 film or metal (such as molybdenum-tungsten-selenium alloy) is only grown on fluorphlogopite, and fluorphlogopite has not been used as a semiconductor epitaxial substrate. The reason is that the semiconductor epitaxial layer is on the fluorphlogopite substrate. difficult to grow

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible substrate-based semiconductor epitaxial structure, VCSEL and manufacturing method
  • Flexible substrate-based semiconductor epitaxial structure, VCSEL and manufacturing method
  • Flexible substrate-based semiconductor epitaxial structure, VCSEL and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] A semiconductor epitaxial structure based on a flexible substrate, such as Figure 4 Shown, comprise fluorine phlogopite substrate 1 and be located at the buffer layer 2 on fluorine phlogopite substrate 1, described buffer layer 2 comprises:

[0071] A multi-layer first GaInP buffer layer 21 and a multi-layer second GaInP buffer layer 22, the multi-layer first GaInP buffer layer 21 is sequentially arranged on the fluorophlogopite substrate 1 from bottom to top; two adjacent layers of the first GaInP buffer layer 21 and between the fluorophlogopite substrate 1 and the adjacent first GaInP buffer layer 21 are respectively provided with the second GaInP buffer layer 22 . That is, the second GaInP buffer layers 22 and the first GaInP buffer layers 21 are alternately disposed on the fluorine phlogopite substrate 1 from bottom to top.

[0072] The In composition of the multilayer first GaInP buffer layer 21 decreases layer by layer from bottom to top, the In composition of t...

Embodiment 2

[0075] A method for growing a semiconductor epitaxial structure based on a flexible substrate, for making the semiconductor epitaxial structure based on the flexible substrate of the first embodiment above, comprising:

[0076] Provide a fluorine phlogopite substrate;

[0077]A buffer layer is grown on the fluorophlogopite substrate, the buffer layer includes a multi-layer first GaInP buffer layer and a multi-layer second GaInP buffer layer, and the multi-layer first GaInP buffer layer grows sequentially from bottom to top, two adjacent The second GaInP buffer layer is respectively provided between the first GaInP buffer layers and between the fluorine phlogopite substrate and the adjacent first GaInP buffer layer. Specifically, the buffer layer comprising multiple first GaInP buffer layers and multiple second GaInP buffer layers can be formed by alternately growing the second GaInP buffer layer and the first GaInP buffer layer multiple times on the fluorophlogopite substrate....

Embodiment 3

[0079] A VCSEL, comprising the semiconductor epitaxial structure based on the flexible substrate described in the first embodiment above, further comprising: an N-type DBR layer 3 sequentially stacked on the buffer layer 2 from bottom to top, a first separation limiting heterogeneous Junction 7, multi-quantum well layer 4, second separation confinement heterojunction 8, oxide layer 5 and P-type DBR layer 6, the structure diagram is as follows Figure 6 shown.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a flexible substrate-based semiconductor epitaxial structure, a VCSEL and a manufacturing method. According to the flexible substrate-based semiconductor epitaxial structure,the VCSEL and the manufacturing method, fluorophlogopite is adopted as a substrate, and therefore, the problem that an existing semiconductor substrate cannot be bent and is not easy to peel off is solved, and the temperature requirement of a semiconductor device is set. According to buffer layers, a plurality of first GaInP buffer layers are gradually changed layer by layer, presenting a step gradient trend; a second GaInP buffer layer is inserted between two adjacent first GaInP buffer layers of which the In components change in a gradient manner, the direction of the In component gradient change of the second GaInP buffer layer being opposite to the direction of the In component gradient change of the first GaInP buffer layers, and therefore, an In component fluctuating and gradually-changing structure can be formed, and compressive stress is introduced into the buffer layers; the interaction of dislocation is increased, so that the surface of the structure is smoother; penetrationdislocation is reduced; the quality of an epitaxial layer on the fluorophlogopite substrate is improved; and the application of the fluorophlogopite substrate to the semiconductor device is realized.The VCSEL has the advantages of bendability, easiness in stripping, good epitaxial layer quality, high light emitting efficiency and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor epitaxial structure based on a flexible substrate, a VCSEL and a manufacturing method. Background technique [0002] VCSEL, the full name is Vertical Cavity Surface Emitting Laser (Vertical Cavity Surface Emitting Laser), developed on the basis of gallium arsenide semiconductor materials, different from other light sources such as LED (light emitting diode) and LD (Laser Diode, laser diode), has a volume Small, circular output spot, single longitudinal mode output, low threshold current, low price, easy integration into large-area arrays, etc., are widely used in optical communication, optical interconnection, optical storage and other fields. [0003] The base of the existing VCSEL is usually a GaAs substrate. However, the physical characteristics of the GaAs substrate, such as inflexibility, poor mechanical properties, and difficult peeling, limit the app...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/02H01S5/183
CPCH01S5/0206H01S5/183
Inventor 李峰柱田宇刘潇杰韩效亚杜石磊
Owner XIAMEN QIANZHAO SEMICON TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com