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Preparation method of fluorphlogopite mica, and application of fluorphlogopite mica in preparation of two-dimensional crystals

A technology of fluorocrystalline mica and sodium fluoride, applied in the material field, can solve the problems of poor flatness, poor stability of fluorocrystalline mica, very high requirements on transparency and flatness, and achieves the effect of high cost and smooth surface

Active Publication Date: 2019-04-30
长春市泰元氟金云母有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the fluorophlogopite prepared by these methods melts at high temperature and crystallizes after cooling, and the sudden change of cold and heat leads to poor stability and poor flatness of the prepared fluorophlogopite. At the same time, the fluorophlogopite prepared by some methods also has the problem of high impurity content.
[0005] In recent years, fluorophlogopite has been gradually applied to two-dimensional crystals as a matrix. For example, fluorophlogopite is used to grow quantum materials such as high-mobility two-dimensional semiconductors and topological insulators. These materials are mainly used in transparent conductive films and other light-transmitting materials. In the field of electrical components and other fields, the transparency and flatness of the material itself are very high, and the fluorine phlogopite in the prior art cannot meet the requirements for the preparation of high-quality two-dimensional crystal materials.

Method used

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  • Preparation method of fluorphlogopite mica, and application of fluorphlogopite mica in preparation of two-dimensional crystals
  • Preparation method of fluorphlogopite mica, and application of fluorphlogopite mica in preparation of two-dimensional crystals

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Embodiment 1

[0045] The present embodiment provides a kind of preparation method of fluorphlogopite, comprises the steps:

[0046] Step 1, mixing 50.5g of magnesite, 28.2g of montmorillonite and 18.02g of quartz sand through a high-speed mechanical impact mill and pulverizing into a mixture of millimeter-scale fine sand particles, the particle size of which is 0.01-1mm;

[0047] Step 2, adding 200 mL of 1mol / L nitric acid solution to the fine sand mixture to react to obtain a suspension;

[0048] Step 3, add the sodium fluoride of 16.8g and the potassium chloride of 14.9g stirring reaction in the suspension liquid, then adjust the pH value of the solution by the sodium hydroxide solution of 0.5mol / L to be neutral, centrifuge to obtain the precipitate, the The precipitate was calcined in a muffle furnace at 550°C for 5 hours, then kept for 12 hours, and then gradually cooled to room temperature at a cooling rate of 1°C / min to obtain the crude fluorophlogopite;

[0049] Step 4, the crude fl...

Embodiment 2

[0052] This implementation provides the application of the fluorophlogopite prepared in Example 1 above in the preparation of two-dimensional crystals. This application is specifically to provide the fluorphlogopite prepared in Example 1 for the preparation of Bi 2 o 2 Se two-dimensional crystal thin film material, comprises the steps:

[0053] Step 1: Perform plasma etching on the fluorophlogopite mica prepared in Example 1 to obtain a patterned fluorophlogopite matrix. The plasma etching power is 100 W, and the etching time is 15 minutes.

[0054] Step 2, deposit Bi on the fluorophlogopite substrate by pulsed laser deposition (deposition temperature is 550°C, deposition time is 10min) 2 o 2 Se thus prepares Bi 2 o 2 Se two-dimensional crystal thin film material. After testing, the Bi 2 o 2 The mobility of Se two-dimensional crystal thin film material is as high as 1800 cm 2 V -1 the s -1 ; Photoelectric responsivity up to 2000 AW at 550nm -1 .

[0055] The pul...

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Abstract

The invention provides a preparation method of fluorphlogopite mica, and an application of the fluorphlogopite mica in the preparation of two-dimensional crystals. The preparation method of fluorphlogopite mica comprises the following steps: mixing magnesite, montmorillonite and quartz sands, and crushing the obtained mixture by a high-speed mechanical shock mill to form a millimeter-scale fine sand grain mixture; adding a nitric acid solution to the fine sand grain mixture, and carrying out a reaction to obtain a suspension; adding sodium fluoride and potassium chloride to the suspension, performing stirring and reacting, adjusting the pH value of the obtained solution to 7 by using a sodium hydroxide solution, performing centrifuging to obtain a precipitate, calcining the precipitate, and gradually cooling the obtained material to obtain crude fluorphlogopite mica; and stripping the crude fluorphlogopite mica by using supercritical carbon dioxide to obtain slices which are the prepared fluorphlogopite mica. The prepared fluorphlogopite mica has the advantages of low impurity content, good stability and high smoothness; the two-dimensional crystals prepared from the fluorphlogopite mica have a high mobility reaching 1800 cm<2> V<-1>s<-1>; and the photoelectric responsibility at 550 nm reaches up to 2000 AW<-1>.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a preparation method of fluorophlogopite and its application in the preparation of two-dimensional crystals. Background technique [0002] Natural mica is a kind of natural non-metallic ore in nature. It belongs to silicate. Natural mica contains many kinds of components, the most important components are silicon and aluminum. The silicon content accounts for about 49%, and the aluminum content accounts for about 30%. Its chemical formula is KAl 2 (AlSi 3 o 10 )(OH) 2 and KMg 3 (AlSi 3 o 10 )(OH) 2 , Natural mica has been widely used in the chemical and electrical industries due to its good insulation, high temperature resistance, acid and alkali resistance and other characteristics. However, with the continuous development of science and technology, people found that although natural mica has very good characteristics, it has great limitations in many field...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/42C23C14/02C23C14/06C23C14/28C30B7/14C30B29/22C30B29/64
CPCC23C14/022C23C14/0623C23C14/28C30B7/14C30B29/22C30B29/64C01B33/42C01P2004/03C01P2006/40Y02P20/54
Inventor 张梅林
Owner 长春市泰元氟金云母有限公司
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