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Preparation method of tantalum-doped large-area two-dimensional niobium disulfide material

A niobium disulfide, large-area technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of difficult to accurately control the thickness and size, unable to prepare in batches, laborious, etc., and achieve good repeatability , convenient material acquisition method, high deposition rate effect

Active Publication Date: 2021-07-16
ANHUI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a method for preparing a tantalum-doped large-area two-dimensional niobium disulfide material, which is used to solve the needs of most researches The thin-layer samples used are all prepared by mechanical peeling method, which has problems such as time-consuming, laborious, unable to be prepared in batches, and difficult to accurately control thickness and size

Method used

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  • Preparation method of tantalum-doped large-area two-dimensional niobium disulfide material
  • Preparation method of tantalum-doped large-area two-dimensional niobium disulfide material
  • Preparation method of tantalum-doped large-area two-dimensional niobium disulfide material

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Embodiment 1

[0033] see Figure 1-5 As shown, a large-area two-dimensional niobium disulfide material, the large-area two-dimensional niobium disulfide material is made by the following steps:

[0034] Step S1: Paste 3M adhesive tape on the front and back surfaces of fluorphlogopite mica in the ultra-clean workbench, use a method similar to mechanical peeling, tear off the surface layer of the front and back surfaces of fluorophlogopite mica, and store it in an electronic drying box for future use ;Use acetone, isopropanol, and ethanol in sequence to ultrasonically clean the silicon wafer, and then cut it into 35×13mm with a silicon knife 2 Put it in the silicon wafer box for later use;

[0035] Step S2: Weigh 18mg of niobium pentoxide powder, 180mg of ammonium chloride powder and 200mg of sulfur powder respectively, put niobium pentoxide and ammonium chloride into a mortar and grind until the two are evenly mixed, then put the mixture In the quartz boat A, then place the sulfur powder i...

Embodiment 2

[0041] see Figure 6-10 Shown: a tantalum-doped large-area two-dimensional niobium disulfide material, the tantalum-doped large-area two-dimensional niobium disulfide material is made by the following steps:

[0042] Step S1: Paste 3M adhesive tape on the front and back surfaces of fluorphlogopite mica in the ultra-clean workbench, use a method similar to mechanical peeling, tear off the surface layer of the front and back surfaces of fluorophlogopite mica, and store it in an electronic drying box for future use ;Use acetone, isopropanol, and ethanol in sequence to ultrasonically clean the silicon wafer, and then cut it into 35×13mm with a silicon knife 2 Put it in the silicon wafer box for later use;

[0043]Step S2: Weigh 9mg of niobium pentoxide powder, 9mg of tantalum pentoxide powder, 180mg of ammonium chloride powder and 200mg of sulfur powder respectively, put niobium pentoxide, tantalum pentoxide and ammonium chloride into Grind in a mortar until the three are evenly...

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Abstract

The invention discloses a preparation method of a tantalum-doped large-area two-dimensional niobium disulfide material, belongs to the technical field of preparation of two-dimensional materials, and is used for solving the problems that thin-layer samples required to be used in most researches are prepared by adopting a mechanical stripping method, and the method is time-consuming, labor-consuming, incapable of realizing batch preparation, difficult to accurately control thickness and size and the like. According to the preparation method of the tantalum-doped large-area two-dimensional niobium disulfide material provided by the invention, the transition metal oxide and the powdered sulfur are taken as source substances, the fluxing salt ammonium chloride is introduced, the fluorophlogopite and a silicon wafer are taken as a growth substrate, and the tantalum-doped large-area two-dimensional niobium disulfide material is prepared through rapid growth under the nitrogen-hydrogen mixed carrier gas, the prepared two-dimensional material has larger size, the maximum size of niobium disulfide can reach 115 micrometers, the size of tantalum-doped niobium disulfide can reach 112 micrometers, and compared with a traditional method for preparing the two-dimensional material through mechanical stripping, the method has the advantages of being high in deposition rate, controllable in crystal structure and surface morphology, good in repeatability and the like.

Description

technical field [0001] The invention relates to the technical field of two-dimensional material preparation, in particular to a method for preparing a large-area two-dimensional niobium disulfide material doped with tantalum. Background technique [0002] Two-dimensional transition metal dichalcogenides usually have novel properties such as superconductivity, charge density wave, and metal-insulator transition. Ideal materials for superconductivity and charge density wave origin and interaction relations. Niobium disulfide (NbS 2 ) as a layered transition metal sulfide material has attracted extensive attention due to its superconductivity, optical properties, and magnetic properties. In addition, monolayer tantalum disulfide (TaS 2 ) has two structures of 2H and 1T, different structures determine its properties are also different, 2H-TaS 2 It will exhibit superconductivity at temperatures as low as 2.2K, 1T-TaS 2 As the temperature decreases, the transition from non-co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/02C23C16/44
CPCC23C16/305C23C16/0227C23C16/4401Y02P70/50
Inventor 李惠刘丰恺韩慧
Owner ANHUI UNIVERSITY
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