Systems and procedures for the integrated
decomposition of a semiconducting
wafer and its scanning for organic and
inorganic contaminants are described.In one aspect, a method comprises, but is not limited to, positioning a
nozzle above the surface of a semiconducting
wafer, the semiconducting
wafer being supported adjacent to or within the interior of a chamber body; supplying a first scan fluid comprising one or more organic fluids to an inlet port of the
nozzle; directing a portion of the first scan fluid onto the surface of the semiconducting wafer to permit interaction between the scan fluid and one or more organic contaminants present on the surface of the semiconducting wafer; and removing the first scan fluid, containing at least a portion of the one or more organic contaminants, from the surface of the semiconducting wafer via the
nozzle.