41 results about "Mica substrate" patented technology

The utility model discloses a radiation heating plate and a heating appliance thereof, the radiation heating plate comprises a heating wire, a mica winding plate and a mica substrate, the heating wire is wound on the mica winding plate, all sections of the heating wire located on the same surface of the mica winding plate are mutually separated, the mica substrate is connected to one side of the mica winding plate, and the mica substrate is connected to the other side of the mica winding plate. And the heating wire is also connected with the electrode. The radiation heating plate is mainly composed of the mica sheet and the heating wire, the cost is low, the weight is light, the thickness is small, the heating wire is directly wound on the mica winding plate (mica plate), and the process is simple; moreover, the heating wires on the two sides of the mica wire winding plate are separated by the mica wire winding plate, the heating wires on the same surface of the mica wire winding plate are separated from one another, the problems that energy is concentrated and fusing is prone to occurring due to the fact that the heating wires get close to one another are solved, most heat radiated downwards is blocked by the mica substrate, and loss is reduced.

The invention belongs to the technical field of film transfer, and particularly relates to a method for transferring a two-dimensional film from a mica substrate and a pretreatment method. The acid solution and the alkali metal chlorate solution are sequentially used for treating the mica substrate, the binding force of the mica substrate to the two-dimensional film can be weakened on the basis that the two-dimensional film is not damaged, the transfer quality of the two-dimensional film is remarkably improved, material defects and lattice distortion caused by transfer are reduced, and the quality of the two-dimensional film is improved. The purpose of conveniently and efficiently transferring the high-quality two-dimensional film is achieved. The pretreatment method provided by the invention is suitable for transfer processes of different types of two-dimensional films, and has the advantages of high transfer success rate, small sample damage, low cost and high efficiency.

To provide a substrate processing method that can perform substrate processing efficiently by narrowing an array pitch of substrates.SOLUTION: A method includes: a substrate group generating process of generating a substrate group in which initial substrates are arranged at twice a particular pitch by extracting a plurality of substrates from a carrier where the substrates defined by a front surface and a back surface are arrayed at the particular pitch; a first assembling process of disposing a first substrate W1 at a first position P1; a second assembling process of disposing a second substrate W2 at a second position P2; a third assembling process of disposing a third substrate W3 at a third position P3; a fourth assembling process of disposing a fourth substrate W4 at a fourth position P4; and a fifth assembling process of disposing a fifth substrate W5 at a fifth position P5. Thus, a batch lot is generated.SELECTED DRAWING: Figure 12

This invention belongs to the field of quantum dot technology and discloses a method for preparing large-size all-inorganic CsPbI3 perovskite nanosheets. The method includes the following steps: first, large-size PbI2 nanosheets are grown on mica sheets using physical vapor deposition (PVD) with ground PbI2 powder; then, ground CsI powder and the mica substrate with deposited PbI2 nanosheets are placed in a dual-temperature zone tube furnace, and large-size all-inorganic CsPbI3 perovskite nanosheets are synthesized by controlling the system pressure and gas flow rate. The molar ratio of PbI2 to CsI is 1:1. The nanosheets prepared by this invention have controllable size, single-crystal structure, low defects, high phase purity, regular morphology, and excellent stability. The preparation process is simple and easy to operate, and can be directly applied to photodetectors, light-emitting devices, nonlinear optical devices, and other fields.

A method of bonding a smaller substrate, such as a die, to a larger substrate, such as a wafer. The method includes forming a bulge at a front side of the larger substrate by releasably securing a backside of the larger substrate to a rigid chuck, bonding the smaller substrate to the bulge at the front side of the larger substrate, and allowing the bulge to flatten by releasing the larger substrate from the rigid chuck. A variable thickness material on the backside of the larger substrate induces the bulge at the front side of the larger substrate. The method may also include forming the variable thickness material on the backside of the larger substrate. Multiple bulges may be induced at the front side of the larger substrate. Multiple smaller substrates may be bonded to a single bulge.

The utility model relates to a flower teapot which comprises a base and a glass teapot body, a teapot body bearing portion is arranged on the base, a radiation heating plate is arranged in the teapot body bearing portion, and the radiation heating plate comprises a heating wire, a mica winding plate and a mica base plate. The heating wire is wound on the mica winding plate, all sections of the heating wire located on the same surface of the mica winding plate are separated from one another, the mica substrate is connected to one side of the mica winding plate, and the width of the mica substrate is larger than that of the mica winding plate. According to the flower teapot, the radiation heating plate with the structure is introduced, compared with the prior art of the prior art, the low-temperature marginal area with a certain width is added, the temperature of the edge of the radiation heating plate can be effectively reduced, and the radiation heating plate has the advantages that the radiation heating plate and the mica wire winding plate are combined, so that the service life of the flower teapot is prolonged. The installation and fixation of the radiation heating plate are facilitated, the installation difficulty is reduced, a heat insulation space is formed between the area of the mica winding plate and the scented tea pot, and heat transferred to the scented tea pot is reduced.

The invention discloses a low-pressure two-step preparation method of a rhenium disulfide film, and belongs to the technical field of semiconductor material preparation. In the first step, rhenium powder is partially oxidized to form rhenium / rhenium heptoxide mixed powder. Secondly, rhenium / rhenium heptoxide is used as a rhenium source for rhenium disulfide growth, firstly, the active rhenium heptoxide with the high melting point and the low melting point can be dissolved to react with sulfur powder to generate rhenium disulfide molecules, and then the rhenium disulfide molecules are deposited on the mica substrate under the leading of argon to serve as nucleation points; then, high-melting-point rhenium powder begins to be dissolved under the assistance of dissolved rhenium heptoxide and is guided by argon to reach the mica substrate to continue growth of rhenium disulfide; and finally, obtaining the high-quality rhenium disulfide film on the mica substrate. The high-quality rhenium disulfide thin film synthesized on the mica substrate is expected to promote further application of the high-quality rhenium disulfide thin film in electrical devices.

The utility model discloses a thin glass sheet non-mark gluing clamp which comprises a clamp body, the clamp body comprises a base plate, vacuum adsorption holes and edge blocking columns, a plurality of circles of vacuum adsorption holes are evenly formed in the base plate along the circumference, and a circle of edge blocking columns are evenly arranged on the outer edge of the base plate along the circumference. The multiple circles of vacuum adsorption holes are correspondingly matched with a vacuum channel in the spin-coating disc, and the positions of the edge blocking columns are correspondingly matched with thin glass sheets to be machined. The special clamp is combined with the spin-coating disc on a machine table, the vacuum channel on the spin-coating disc adsorbs a glass substrate through the small holes in the chassis, suction force is greatly reduced, deformation of a thin glass sheet when the thin glass sheet is adsorbed is avoided, and the edge blocking columns effectively solve the problem that the substrate is thrown out when the substrate rotates due to the fact that the suction force is too small. By using the clamp, the problem of spin-coating disc printing during gluing of the thin glass sheet is effectively solved, and the product gluing yield is improved.

The invention relates to a construction strategy and a preparation method of phosphorus-containing epoxy resin for a mica plate of a new energy automobile, and belongs to the technical field of preparation of halogen-free flame-retardant high polymer materials. According to the material, basic epoxy resin, a phosphorus-containing flame retardant DOPO (9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide) and 1, 4-naphthoquinone are used as basic raw materials, a reaction type phosphaphenanthrene-containing compound is obtained in a staged reaction mode, and then the reaction type phosphaphenanthrene-containing compound and epoxy resin are synthesized into the phosphorus-containing epoxy resin under the action of a catalyst. The preparation method comprises the following steps: adding middle-high molecular weight epoxy to regulate and control the molecular weight and distribution, and finally dissolving the obtained phosphorus-containing epoxy resin in a proper solvent to prepare a stable phosphorus-containing epoxy resin solution. The phosphorus-containing epoxy resin has the core advantages that the molecular structure and molecular weight distribution of a product are effectively regulated and controlled through formula design and segmented reaction control, and the prepared phosphorus-containing epoxy resin not only has high heat resistance and high flame retardancy, but also keeps good mechanical strength and low moisture absorption rate, and is suitable for industrial production. And good wettability and bonding performance with a mica base material are shown. The material is suitable for the field of new energy automobile mica plates with extremely high requirements on safety and reliability, and has a good application prospect.

The invention discloses a potassium tungsten bronze nanosheet and a preparation method thereof.The preparation method comprises the steps that mixed powder containing a tungsten source is placed in a porcelain boat, then a fluorine crystal mica substrate is placed above the mixed powder containing the tungsten source, and the distance gt between the mixed powder containing the tungsten source and the fluorine crystal mica substrate is controlled; then, the mixture is placed in a heating furnace, chemical vapor deposition reaction is carried out under the protective atmosphere, and the potassium tungsten bronze nanosheet of a single-crystal structure is obtained on the surface of the fluorine crystal mica substrate; the method solves the problem that a traditional method is difficult to control structural phases and electrical properties, has the advantages of low synthesis temperature, high product quality, strong phase selectivity and the like, and can be widely applied to the fields of micro-nano electronic devices and functional materials.

This invention provides a method for preparing a mica insulating sheet for lithium-ion batteries without an aluminum metal layer, relating to the technical field of electrical insulation materials and insulating component molding / manufacturing processes. The method includes: S1. providing a sheet-like mica substrate and preparing an organosilicon resin bonding system for impregnation; simultaneously preparing a ceramic barrier slurry for surface layering, wherein the ceramic barrier slurry includes silica sol, zirconium oxide sol, and titanium dioxide. This method for preparing a mica insulating sheet for lithium-ion batteries without an aluminum metal layer utilizes a ceramic barrier system constructed from Si sol + Zr sol + titanium dioxide, avoiding the existing technology's reliance on an aluminum reflective layer in the process path. This allows the lithium-ion battery insulating material to meet heat resistance and insulation requirements while achieving aluminum-free insulation, improving its application compatibility between cells and between cells and the casing.

The application discloses a potassium tungsten bronze nanosheet and a preparation method thereof. A mixed powder containing a tungsten source is placed in a porcelain boat, then a fluorine crystal mica substrate is placed above the mixed powder containing the tungsten source, the distance between the mixed powder containing the tungsten source and the fluorine crystal mica substrate is controlled to be greater than 4 mm, then the porcelain boat is placed in a heating furnace, and a chemical vapor deposition reaction is carried out under a protective atmosphere, so that the potassium tungsten bronze nanosheet with a single crystal structure is obtained on the surface of the fluorine crystal mica substrate. The application solves the problem that the structure phase and the electrical characteristics are difficult to control by using a traditional method, has the advantages of low synthesis temperature, high product quality, strong phase selectivity and the like, and can be widely applied to the fields of micro-nano electronic devices and functional materials.

The invention discloses a method for growing CuCrS2 on an amorphous silicon dioxide substrate. According to the method, the CuCrS2 two-dimensional material is directly grown on the SiO2 substrate in situ, the CuCrS2 material is tightly combined with the silicon wafer, and the stability is good. Therefore, the operation can be directly carried out on the silicon wafer during the subsequent device preparation, the material transfer step required in the subsequent device preparation and rear-end integration when the mica substrate is used for generating the CuCrS2 material is reduced, the production time is shortened, the production cost is reduced, and the production efficiency is improved; and meanwhile, the compatibility of the CuCrS2 material and a CMOS (Complementary Metal Oxide Semiconductor) device is obviously improved.

The present invention relates to a cerium hafnium oxide (Hf) with zirconium oxide (ZrO2) intercalation layer. 1‑x Ce x O2 film, preparation method and application, the method comprising: preparing Hf 1‑x Ce x O2 (HCO) sol and ZrO2 sol; spin coating the HCO sol and ZrO2 sol on a substrate in different orders to obtain a wet film; pyrolyzing the wet film and finally annealing and crystallizing it to obtain a cerium hafnium oxide Hf with a zirconium oxide intercalation layer. 1‑x Ce x O2 film. The present invention introduces a high dielectric ZrO2 intercalation layer into the HCO film and adjusts the intercalation position to obtain high-performance films with different ZrO2-HCO stacks. Compared with the prior art, the ferroelectric properties and / or leakage properties of the film prepared on the heavily doped Si substrate are significantly improved; on the flexible mica substrate, the addition of the ZrO2 intercalation layer can also significantly improve the ferroelectric properties of the film; and the preparation method of the present invention is simple, the content of the added elements is flexible and controllable, the success rate of the film preparation is high, the repeatability is good, and it is suitable for mass production.

The invention provides a manufacturing method of a 3D stack structure, and the method comprises the steps: carrying out the surface planarization processing of an SPM solution and the surface activation processing of an NaOH solution on a to-be-bonded surface of a TGV substrate when the bonding of the TGV substrate is carried out, and enabling the surface roughness of the to-be-bonded surface of the TGV substrate to be reduced through the surface planarization processing of the SPM solution, enabling the to-be-bonded surface to be leveled, and enabling the to-be-bonded surface to be smooth. Through the surface activation treatment of the NaOH solution, the to-be-bonded surface of the TGV substrate can be hydroxylated to have hydrophilicity under the condition that the surface roughness of the TGV substrate is not influenced, so that after DI water bonding and annealing, holes of a 3D stack structure can be effectively reduced, and the reliability is improved.

The invention belongs to the technical field of chemical vapor deposition, and particularly discloses a preparation method of iron-based tungstate based on chemical vapor deposition, which comprises the following steps: S1, precursor pretreatment: mixing FeCl2 and WO3 in proportion; s2, substrate pretreatment: cleaning a mica sheet, blow-drying the mica sheet with nitrogen, and then fixing the mica sheet in a chemical vapor deposition reaction chamber; s3, reaction chamber atmosphere replacement: argon is introduced for purging; s4, heating and reacting: adjusting the argon flow and the hydrogen flow, heating to 550-700 DEG C, and reacting for 5-20 minutes at a constant temperature; and S5, cooling and collecting: keeping the argon atmosphere, cooling to room temperature, and obtaining the FeWO4 nanosheet on the mica substrate. According to the preparation method of the iron-based tungstate based on the chemical vapor deposition, introduction of impurities in the synthesis process is avoided, and synthesis of high-crystallinity FeWO4 and accurate design of the FeWO4 nanosheet morphology are achieved.

The application discloses a glass substrate and a manufacturing method thereof, and relates to the technical field of semiconductor packaging. The manufacturing method of the glass substrate comprises the following steps: glass core plate opening, first seed layer forming, first mask forming, through hole metalization, first mask and first seed layer covered by the first mask removing, hole plugging and first resin layer forming, second seed layer forming, second mask forming, inner circuit layer forming, second mask and second seed layer covered by the second mask removing, second resin layer forming, through holes being opened on the second resin layers of the first surface and the second surface, third seed layer forming, third mask forming, circuit layer forming, third mask and third seed layer covered by the third mask removing, repeating the steps of forming the second resin layer to the step of removing the third mask and the third seed layer covered by the third mask at least once, resist layer making, and ball planting, so as to reduce the warping of the substrate and improve the reliability of the substrate.

A battery pack is provided. The battery pack includes at least one battery cell including a cathode, an anode, and an electrolyte that transports charged ions between the anode and the cathode. The battery pack includes a thermal barrier within the battery pack for shielding the at least one battery cell from thermal exposure. The thermal barrier includes a mica substrate, a first coating layer disposed on a first side of the mica substrate, and a second coating layer disposed on a second side of the mica substrate. The second side is distal from the first side. The first coating layer and the second coating layer is formed of aluminum tri hydroxide (ATH).

The invention discloses a method for preparing a rhenium disulfide film, and belongs to the technical field of semiconductor material preparation. The method comprises the following steps: firstly, fusing rhenium heptoxide into molten soda-lime glass to serve as a rhenium source; then under the catalysis of sodium ions, sulfur powder and rhenium oxide react in the molten state soda-lime glass to generate rhenium disulfide, then the rhenium disulfide is diffused to the surface of the molten state glass, and finally under the driving of carrier gas, the rhenium disulfide is deposited on a mica substrate above the molten state glass to form a continuous film. The high-quality rhenium disulfide thin film synthesized on the mica substrate is expected to promote further application of the high-quality rhenium disulfide thin film in electrical devices.

The invention relates to the technical field of surface acoustic wave devices, in particular to a flexible surface acoustic wave device based on a wet transfer aluminum nitride film and a preparation method thereof, which specifically adopts a wet transfer technology to transfer a high-quality aluminum nitride (AlN) piezoelectric film from a growth substrate to a flexible mica substrate, and solves the interface stress problem by introducing a buffer layer (such as SrTiO3). And a transferred AlN thin film is integrated on the buffer layer. According to the method, the problem of lattice mismatch during direct growth of the AlN film is avoided, and meanwhile, the excellent piezoelectric property of the AlN film is reserved. In addition, the device prepared by the invention has the advantages of flexibility, high temperature resistance, high performance and the like, and is suitable for application scenes of wearable equipment, high-temperature sensors and the like.

The present application relates to a kind of barium nickel niobate-potassium niobate ferroelectric film material and its preparation method and application, the barium nickel niobate-potassium niobate ferroelectric film material includes substrate, bottom electrode layer, film layer and transparent top electrode layer from bottom to top sequentially arranged;The substrate is inorganic mica substrate;The film layer is barium nickel niobate-potassium niobate, and the chemical composition is [KNbO3] 0.9 [BaNi 1 / 2 Nb 1 / 2 O3] 0.1 , preparation method is sol-gel method.Compared with prior art, the preparation method of the present application is economical and environmental protection, preparation process is simple, and the barium nickel niobate-potassium niobate ferroelectric film material prepared is brand-new flexible all-inorganic film, can realize stable light response output, and is expected to realize application in photovoltaic device field.

The application relates to the technical field of inorganic semiconductors, in particular to a two-dimensional layered-non-layered van der Waals heterostructure and a preparation method and application thereof. The preparation method of the two-dimensional layered-non-layered van der Waals heterostructure provided by the application comprises the following steps: a layered molybdenum disulfide nanosheet is prepared on a substrate by using a mechanical stripping method or a gas phase deposition method; a non-layered lead selenide nanosheet is prepared on a mica substrate by using a gas phase deposition method; polymethyl methacrylate is suspended and coated on the mica substrate and heated to form a polymethyl methacrylate supporting film; the mica substrate is removed, and the lead selenide nanosheet is adhered to the polymethyl methacrylate supporting film; the lead selenide nanosheet is placed on the molybdenum disulfide nanosheet, and the polymethyl methacrylate supporting film is dissolved by using an organic solvent, so that the two-dimensional layered-non-layered van der Waals heterostructure is obtained.

A method of bonding a smaller substrate, such as a die, to a larger substrate, such as a wafer. The method includes forming a bulge at a front side of the larger substrate by releasably securing a backside of the larger substrate to a rigid chuck, bonding the smaller substrate to the bulge at the front side of the larger substrate, and allowing the bulge to flatten by releasing the larger substrate from the rigid chuck A variable thickness material on the backside of the larger substrate induces the bulge at the front side of the larger substrate. The method may also include forming the variable thickness material on the backside of the larger substrate. Multiple bulges may be induced at the front side of the larger substrate. Multiple smaller substrates may be bonded to a single bulge.

The invention discloses a catalytic combustion type hydrogen sensor capable of realizing self-calibration based on pulse heating and a preparation method of the catalytic combustion type hydrogen sensor. The sensor comprises a mica sheet substrate, a platinum resistor, an aluminum oxide insulating layer, a palladium nanoparticle catalytic layer, a pulse driving unit and a data processing module. According to the sensor, through periodic multi-stage pulse excitation, a reference model between resistance increment and voltage is firstly constructed by two low-voltage pulses, then catalytic combustion reaction is excited by high-voltage pulses, actual resistance is collected, hydrogen response signals are extracted in a differential mode, and quantitative measurement of hydrogen concentration is achieved in combination with a calibration curve. The platinum resistor has a good linear thermal response characteristic, power consumption is remarkably reduced through a pulse driving mode, and high-precision hydrogen detection without a compensation element is achieved. The method has the advantages of simple structure, low power consumption, high sensitivity, strong environmental adaptability and the like, and is suitable for hydrogen leakage monitoring in a complex industrial or energy environment.

A method of making a transmission electron microscope (TEM) grid covered with a single layer of graphene oxide (GO) includes immersing a dispersed single layer of graphene oxide material in an aqueous solution. And dripping the graphene oxide dispersion liquid on the fluorine rocket mica substrate, and drying at room temperature. And finally, transferring the single-layer graphene oxide on the turbidimetric fluorine mica substrate to a transmission electron microscope grid by using a wet transfer method. According to the method, the defects of aggregation, multi-layer superposition, wrinkling and the like of the graphene oxide are avoided, the preparation process is simple and easy to operate, and the transmission electron microscope grid covered by the graphene oxide has the function of supporting measurement of a monatomic transmission electron microscope.

This invention discloses a method for controlling the phases of a Bi-Te-O ternary system, belonging to the field of two-dimensional semiconductor material preparation technology. Using Bi₂Te₃ and Bi₂O₃ powders as reaction sources, controllable growth is achieved on a mica substrate using CVD. By adjusting the growth temperature and system pressure to construct a pressure-temperature synergistic phase diagram, the growth windows for four different phases—elemental Te, Bi₂Te₃, Bi₂TeO₅, and Bi₂O₂Te—were determined and controlled. By utilizing the modulation of the vapor pressure and chemical potential of the precursors by temperature and pressure, the problem of low phase purity caused by differences in precursor reaction concentration and activity in the ternary system is solved, successfully preparing ultrathin two-dimensional Bi₂TeO₅ crystals with a thickness of 3.0–5.7 nm. The preparation method provided by this invention is simple and highly controllable, offering a new technological paradigm for the large-scale and precise preparation of complex ternary two-dimensional systems.

The invention discloses a method for preparing a rhenium disulfide film in two steps, and belongs to the technical field of semiconductor material preparation. In the first step, rhenium heptoxide is fused into molten soda-lime glass to serve as a rhenium source. 2, under the catalysis of sodium ions, sulfur powder and rhenium heptoxide react in the molten soda-lime glass to generate rhenium disulfide, the rhenium disulfide is diffused to the surface of the molten glass, and finally, under the driving of carrier gas, the rhenium disulfide is deposited on a mica substrate above to form a continuous film. The high-quality rhenium disulfide thin film synthesized on the mica substrate is expected to promote further application of the high-quality rhenium disulfide thin film in electrical devices.

This invention belongs to the field of chip packaging technology, specifically, a method for fabricating a small substrate. The steps are as follows: A small substrate is placed on a first substrate through a first release layer. A molding compound is used to wrap the small substrate and fill the gaps between it on the first release layer, forming a molding compound layer. Multiple vias are formed in the molding compound layer to expose partial surfaces of the small substrate. Bumps are fabricated on the vias. A second temporary carrier is temporarily bonded to the bumps. The first release layer is debonded, exposing the bottom of the small substrate. RDL lines are fabricated on the exposed bottom of the small substrate. A passivation layer and pads are fabricated on the RDL lines. Then, the second temporary carrier is debonded, exposing the bumps. The remaining structure is cut to separate units containing a single small substrate or units containing multiple small substrates. The small substrate fabrication method proposed in this invention can effectively improve overall integration and reliability.

The invention relates to the technical field of thermoelectric materials, in particular to a two-dimensional thermoelectric AgSbSe2 crystal and a preparation method thereof. The preparation method of the two-dimensional thermoelectric AgSbSe2 crystal comprises the following steps: mixing AgI powder and Sb powder to obtain a mixed precursor, and placing the mixed precursor on a fluxing salt matrix layer; the mica substrate subjected to plasma cleaning is reversely buckled above the mixed precursor, a gap is formed between the mica substrate and the mixed precursor, and then the mica substrate and the mixed precursor are placed in a central constant-temperature area of a single-temperature-area horizontal tube furnace; the method comprises the following steps: introducing argon-hydrogen mixed gas as carrier gas into a single-temperature-zone horizontal tube furnace, and heating a furnace body to a target temperature to obtain Ag source steam and Sb source steam; the porcelain boat with the Se powder is pushed into an upstream low-temperature area to evaporate the Se source, and Se source steam is obtained; the evaporated Se source is conveyed to the surface of the mica substrate through the argon-hydrogen mixed gas and reacts with the Ag source steam and the Sb source steam, and the two-dimensional thermoelectric AgSbSe2 crystal is generated on the mica substrate.

This invention discloses a method for structural control of two-dimensional bismuth-based perovskite materials grown by CVD. By precisely controlling the mass transfer process of the precursor, single-crystal bismuth-based perovskite materials with a thickness ≤10nm and a lateral dimension ≥500μm are obtained, solving the problems of small single-crystal size and uncontrollable thickness of two-dimensional bismuth-based perovskite materials prepared by existing methods. The method includes the following steps: placing two precursor materials in two temperature zones of a dual-temperature zone tube furnace, using a mica substrate, introducing argon and hydrogen into the tube furnace, and heating the two temperature zones of the tube furnace to predetermined temperatures to allow the reaction to proceed, thereby obtaining large-size two-dimensional bismuth-based perovskite materials. The preparation process involved in this invention is simple, convenient to operate, and has good repeatability. By changing the temperature and carrier gas flow rate of the two temperature zones of the tube furnace, the thickness and morphology of the two-dimensional bismuth-based perovskite material can be controlled.