19 results about "Mica substrate" patented technology

This invention belongs to the field of quantum dot technology and discloses a method for preparing large-size all-inorganic CsPbI3 perovskite nanosheets. The method includes the following steps: first, large-size PbI2 nanosheets are grown on mica sheets using physical vapor deposition (PVD) with ground PbI2 powder; then, ground CsI powder and the mica substrate with deposited PbI2 nanosheets are placed in a dual-temperature zone tube furnace, and large-size all-inorganic CsPbI3 perovskite nanosheets are synthesized by controlling the system pressure and gas flow rate. The molar ratio of PbI2 to CsI is 1:1. The nanosheets prepared by this invention have controllable size, single-crystal structure, low defects, high phase purity, regular morphology, and excellent stability. The preparation process is simple and easy to operate, and can be directly applied to photodetectors, light-emitting devices, nonlinear optical devices, and other fields.

A method of bonding a smaller substrate, such as a die, to a larger substrate, such as a wafer. The method includes forming a bulge at a front side of the larger substrate by releasably securing a backside of the larger substrate to a rigid chuck, bonding the smaller substrate to the bulge at the front side of the larger substrate, and allowing the bulge to flatten by releasing the larger substrate from the rigid chuck. A variable thickness material on the backside of the larger substrate induces the bulge at the front side of the larger substrate. The method may also include forming the variable thickness material on the backside of the larger substrate. Multiple bulges may be induced at the front side of the larger substrate. Multiple smaller substrates may be bonded to a single bulge.

The invention relates to a construction strategy and a preparation method of phosphorus-containing epoxy resin for a mica plate of a new energy automobile, and belongs to the technical field of preparation of halogen-free flame-retardant high polymer materials. According to the material, basic epoxy resin, a phosphorus-containing flame retardant DOPO (9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide) and 1, 4-naphthoquinone are used as basic raw materials, a reaction type phosphaphenanthrene-containing compound is obtained in a staged reaction mode, and then the reaction type phosphaphenanthrene-containing compound and epoxy resin are synthesized into the phosphorus-containing epoxy resin under the action of a catalyst. The preparation method comprises the following steps: adding middle-high molecular weight epoxy to regulate and control the molecular weight and distribution, and finally dissolving the obtained phosphorus-containing epoxy resin in a proper solvent to prepare a stable phosphorus-containing epoxy resin solution. The phosphorus-containing epoxy resin has the core advantages that the molecular structure and molecular weight distribution of a product are effectively regulated and controlled through formula design and segmented reaction control, and the prepared phosphorus-containing epoxy resin not only has high heat resistance and high flame retardancy, but also keeps good mechanical strength and low moisture absorption rate, and is suitable for industrial production. And good wettability and bonding performance with a mica base material are shown. The material is suitable for the field of new energy automobile mica plates with extremely high requirements on safety and reliability, and has a good application prospect.

This invention provides a method for preparing a mica insulating sheet for lithium-ion batteries without an aluminum metal layer, relating to the technical field of electrical insulation materials and insulating component molding / manufacturing processes. The method includes: S1. providing a sheet-like mica substrate and preparing an organosilicon resin bonding system for impregnation; simultaneously preparing a ceramic barrier slurry for surface layering, wherein the ceramic barrier slurry includes silica sol, zirconium oxide sol, and titanium dioxide. This method for preparing a mica insulating sheet for lithium-ion batteries without an aluminum metal layer utilizes a ceramic barrier system constructed from Si sol + Zr sol + titanium dioxide, avoiding the existing technology's reliance on an aluminum reflective layer in the process path. This allows the lithium-ion battery insulating material to meet heat resistance and insulation requirements while achieving aluminum-free insulation, improving its application compatibility between cells and between cells and the casing.

The invention provides a manufacturing method of a 3D stack structure, and the method comprises the steps: carrying out the surface planarization processing of an SPM solution and the surface activation processing of an NaOH solution on a to-be-bonded surface of a TGV substrate when the bonding of the TGV substrate is carried out, and enabling the surface roughness of the to-be-bonded surface of the TGV substrate to be reduced through the surface planarization processing of the SPM solution, enabling the to-be-bonded surface to be leveled, and enabling the to-be-bonded surface to be smooth. Through the surface activation treatment of the NaOH solution, the to-be-bonded surface of the TGV substrate can be hydroxylated to have hydrophilicity under the condition that the surface roughness of the TGV substrate is not influenced, so that after DI water bonding and annealing, holes of a 3D stack structure can be effectively reduced, and the reliability is improved.

The invention belongs to the technical field of chemical vapor deposition, and particularly discloses a preparation method of iron-based tungstate based on chemical vapor deposition, which comprises the following steps: S1, precursor pretreatment: mixing FeCl2 and WO3 in proportion; s2, substrate pretreatment: cleaning a mica sheet, blow-drying the mica sheet with nitrogen, and then fixing the mica sheet in a chemical vapor deposition reaction chamber; s3, reaction chamber atmosphere replacement: argon is introduced for purging; s4, heating and reacting: adjusting the argon flow and the hydrogen flow, heating to 550-700 DEG C, and reacting for 5-20 minutes at a constant temperature; and S5, cooling and collecting: keeping the argon atmosphere, cooling to room temperature, and obtaining the FeWO4 nanosheet on the mica substrate. According to the preparation method of the iron-based tungstate based on the chemical vapor deposition, introduction of impurities in the synthesis process is avoided, and synthesis of high-crystallinity FeWO4 and accurate design of the FeWO4 nanosheet morphology are achieved.

The application discloses a glass substrate and a manufacturing method thereof, and relates to the technical field of semiconductor packaging. The manufacturing method of the glass substrate comprises the following steps: glass core plate opening, first seed layer forming, first mask forming, through hole metalization, first mask and first seed layer covered by the first mask removing, hole plugging and first resin layer forming, second seed layer forming, second mask forming, inner circuit layer forming, second mask and second seed layer covered by the second mask removing, second resin layer forming, through holes being opened on the second resin layers of the first surface and the second surface, third seed layer forming, third mask forming, circuit layer forming, third mask and third seed layer covered by the third mask removing, repeating the steps of forming the second resin layer to the step of removing the third mask and the third seed layer covered by the third mask at least once, resist layer making, and ball planting, so as to reduce the warping of the substrate and improve the reliability of the substrate.

A battery pack is provided. The battery pack includes at least one battery cell including a cathode, an anode, and an electrolyte that transports charged ions between the anode and the cathode. The battery pack includes a thermal barrier within the battery pack for shielding the at least one battery cell from thermal exposure. The thermal barrier includes a mica substrate, a first coating layer disposed on a first side of the mica substrate, and a second coating layer disposed on a second side of the mica substrate. The second side is distal from the first side. The first coating layer and the second coating layer is formed of aluminum tri hydroxide (ATH).

The present application relates to a kind of barium nickel niobate-potassium niobate ferroelectric film material and its preparation method and application, the barium nickel niobate-potassium niobate ferroelectric film material includes substrate, bottom electrode layer, film layer and transparent top electrode layer from bottom to top sequentially arranged;The substrate is inorganic mica substrate;The film layer is barium nickel niobate-potassium niobate, and the chemical composition is [KNbO3] 0.9 [BaNi 1 / 2 Nb 1 / 2 O3] 0.1 , preparation method is sol-gel method.Compared with prior art, the preparation method of the present application is economical and environmental protection, preparation process is simple, and the barium nickel niobate-potassium niobate ferroelectric film material prepared is brand-new flexible all-inorganic film, can realize stable light response output, and is expected to realize application in photovoltaic device field.

A method of bonding a smaller substrate, such as a die, to a larger substrate, such as a wafer. The method includes forming a bulge at a front side of the larger substrate by releasably securing a backside of the larger substrate to a rigid chuck, bonding the smaller substrate to the bulge at the front side of the larger substrate, and allowing the bulge to flatten by releasing the larger substrate from the rigid chuck A variable thickness material on the backside of the larger substrate induces the bulge at the front side of the larger substrate. The method may also include forming the variable thickness material on the backside of the larger substrate. Multiple bulges may be induced at the front side of the larger substrate. Multiple smaller substrates may be bonded to a single bulge.

A method of making a transmission electron microscope (TEM) grid covered with a single layer of graphene oxide (GO) includes immersing a dispersed single layer of graphene oxide material in an aqueous solution. And dripping the graphene oxide dispersion liquid on the fluorine rocket mica substrate, and drying at room temperature. And finally, transferring the single-layer graphene oxide on the turbidimetric fluorine mica substrate to a transmission electron microscope grid by using a wet transfer method. According to the method, the defects of aggregation, multi-layer superposition, wrinkling and the like of the graphene oxide are avoided, the preparation process is simple and easy to operate, and the transmission electron microscope grid covered by the graphene oxide has the function of supporting measurement of a monatomic transmission electron microscope.

This invention discloses a method for controlling the phases of a Bi-Te-O ternary system, belonging to the field of two-dimensional semiconductor material preparation technology. Using Bi₂Te₃ and Bi₂O₃ powders as reaction sources, controllable growth is achieved on a mica substrate using CVD. By adjusting the growth temperature and system pressure to construct a pressure-temperature synergistic phase diagram, the growth windows for four different phases—elemental Te, Bi₂Te₃, Bi₂TeO₅, and Bi₂O₂Te—were determined and controlled. By utilizing the modulation of the vapor pressure and chemical potential of the precursors by temperature and pressure, the problem of low phase purity caused by differences in precursor reaction concentration and activity in the ternary system is solved, successfully preparing ultrathin two-dimensional Bi₂TeO₅ crystals with a thickness of 3.0–5.7 nm. The preparation method provided by this invention is simple and highly controllable, offering a new technological paradigm for the large-scale and precise preparation of complex ternary two-dimensional systems.

This invention belongs to the field of chip packaging technology, specifically, a method for fabricating a small substrate. The steps are as follows: A small substrate is placed on a first substrate through a first release layer. A molding compound is used to wrap the small substrate and fill the gaps between it on the first release layer, forming a molding compound layer. Multiple vias are formed in the molding compound layer to expose partial surfaces of the small substrate. Bumps are fabricated on the vias. A second temporary carrier is temporarily bonded to the bumps. The first release layer is debonded, exposing the bottom of the small substrate. RDL lines are fabricated on the exposed bottom of the small substrate. A passivation layer and pads are fabricated on the RDL lines. Then, the second temporary carrier is debonded, exposing the bumps. The remaining structure is cut to separate units containing a single small substrate or units containing multiple small substrates. The small substrate fabrication method proposed in this invention can effectively improve overall integration and reliability.

The invention relates to the technical field of thermoelectric materials, in particular to a two-dimensional thermoelectric AgSbSe2 crystal and a preparation method thereof. The preparation method of the two-dimensional thermoelectric AgSbSe2 crystal comprises the following steps: mixing AgI powder and Sb powder to obtain a mixed precursor, and placing the mixed precursor on a fluxing salt matrix layer; the mica substrate subjected to plasma cleaning is reversely buckled above the mixed precursor, a gap is formed between the mica substrate and the mixed precursor, and then the mica substrate and the mixed precursor are placed in a central constant-temperature area of a single-temperature-area horizontal tube furnace; the method comprises the following steps: introducing argon-hydrogen mixed gas as carrier gas into a single-temperature-zone horizontal tube furnace, and heating a furnace body to a target temperature to obtain Ag source steam and Sb source steam; the porcelain boat with the Se powder is pushed into an upstream low-temperature area to evaporate the Se source, and Se source steam is obtained; the evaporated Se source is conveyed to the surface of the mica substrate through the argon-hydrogen mixed gas and reacts with the Ag source steam and the Sb source steam, and the two-dimensional thermoelectric AgSbSe2 crystal is generated on the mica substrate.

This invention discloses a method for structural control of two-dimensional bismuth-based perovskite materials grown by CVD. By precisely controlling the mass transfer process of the precursor, single-crystal bismuth-based perovskite materials with a thickness ≤10nm and a lateral dimension ≥500μm are obtained, solving the problems of small single-crystal size and uncontrollable thickness of two-dimensional bismuth-based perovskite materials prepared by existing methods. The method includes the following steps: placing two precursor materials in two temperature zones of a dual-temperature zone tube furnace, using a mica substrate, introducing argon and hydrogen into the tube furnace, and heating the two temperature zones of the tube furnace to predetermined temperatures to allow the reaction to proceed, thereby obtaining large-size two-dimensional bismuth-based perovskite materials. The preparation process involved in this invention is simple, convenient to operate, and has good repeatability. By changing the temperature and carrier gas flow rate of the two temperature zones of the tube furnace, the thickness and morphology of the two-dimensional bismuth-based perovskite material can be controlled.

The invention belongs to the technical field of chip packaging, and particularly belongs to a preparation method of a small substrate. The method comprises the following steps: placing small substrates on a first substrate through a first release layer, wrapping the small substrates on the first release layer and filling gaps between the small substrates with a molding compound to form a plastic package layer, forming a plurality of through holes in the plastic package layer to expose local surfaces of the small substrates, manufacturing salient points on the through holes, temporarily bonding a second temporary carrier plate on the salient points, and forming a second temporary carrier plate on the second temporary carrier plate. The method comprises the following steps of: bonding a first temporary carrier plate, exposing a plurality of small substrates, debonding the first release layer, exposing the bottoms of the small substrates, manufacturing an RDL (Reactive Downlink Line) on the exposed bottoms of the small substrates, manufacturing a passivation layer and a bonding pad on the RDL, then debonding a second temporary carrier plate, exposing salient points, cutting the residual structure, and separating a unit comprising a single small substrate or a unit comprising a plurality of small substrates. The small substrate preparation method provided by the invention can effectively improve the overall integration level and reliability.

The invention discloses a flexible high-orientation PZT film based on a composite seed crystal layer and a preparation method of the flexible high-orientation PZT film, and belongs to the technical field of electronic materials. The flexible high-orientation PZT thin film is prepared by the following steps: mixing PbO sol and TiO2 sol to obtain composite seed crystal sol, and depositing the composite seed crystal sol on a substrate to form a substrate containing a composite seed crystal layer; growing a PZT film on the composite seed crystal layer to form a composite structure body; the substrate in the composite structure body is thinned; the substrate is a mica substrate, and the thickness of the substrate is 50-500 [mu] m. The flexible PZT film is successfully prepared by using the mica substrate with a certain thickness and combining with thinning treatment, the highly preferred orientation of the PZT film can be controllably realized by further accurately regulating and controlling the component proportion of the composite seed crystal layer, and the prepared flexible PZT film is compact in microstructure, grows in a columnar crystal form, and has a good application prospect. And the material has a high piezoelectric coefficient and excellent mechanical flexibility and anti-fatigue performance, and has a wide application prospect in flexible sensors and wearable electronic devices.

The invention discloses a two-dimensional antiferromagnetic material and a preparation method and application thereof, and the method comprises the following steps: adopting Mn and Te elementary substance powder, taking I2 as a transportation agent, and synthesizing a blocky MnTe precursor through a vacuum chemical vapor transport method under a vacuum sealing condition; the preparation method comprises the following steps: mixing a ground MnTe precursor with In elementary substance powder and fluxing agent KCl powder, carrying out fluxing reaction in a vertical confinement space constrained by a constant normal pressure and in an inert atmosphere, and inducing the crystal to epitaxially grow along the horizontal direction, thereby forming a two-dimensional Mn (InTe2) 2 crystal on a fluorine crystal mica substrate, and carrying out wet transfer to obtain the two-dimensional Mn (InTe2) 2 crystal on a SiO2 / Si substrate, according to the method, the two-dimensional Mn (InTe2) 2 crystal with the antiferromagnetic characteristic is prepared through a step-by-step precursor induction type confinement pressure melting epitaxial method, and the method is simple in process and high in repeatability; the two-dimensional Mn (InTe2) 2 crystal has the characteristics of good crystal quality, large transverse size, controllable layer number and the like, and can be applied to a high-density magnetic storage device.

The application provides an ion gel electrolyte gate-controlled perovskite microwire synapse transistor and a preparation method. The structure of the artificial synapse device from bottom to top comprises: a mica substrate which is processed by cleavage and has a smooth surface; a one-dimensional single-crystal perovskite microwire which is used as an electronic transmission channel of the device; metal electrodes which are connected to both sides of the perovskite microwire and are used for connecting an external power supply; and an ion gel electrolyte which is used as a gate dielectric layer and covers the perovskite microwire channel and the metal electrodes. Compared with the prior art, the preparation process of the application is simple, and channel material transfer is not needed. By directly coating the ion gel electrolyte on the flexible mica substrate with the perovskite microwire, a double electric layer structure between the perovskite and the electrode can be formed, and the simulation of the biological synapse behavior of the perovskite three-terminal artificial synapse device on the flexible substrate can be directly realized. The application is expected to become a core driving force for the development of neuromorphic computing, artificial intelligence hardware and flexible electronics, and to provide key empowerment for the innovation of related technologies.