119 results about "Mica substrate" patented technology

A first electrode layer 14 is formed on a mica substrate 54, and then first scribe portions 64 are disposed. Next, a light absorbing layer 16 and a buffer layer 18 are disposed on the first electrode layer 14, and through holes (second scribe portions 66) which penetrate from the upper end face of the buffer layer 18 to the lower end face of the mica substrate 54 are formed in a spot-like manner. Then, a second electrode layer 20 is disposed on the buffer layer 18. At this time, the lower end face of the second electrode layer 20 reaches the first electrode layer 14 along the inner peripheral walls of the second scribe portions 66. Furthermore, the second electrode layer 20 is scribed to dispose third scribe portions 70.

The invention discloses a high-mobility-ratio lamellar Bi2O2Se semiconductor film and a preparation method thereof. The method for preparing the high-mobility-ratio lamellar Bi2O2Se semiconductor film includes the steps that Bi2O3 powder and Bi2Se3 blocks serve as raw materials; chemical vapor deposition is carried out on a mica substrate; and after chemical vapor deposition, the lamellar Bi2O2Se semiconductor film is obtained. The method is economical, simple and feasible. The obtained film is large in area, continuous and high in mobility ratio and has broad application prospects.

The invention discloses a method for preparing gold pearlescent pigment with high hue and high brightness, which comprises the following processes: coating multiple layers of iron and titanium oxide thin films on a substrate which is synthetic mica with a particle size of 10 to 60 micrometers or 10 to 100 micrometers in turn by using a hydrolysis process; and calcining the mica substrate coated with the films at a set temperature to convert the crystal form of the films by dehydration, so that the predesigned film interference effect is achieved. The gold pearlescent pigment manufactured by the method has the gold like metal luster lacking in common gold pigments, the metal luster of the gold pearlescent pigment can be as high as that of metal pigments such as copper gold powder and can realize high shielding performance, and when used in coating, the gold pearlescent pigment can produce a strong gold effect. Meanwhile, the gold pearlescent pigment has high temperature resistance, high chemical stability and high weather resistance.

A thick film, large area resistance heater including a substrate having an electrically non-conductive surface on which is deposited a film electrical resistor such as a thermally sprayed, photo resist etched foil or sol-gel graphite based material. A combination of an electrically conductive film coated backer board substrate composed of portland cement, sand, cellulose fibers and other selected additives. A mica substrate heater can be cemented to a cement backer board or a vinyl with adhesive backing.

The invention discloses a method for low-cost preparation of large-size monocrystal graphene, relates to a preparation method of monocrystal graphene, and is used for solving the technical problems that in the chemical vapor deposition (CVD) method for preparing the large-size monocrystal graphene material, the common monocrystal substrate surface treatment process is complex, and the monocrystal substrate is difficult to reuse and high in cost. The method disclosed by the invention comprises the following steps of: I, evaporating a monocrystal metal thin film on a monocrystal mica substrate; II, placing the monocrystal metal thin film obtained from the step I into chemical vapor deposition equipment, vacuumizing and filling H2 and Ar, increasing temperature and implementing heat treatment; III, continuing to fill a CH4 gas, and depositing; and IV, closing a heating power supply, stopping filling the CH4 gas, rapidly cooling to room temperature by taking Ar and H2 as protective gases, and promoting uniform growth of high-quality monocrystal graphene on the surface of the monocrystal metal substrate. The monocrystal graphene prepared by the invention is large in size, high in quality and few in defect; and the method disclosed by the invention is applicable to monocrystal graphene material manufacturing field.

A chalcopyrite solar cell having a mica substrate or a laminated mica substrate, an intermediate layer made of a ceramic-based material formed on the mica substrate, and a binder layer formed on the intermediate layer. The intermediate layer has a thickness equal to or more than 2 μm and equal to or less than 20 μm. The binder layer has a thickness equal to or more than 3000 Å and equal to or less than 8000 Å. The intermediate layer and the binder layer are interposed between the mica substrate and a molybdenum electrode.

The invention relates to a high temperature resistant pearlescent pigment including a synthetic mica substrate, one layer or multi layers of metal oxide layer coating the synthetic mica substrate, and a zirconia high temperature resistant layer coating the metal oxide layer. The high temperature resistant pearlescent pigment using high temperature is up to 1150 DEG C, the high temperature resistant pearlescent pigment can be stably and well dispersed at high temperature, and can be widely used in underglaze color, in-glaze color, overglaze color, enamel, enamel paper transfers, architectural enamel plates, permanent color scales, high temperature resistant paints and other industries, and the usage amount is 0.5 ~ 50% of that of a glaze or a coating.

A solar cell having high conversion efficiency and excellent flexibility is realized. A mica substrate or laminated mica substrate is used as substrate 1. The mica and laminated mica have high insulating property and heat resistance temperature, which can be selenized at an appropriate treatment temperature through vapor-phase selenization process, high conversion efficiency and excellent flexibility resultantly suitable for mass-production can be obtained. On the other hand, because the surfaces of the mica and laminated mica have large surface roughnesses, it is impossible to induce leakage to obtain high conversion efficiency in the case where a chalcopyrite based light absorbing layer 6 is simply formed. In the present invention, an intermediate layer 2 of ceramic based material and binder layer 4 are interposed between the mica substrate 1 and a molybdenum electrode 5. By providing the intermediate layer 2 and binder layer 4, surface coating property is enhanced and a solar cell having high conversion efficiency can be realized.

The invention relates to a preparation method of a bismuth-layered compound superlattice. According to the method, normal chemical cleaning is carried out on a mica substrate; the mica substrate is introduced into a vacuum system for heating and degassing after being split in atmosphere; and a superlattice film comprising a bismuth compound thin layer and a barrier material sequentially grows on the clean mica substrate. A bismuth compound layer is slowly deposited on the mica surface as a lattice mismatching buffer layer; a barrier material layer grows at the same temperature and speed to further improve the surface quality; and the bismuth compound layer and a barrier alternately grow under the conditions of keeping the growth temperature unchanged and improving the growth speed until growth within set superlattice periods is ended. The preparation method ensures that each material layer in the product superlattice grows in an ideal two-dimensional layered mode; and the technical effects that bismuth-layered compound superlattice quickly grows on the mica substrate, the superlattice interface is kept flat and the superlattice film with an adjustable period is obtained are achieved.

The invention provides a high-saturation iron-series pigment and a production method thereof. The high-saturation iron-series pigment is characterized in that: mica is taken as a substrate, high-refractivity substances and low-refractivity substances are alternatively coated on the substrate, the low-refractivity substances include silicon dioxide, aluminum trioxide and diboron trioxide, and the high-refractivity substances include titanium dioxide, tin dioxide, ferric oxide, cobalt oxide, zirconium dioxide and dichromium trioxide. The production method of the pigment is mainly characterized in that: a soluble salt which corresponds to each of the substances is hydrolyzed and precipitated on the surface of the mica substrate at an appropriate pH value, and the precipitated soluble salt is calcined at the temperature of 450-750 DEG C, so that a coating substance is transformed into an oxide. Compared with a synthetic silicon dioxide substrate, the method has the advantages of higher convenience for drawing materials, low price and reduction in the production cost of the high-saturation iron-series pigment. A hydrolyzing coating process is easy to operate and control, the thickness of a coating layer can be controlled through the color phase change of the pigment, and a production process is simple.

The invention discloses a method for acquiring a large-area high-quality flexible self-supporting single crystalline oxide film based on Van der Waals epitaxy, and mainly solves a problem in the priorart that a process for preparing the oxide film is complicated. The method comprises the following steps: 1, growing the oxide film on a mica substrate through a pulsed laser deposition technology; 2, spin-coating the surface of the oxide film by polymethyl methacrylate, and soaking in weakly acidic solution, while corners of the film are upwarping, taking out the film and placing in clear water,enabling the film to break away from the mica substrate by using a tension force of the water, and transferring to a follow-up needed substrate, to obtain the large-area high-quality flexible self-supporting single crystalline oxide film. The method is capable of, through using the mica substrate and the weakly acidic solution, acquiring the large-area high-quality flexible self-supporting singlecrystalline oxide film based on the Van der Waals epitaxy, greatly shortening the film preparation time, and preparing the multi-functional oxide film for a flexible electronic device.

The invention relates to the field of mica material processing, in particular to mica electro-thermal film. The mica electro-thermal film is in a composite multilayer structure, the middle layer is a heating element, and two sides attached to the heating element are mica substrates. The heating element is an alloy foil sheet with a heating circuit etched, the mica substrates are mica laminated paper, and the electro-thermal film is formed by pressing the alloy foil sheet and the mica substrates through high-temperature adhesives and a high temperature pressing process. The mica electro-thermal film is simple in structure and high in thermal conversion efficiency; and heating equipment produced through the mica electro-thermal film meets utilization requirements of being safe and comfortable and environment friendly and energy saving.

The invention discloses a method for preparing uniform monolayer molybdenum sulfide at centimeter scale. The method comprises the steps of sequentially placing sulfur powder, molybdenum oxide and a mica substrate in an inert atmosphere according to the sequence from upstream and downstream of a gas circuit, carrying out chemical vapor deposition after raising temperature from the room temperature, and cooling down after the deposition is completed, thereby the molybdenum sulfide is obtained on the mica substrate. The method combines the advantages of large-scale preparation of chemical vapor deposition and accurate control of van der Waals epitaxy on layer thickness, the area of the prepared monolayer molybdenum is only limited by the volume of a cavity body of a tube furnace, and the uniformity of layer thickness can be effectively guaranteed. In addition, the growth rate of the molybdenum sulfide under low pressure condition can be effectively controlled, so that the obtained monolayer molybdenum sulfide material shows crystal quality comparable to that of a mechanical exfoliation sample.

A DNA liquid state test method based on an atomic force microscope in the field of measurement for biotechnique comprises the following steps: configurating a buffer solution, then diluting a DNA sample solution to be observed to prepare the DNA sample solution; dripping the DNA sample solution on a mica substrate, washing the mica substrate with ultrapure water after adsorbing, finally setting an imaging test pool directly on the mica substrate; adding an imaging buffer solution into the imaging test pool followed by directly using the atomic force microscope to carry out scanning imaging process in the imaging test pool. The invention can realize AFM imaging of DNA molecules in the buffer solution in the absence of bivalent ions, thus being capable of avoiding the observation of the biological reaction process related to the DNA needing avoiding the participation of bivalent ions in some buffer solutions and providing an effective means for testing the conformation of the DNA molecules in life process.

The invention discloses a method for preparing a bismuth selenide nanosheet on a mica substrate by controlling the gas flow. A catalyst assistance-free chemical vapor deposition method is adopted, anda tubular furnace with a one-port quartz tube is used as growth equipment; the flow of high-purity argon is 70 sccm, and the growth time is 30 min; the Bi2Se3 nanosheet grows on the mica substrate according to a gas-solid growth mechanism; the experimental method is simple and feasible, and has a wide application prospect.

The invention discloses a method for preparing two-dimensional indium trisulfide mono-crystals on a mica substrate. The method comprises the following steps: S1; washing a mica sheet; S2: preparing materials: weighing 10 to 15mg of indium trisulfide powder; putting indium trisulfide powder on a clean quartz boat; flatly placing the washed mica sheet on the quartz boat; then putting the quartz boatin a tubular furnace; S3: controlling gas flow: completely switching on a gas inlet valve and a gas outlet valve of the tubular furnace; opening an argon gas bottle and adjusting the gas flow mount of a gas flow meter to 500 to 600sccm; introducing argon gas into a quartz pipe of the tubular furnace for 10 to 30min to discharge all air impurities; S4: heating and growing: opening the tubular furnace and raising the temperature to 980 DEG C within 20min; after keeping heat at 980 DEG C for 5 to 10min, naturally cooling to obtain the two-dimensional indium trisulfide mono-crystals. The method disclosed by the invention has the advantages of simple needed equipment and preparation technology, short growth time, capability of directly obtaining two-dimensional indium trisulfide with good crystallization degree relatively high purity and relatively large size and the like.

The invention relates to a high-temperature-resistant flexible sensor and a preparation method thereof. The high-temperature-resistant flexible sensor comprises a mica substrate, a conductive layer covering the surface of the mica substrate, and a metal electrode formed on the conductive layer. According to the invention, since the conductive layer grows on the mica, the prepared flexible sensor has advantages of good high-temperature resistance performance, simple structure, and light weight; and the manufacturing process using pulsed laser deposition is simple and is compatible with the traditional coating process and the semiconductor process, so that the photolithography and ion etching are performed and thus the industrial production of flexible sensors is realized simply and efficiently.

The invention provides a preparation method for directly depositing a crystalline vanadium dioxide film on a flexible mica substrate and a product and application of the flexible vanadium dioxide film. According to the method, the vanadium dioxide film with adjustable thickness, flexibility and light transmission performance is grown on the mica sheet substrate, and the flexibility of the product is adjusted in a peeling mode. The product has the advantages of being high in transparency, flexibility and transferability and excellent in infrared regulation performance and can be applied to the fields of flexible smart windows, infrared laser protection, energy-saving coatings and optical switches.

The invention belongs to the field of cadmium sulfide crystal materials, and discloses a method for preparing a non-layered two-dimensional nano-cadmium sulfide crystal material and the product. The method includes the following steps that (a) a reaction vessel is selected and divided into an upstream area, a central area and a downstream area, and a Cd source and an S source are selected and separately placed in the upstream area; (b) an In compound is selected as a surface inhibitor and placed in the central area, and mica is selected as a substrate and placed in the downstream area; (c) inert gas is introduced into the reaction vessel to isolate oxygen for a reaction, and after the reaction, the desired non-layered two-dimensional nano-cadmium sulfide crystal material is formed on the mica substrate. The invention further discloses the product prepared through the method. By means of the method, the requirement for large-batch preparation of the two-dimensional nano-CdS crystal material is met, and the product has a flat crystal surface and a uniform morphology and is uniform in element distribution; besides, rich raw materials are available, the price is low, the preparation method is simple, and large-scale production and promotion are convenient.

The method to induce monocular DNA directed mutation by atomic force microscope in biotechnology field comprises steps shown follow: (1) preparing mica substrate modified by aminosilane; (2) labelling the end of DNA sample; (3) straightening and preparing the labelled sample; (4) inducing mutation; (5) collecting and separating the induced DNA segment; (6) amplifying monocell; (7) detecting amplification by agarose gel electrophoresis; (8) sequenching sample DNA, and screening the mutated sample. The advantages of this invention include: precise location, high resolution, high efficiency, and simple operation.

The invention discloses a high-purity ferro-titanium alloy shiny gold effect pearlescent pigment and a preparation method thereof. The first high-refractive-index oxide layer is tin oxide or zinc oxide, the second and fourth high-refractive-index oxide layers are titanium oxide, and the third and fifth high-refractive-index oxide layers are iron oxide. The product invented is to increase the interface of different substances through multi-layer composite coating of tin oxide, zinc oxide, titanium oxide, and iron oxide. Light can easily propagate along a straight line in the same medium. When encountering the interface of different substances, it will Part of the light is refracted, and the other part is reflected. The light is reflected, refracted, interfered, and superimposed multiple times through the multi-layer metal oxide layer, which enhances the mirror reflection effect of the pearlescent pigment and improves the purity and brightness of the pigment; the production process of the present invention Simple, operable, stable scale production, low cost, suitable for industrial production.

A pearlescent pigment comprises (a) synthetic mica substrate, (b) calcined ferrite coating on the substrate, and (c) an outer layer or treatment wherein said outer layer or treatment was added to the calcined ferrite coated synthetic mica in water.

The pearlescent pigment may be used in exterior applications such as automotive paint systems.

The invention relates to a method for growing a single crystal [gamma]-phase indium selenide film on a mica substrate. The method comprises the following steps of: the step 1) chemically cleaning andmechanically cleaving a single crystal mica substrate to peel off a surface layer to obtain a flat mica substrate with a clean surface; the step 2) transferring the mica substrate prepared in the step1) into a molecular beam epitaxy vacuum system, performing heating to a temperature of 450 DEG C, and performing degassing until the vacuum degree of the system is better than 8*10 <-10> mbar; the step 3) after the mica is degassed, performing natural cooling to a growth temperature range, and simultaneously opening an In beam flow source and a Se beam flow source to start to grow an In2Se3 film;and the step 4) immediately stopping heating the substrate after the film growth is finished, and quickly cooling the substrate to a room temperature to obtain the single crystal [gamma]-phase In2Se3film. According to the method for growing the In2Se3 film, the In2Se3 film is deposited and grown on the surface of the mica substrate by utilizing a molecular beam epitaxy technology, and the high-quality single crystal [gamma]-phase In2Se3 film can be prepared at a lower growth temperature.