Method for preparing non-layered two-dimensional nano-cadmium sulfide crystal material and product

Abstract

The invention belongs to the field of cadmium sulfide crystal materials, and discloses a method for preparing a non-layered two-dimensional nano-cadmium sulfide crystal material and the product. The method includes the following steps that (a) a reaction vessel is selected and divided into an upstream area, a central area and a downstream area, and a Cd source and an S source are selected and separately placed in the upstream area; (b) an In compound is selected as a surface inhibitor and placed in the central area, and mica is selected as a substrate and placed in the downstream area; (c) inert gas is introduced into the reaction vessel to isolate oxygen for a reaction, and after the reaction, the desired non-layered two-dimensional nano-cadmium sulfide crystal material is formed on the mica substrate. The invention further discloses the product prepared through the method. By means of the method, the requirement for large-batch preparation of the two-dimensional nano-CdS crystal material is met, and the product has a flat crystal surface and a uniform morphology and is uniform in element distribution; besides, rich raw materials are available, the price is low, the preparation method is simple, and large-scale production and promotion are convenient.

Description

technical field [0001] The invention belongs to the field of cadmium sulfide crystal materials, and more specifically relates to a method and product for preparing non-layered two-dimensional nanometer cadmium sulfide crystal materials. Background technique [0002] The discovery of graphene has given a huge boost to the study of two-dimensional materials, materials that are only a few atoms thick and can have very different fundamental properties. Many researchers have since exploited the substance's many applications, from making bendable screens to energy storage. However, the graphene band gap is zero, and the transistor made of graphene cannot be turned off, which limits its application in optoelectronic devices and digital electronic devices to a certain extent. For this field, the ideal material is semiconductor , although there are also many methods for modifying graphene to make the bandgap adjustable, but they all encounter the problems of complex process and high...

AI Technical Summary

Problems solved by technology

However, the graphene band gap is zero, and the transistor made of graphene cannot be turned off, which limits its application in optoelectronic devices and digital electronic devices to a certain extent. For this field, the ideal material is semiconductor , although there are also many methods for modifying graphene to make the bandgap adjustable, but they all encounter the problems of complex process and high cost, and are not suitable for application in the field of general semiconductor micro-nano devices. However, in graphene The successful experience in preparation has inspired researchers to explore alternative semiconductor two-dimensional materials; now there are also many graphene-like two-dimensional materials that have attracted the attention of many scholars, especially transition metal sulfides and III-VI two-dimensional materials Such as GaSe, InSe, GaS and Group IV-VI two-dimensional materials such as SnSe 2 ,SnS 2 etc. Due to the weak van der Waals force between layers, the preparation and research of two-dimensional materials are mainly focused on layered materials. However, there are a large number of non-layered materials in nature that also have good properties. Due to They possess three-dimensional chemical bonding that is rarely reported

[0003] Cadmium sulfide (CdS), as a traditional II-VI semiconductor material, has been widely used in the preparation of optoelectronic devices due to its direct band gap, low work function, excellent transport properties, and good thermal and chemical stability. well-applied, however, so far CdS-based synthesis has essentially been presented as zero-dimensional quantum dots and one-dimensional nanomaterials, for non-layered two-dimensional materials must be "cleaved" chemical bonds to expose a large number of dangling bonds On the surface of the material, this will inevitably break the thermal equilibrium dynamic state, thus making the synthesis of two-dimensional CdS extremely difficult; how to conveniently prepare large-scale uniform and defect-free two-dimensional materials for practical use is an important problem that needs to be solved at present.

Mechanical exfoliation is a very effective method to quickly obtain two-dimensional materials, but this method is currently only suitable for layered materials with weak interlayer forces, and the yield is low. It is difficult to obtain two-dimensional CdS structures by this method, In addition, the products obtained by the bottom-up liquid phase method are small in size and difficult to transfer to traditional silicon-based substrates for later device processing.

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