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Method for preparing uniform monolayer molybdenum sulfide at centimeter scale

A technology of molybdenum sulfide and sulfur powder, which is applied in the field of materials, can solve the problems that restrict the scale application of single-layer molybdenum sulfide, and achieve the effect of suppressing surface defects

Inactive Publication Date: 2016-11-23
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Previous studies mainly used top-down stripping methods, such as mechanical stripping, liquid phase ultrasonic stripping, chemical or electrochemical intercalation stripping, etc. These methods can obtain monolayer molybdenum sulfide, but the domain size is only on the order of microns , and there is a certain distribution of layer thickness, which restricts the large-scale application of single-layer molybdenum sulfide

Method used

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  • Method for preparing uniform monolayer molybdenum sulfide at centimeter scale
  • Method for preparing uniform monolayer molybdenum sulfide at centimeter scale
  • Method for preparing uniform monolayer molybdenum sulfide at centimeter scale

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Embodiment 1

[0043] Embodiment 1, the uniform single-layer molybdenum sulfide obtained by growing on the mica is transferred to SiO 2 / Si substrates were tested for valley polarization fluorescence, demonstrating its application prospects in valleytronics research.

[0044] 1) Peel off a thin layer of mica substrate (thickness 50 μm) from the fluorphlogopite block, put it into the LPCVD cavity, and place 0.5g-1g sulfur powder and molybdenum trioxide powder with a particle size of 10 μm in sequence in the upstream (20mg), sulfur powder and MoO 3 The distance is 35cm; the distance between molybdenum trioxide powder and mica substrate is 10cm;

[0045] Among them, the sulfur powder is heated with a heating belt outside the furnace. Start the mechanical pump to pump the system to 1 Pa and keep it open, then purge the pipeline system with 50 sccm argon and 10 sccm hydrogen for 10 minutes.

[0046] 2) Cut off the hydrogen supply, use 50sccm argon as the carrier gas, heat the sulfur powder at ...

Embodiment 2

[0061] Embodiment 2, the application of molybdenum sulfide obtained in embodiment 1 in improving the working efficiency and stability of carbon nanotube-single-layer molybdenum sulfide-n-type silicon solar cell

[0062] 1) The molybdenum sulfide obtained in Example 1 is transferred to the n-type silicon substrate (the middle of the substrate is an n-Si window surrounded by SiO 2) under the assistance of PMMA. 2 oxide layer).

[0063] Figure 7 (a)-(c) are the schematic side view, SEM image and optical photograph of the monolayer molybdenum sulfide transferred onto the n-Si substrate, respectively. It can be found that the monolayer molybdenum sulfide transferred onto n-Si forms a good snug contact with silicon in general despite the formation of many wrinkles.

[0064] 2) In MoS 2 The surface of / Si is further covered with a self-supporting carbon nanotube (CNT) film to form CNT-MoS 2 - Si solar cell prototype device.

[0065] The side view schematic diagram, SEM image an...

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Abstract

The invention discloses a method for preparing uniform monolayer molybdenum sulfide at centimeter scale. The method comprises the steps of sequentially placing sulfur powder, molybdenum oxide and a mica substrate in an inert atmosphere according to the sequence from upstream and downstream of a gas circuit, carrying out chemical vapor deposition after raising temperature from the room temperature, and cooling down after the deposition is completed, thereby the molybdenum sulfide is obtained on the mica substrate. The method combines the advantages of large-scale preparation of chemical vapor deposition and accurate control of van der Waals epitaxy on layer thickness, the area of the prepared monolayer molybdenum is only limited by the volume of a cavity body of a tube furnace, and the uniformity of layer thickness can be effectively guaranteed. In addition, the growth rate of the molybdenum sulfide under low pressure condition can be effectively controlled, so that the obtained monolayer molybdenum sulfide material shows crystal quality comparable to that of a mechanical exfoliation sample.

Description

technical field [0001] The invention belongs to the field of materials, and relates to a method for preparing uniform single-layer molybdenum sulfide at the centimeter scale. Background technique [0002] Monolayer molybdenum sulfide (monolayer MoS 2 ) is a two-dimensional crystal with no dangling bonds on the surface, and the two-dimensional crystal consists of S 3 -Mo-S 3 The triangular prism structural unit of the triangular prism is spliced ​​covalently in the plane, has a long-range period in two dimensions (x, y), and is only atomic-level thick (~0.67nm) in the vertical direction (z). This two-dimensional material is the thinnest semiconductor known so far. It is considered that it may be used as a substitute for silicon in the post-silicon era for next-generation electronic and optoelectronic devices. It has low energy consumption and high The operating characteristics of responsivity, and its two-dimensional characteristics also make the material inherently compat...

Claims

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Application Information

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IPC IPC(8): H01L31/0296
CPCH01L31/0296
Inventor 刘忠范纪清清张艳锋师恩政曹安源
Owner PEKING UNIV
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