Full-temperature-range high-performance n-type Mg-Sb-based thermoelectric material and preparation method thereof

A thermoelectric material and high-performance technology, which can be used in thermoelectric device node lead-out materials, thermoelectric device manufacturing/processing, etc., can solve problems such as poor mechanical properties, and achieve practical application value improvement, power factor improvement, and hardness improvement. Effect

Active Publication Date: 2020-12-04
HARBIN INST OF TECH
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention will solve the existing n-type Mg 3 Sb 2 Based thermoelectric materials cannot achieve high performance at room temperature and high temperature at the same time, and the problem of poor mechanical properties, and provide an n-type Mg-Sb-based thermoelectric material with high performance in the full temperature range and its preparation method

Method used

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  • Full-temperature-range high-performance n-type Mg-Sb-based thermoelectric material and preparation method thereof
  • Full-temperature-range high-performance n-type Mg-Sb-based thermoelectric material and preparation method thereof
  • Full-temperature-range high-performance n-type Mg-Sb-based thermoelectric material and preparation method thereof

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specific Embodiment approach 1

[0026] Embodiment 1: The general chemical formula of the n-type Mg-Sb-based thermoelectric material with high performance in the full temperature range described in this embodiment is B x Mg 3.2-x Sb 1.99-y Bi y Te 0.01 , x=0.01~0.05, y=0.49~1.49.

[0027] The beneficial effects of this embodiment are: this embodiment discloses a high-performance n-type Mg-Sb-based thermoelectric material in the full temperature range and its preparation method, which solves the problem of the current n-type Mg 3 Sb 2 Based thermoelectric materials cannot take into account the problem of achieving high performance at room temperature and high temperature at the same time, while improving their mechanical properties. By increasing the sintering temperature as much as possible, on the one hand, the crystal grains can be significantly grown, and the grain boundary density can be reduced to weaken the scattering of carriers by the grain boundaries, so that the carrier mobility of the material...

specific Embodiment approach 2

[0028] Embodiment 2: This embodiment differs from Embodiment 1 in that: x=0.03-0.05, y=0.49-0.99. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0029] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the general chemical formula of the n-type Mg-Sb-based thermoelectric material with high performance in the full temperature range is B 0.03 Mg 3.17 Sb 1.5 Bi 0.49 Te 0.01 . Others are the same as in the first or second embodiment.

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Abstract

The invention discloses a full-temperature-range high-performance n-type Mg-Sb-based thermoelectric material and a preparation method thereof, and relates to an n-type thermoelectric material and a preparation method thereof. The full-temperature-range high-performance n-type Mg-Sb-based thermoelectric material aims to solve the problems that an existing n-type Mg3Sb2-based thermoelectric materialcannot simultaneously obtain high performance at room temperature and high temperature and is poor in mechanical property. The chemical general formula of thefull-temperature-range high-performance n-type Mg-Sb-based thermoelectric material is B<x>Mg<3.2-x>Sb<1.99y>Bi<y>Te<0.01>. The preparation method comprises the following steps of: 1, weighing; 2, ball milling; and 3, sintering. The preparation method is used for preparing the full-temperature-range high-performance n-type Mg-Sb-based thermoelectric material.

Description

technical field [0001] The invention relates to an n-type thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric materials can directly realize the mutual conversion of heat energy and electric energy, and are the core materials of power generation technology with waste heat and solar energy as heat sources. Thermoelectric materials are divided into n-type and p-type, and thermoelectric devices formed by pairing with each other can be widely used in industrial waste heat recovery power generation, deep space exploration, thermoelectric refrigeration and other fields, and have attracted widespread attention from all over the world. The energy conversion efficiency of thermoelectric devices mainly depends on the thermoelectric figure of merit (ZT) of thermoelectric materials. How to improve the thermoelectric figure of merit is a constant theme in the field of thermoelectric materials research. In addition to seeking performance...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/18H01L35/16H01L35/34
CPCH10N10/853H10N10/852H10N10/01
Inventor 隋解和陈晓曦郭逢凯蔡伟
Owner HARBIN INST OF TECH
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