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Memory device with switching glass layer

A memory, memory cell technology, used in static memory, read-only memory, digital memory information and other directions

Inactive Publication Date: 2008-07-30
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Although germanium-chalcogenides (eg, Ge 40 Se 60 ) glass layer is ideal for PCRAM devices, but other glasses may be ideal for improving switching characteristics or thermal limits of the device

Method used

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Embodiment Construction

[0021] In the following detailed description, reference is made to various specific embodiments of the invention. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It is to be understood that other embodiments may be utilized, and various structural, logical, and electrical changes may be made without departing from the spirit or scope of the present invention.

[0022] As used in the following description, the term "substrate" may include any supporting structure, including but not limited to, a semiconductor substrate having an exposed substrate surface. A semiconductor substrate is understood to include silicon-on-insulator (SOI), silicon-on-sapphire (SOS), doped and undoped semiconductors, epitaxial silicon layers supported by a base semiconductor pedestal, and other semiconductor structures. When referring to a semiconductor substrate or wafer in the following description, previous processes may have been u...

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Abstract

A memory device (100), such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass (18) in contact with a metal-chalcogenide (20) such as tin selenide and methods of forming such a memory deviceare disclosed.

Description

[0001] This application is a continuation-in-part of U.S. Patent Application No. 10 / 916,421, filed August 12, 2004, entitled PCRAM Device With Switching Glass Layer, and is also a continuation-in-part of U.S. Patent Application No. Continuation-in-Part of US Patent Application Serial No. 10 / 893,299 for Memory Device and Method of Fabrication. Each of these applications is hereby incorporated by reference in its entirety. technical field [0002] The present invention relates to the field of random access memory (RAM) devices formed using resistance variable materials. Background technique [0003] Resistance variable memory elements, including programmable conductive random access memory (PCRAM) elements, have been investigated for suitability as semi-volatile and non-volatile random access memory devices. In a typical PCRAM device, the resistance of the chalcogenide glass backbone can be programmed to stable lower conductivity (ie, higher resistance) and higher conductivit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C16/02G11C13/02
CPCG11C13/0011H10N70/20H10B99/00
Inventor 克里斯蒂·A·坎贝尔
Owner MICRON TECH INC
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