Preparation method of stannous selenide nanospheres

A technology of tin selenide and nanospheres, which is applied in the direction of nanotechnology, nanotechnology, binary selenium/tellurium compounds, etc., can solve the problems of secondary environmental pollution, cumbersome reaction steps, and long reaction time, and achieve large output, The effect of high sample purity and rapid response

Inactive Publication Date: 2015-06-10
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned preparation methods generally have the characteristics of long reaction time, low output, need to add reaction catalysts, surfactants, and rely on substrate growth, etc., which lead to high costs and secondary pollution to the environment during the preparation process.
In addition, due to the cumbers...

Method used

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  • Preparation method of stannous selenide nanospheres
  • Preparation method of stannous selenide nanospheres
  • Preparation method of stannous selenide nanospheres

Examples

Experimental program
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Effect test

Embodiment 2

[0026] Example 2 The whole process of preparing the best SnSe nano-faceted sphere.

[0027] The Sn powder and the Se powder with a purity of 99.99% are put into a mixer in a molar ratio of 1.5:1 and mixed evenly. Take out 4.7g of the mixed powder, use a tablet press to briquette, and press into a cylinder with a diameter of 1.8cm and a height of 0.5cm. Put the briquette of the pressed mixed powder into the graphite pot, and then put it into the anode copper pot in the reaction chamber of the DC arc discharge device. The cathode is a tungsten rod electrode. Vacuum the reaction chamber of the DC arc discharge device (preferably less than 1Pa), then fill the mixed gas at 15-20kPa according to the volume ratio of argon: nitrogen = 3:1, and inject circulating cooling water into the condensation wall and copper pot, and start discharge. During the discharge process, keep the voltage at 20V, the current at 100A, and react for 3 to 5 minutes. After the reaction, vacuumize the reac...

Embodiment 3

[0029] Example 3 The whole process of preparing SnSe nanospheres.

[0030] The Sn powder and the Se powder with a purity of 99.99% are put into a mixer according to a molar ratio of 1:1 and mixed evenly. Take out 4.7g of mixed powder, use a tablet press to briquette, and press into a cylinder with a diameter of 1.8cm and a height of 0.5cm. Put the pressed mixed block into the graphite pot, and then put it into the anode copper pot in the reaction chamber of the DC arc discharge device. The cathode is a tungsten rod electrode. Evacuate the reaction chamber of the DC arc discharge device into a vacuum (preferably less than 1Pa), and then fill it with 15-20kPa of nitrogen. The condensation wall and the copper pot are fed with circulating cooling water to start discharging. During the discharge process, keep the voltage at 20V, the current at 100A, and react for 3 to 5 minutes. After the reaction, vacuumize the reaction chamber, then fill it with argon gas of 10-20kpa, passiva...

Embodiment 4

[0031] Example 4 The whole process of preparing SnSe nanospheres.

[0032]The Sn powder and the Se powder with a purity of 99.99% are put into a mixer according to a molar ratio of 1:1 and mixed evenly. Take out 4.7g of mixed powder, use a tablet press to briquette, and press into a cylinder with a diameter of 1.8cm and a height of 0.5cm. Put the pressed mixed block into the graphite pot, and then put it into the anode copper pot in the reaction chamber of the DC arc discharge device. The cathode is a tungsten rod electrode. The reaction chamber of the DC arc discharge device is evacuated (preferably less than 1 Pa), and then filled with 10kPa argon. The condensation wall and the copper pot are fed with circulating cooling water to start discharging. During the discharge process, keep the voltage at 20V, the current at 100A, and react for 5 minutes. After the reaction, add argon to 10-20kpa, passivate the sample in an argon environment for 1-2 hours, and collect a gray-bla...

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Abstract

The invention relates to a preparation method of stannous selenide nanospheres, belonging to the technical field of nano material preparation. The method comprises the following steps: uniformly mixing tin power and selenium powder, and pressing into a pressing block; putting the pressing block in a graphite pot, and putting the graphite pot into a copper pot anode in a reaction chamber of a direct-current arc discharge device; introducing circulating cooling water into the condensation wall and copper pot anode; carrying out discharge reaction in argon or/and nitrogen for 3-5 minutes while keeping the discharge voltage at 20V and the current at 100A; and after the reaction finishes, passivating in an argon environment, and collecting the grey-black powder SnSe nanospheres on the side surface of the inner cavity of the condensation wall. The sample prepared by the method has the advantages of high purity and favorable crystallinity. The preparation process does not need any substrate, template or catalyst, and thus, is environment-friendly. The method has the advantages of short preparation time, low energy consumption, low cost and high repeatability. The product has potential application value in the aspects of solar cell conversion, holographic recording, near-infrared photoelectric devices, recyclable lithium ion batteries and the like.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a simple method for preparing tin selenide nano polyhedral spheres. Background technique [0002] With the extensive and in-depth research on nanomaterials, it is found that nanomaterials have a large specific surface area, and the number of surface atoms, surface energy, and surface tension increase sharply with the decrease of particle size, showing small size effects, surface effects, and quantum size effects. And macroscopic quantum tunneling effect and other characteristics, resulting in nanomaterials are different from traditional materials in terms of magnetism, electricity, optics, and mechanical properties. Therefore, it is of great significance to explore new preparation methods of nanomaterials and to carry out research work on new properties. [0003] Tin selenide (SnSe) is a P-type semiconductor material with a layered orthogonal structu...

Claims

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Application Information

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IPC IPC(8): C01B19/04B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B19/04C01P2002/72C01P2004/04C01P2004/32C01P2004/64Y02P20/133
Inventor 崔啟良张健王秋实祝洪洋武晓鑫江俊儒李冬梅古雅荣
Owner JILIN UNIV
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