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Cu-Te (copper-thulium) nanocrystalline/Cu2SnSe3 (copper and tin selenide) electrothermal composite material and preparation method thereof

A composite material and nanocrystal technology, which is applied in the field of Cu-Te nanocrystal/Cu2SnSe3 thermoelectric composite material and its preparation, can solve the problem that the second phase composite is not involved, and achieves improved ZT value, simple process operation, good thermoelectricity performance effect

Active Publication Date: 2017-12-08
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the Cu-Te binary system has not been extensively exploited and has not been addressed as a second phase composite

Method used

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  • Cu-Te (copper-thulium) nanocrystalline/Cu2SnSe3 (copper and tin selenide) electrothermal composite material and preparation method thereof
  • Cu-Te (copper-thulium) nanocrystalline/Cu2SnSe3 (copper and tin selenide) electrothermal composite material and preparation method thereof
  • Cu-Te (copper-thulium) nanocrystalline/Cu2SnSe3 (copper and tin selenide) electrothermal composite material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 1.1 Weigh a total of 12g of high-purity (≥99.9%) copper and tellurium block elements according to the molar ratio of copper block and tellurium block 1.6:1. Rotate to 1500r / min and carry out the melt spinning operation under argon protection (jet pressure 0.02MPa) and induction current frequency 28Hz to obtain strip-shaped samples containing Cu-Te nanocrystals, which are then manually ground into powder;

[0041] 1.2 Weigh 15g of high-purity (≥99.9%) copper, tin, and selenium powder elements according to the molar ratio of 2:1:3, mix them evenly and put them into a graphite crucible, and put the graphite crucible containing the sample into a quartz tube In the process, it is vacuum-sealed (vacuum degree less than 0.01MPa); the quartz tube containing the sample is put into a resistance furnace for melting, and the temperature is raised from room temperature to 1000 °C at a heating rate of 5 °C / min during the melting reaction process, and then Insulate for 12 hours, cool...

Embodiment 2

[0046] 2.1 Weigh a total of 12g of high-purity (≥99.9%) copper and tellurium block elements according to the molar ratio of copper block and tellurium block of 1.7:1. Rotate to 2000r / min and carry out the melt spinning operation under argon protection (jet pressure 0.06MPa) and induction current frequency 30Hz to obtain strip-shaped samples containing Cu-Te nanocrystals, which are then manually ground into powder;

[0047] 2.2 Weigh 15g of high-purity (≥99.9%) copper, tin, and selenium powder elements according to the molar ratio of 2:1:3, mix them evenly and put them into a graphite crucible, and put the graphite crucible with the sample into the quartz tube In the process, it is vacuum-sealed (vacuum degree less than 0.01MPa); the vacuum-sealed quartz tube containing the sample is put into a resistance furnace for melting, and the temperature is raised from room temperature to 5°C / min during the melting reaction process. 900°C, then keep it warm for 12h, after the end of th...

Embodiment 3

[0052] 3.1 Weigh a total of 12g of high-purity (≥99.9%) copper and tellurium block elements according to the molar ratio of copper block and tellurium block 1.8:1. Rotate to 3000r / min and carry out the melt spinning operation under argon protection (jet pressure 0.04MPa) and induction current frequency 35Hz to obtain strip-shaped samples containing Cu-Te nanocrystals, which are then manually ground into powder;

[0053] 3.2 Weigh 15g of high-purity (≥99.9%) copper, tin, and selenium powder elements according to the molar ratio of 2:1:3, mix them evenly and put them into a graphite crucible, and put the graphite crucible with the sample into the quartz tube In the process, it is vacuum-sealed (vacuum degree less than 0.01MPa); the vacuum-sealed quartz tube containing the sample is put into a resistance furnace for melting, and the temperature is raised from room temperature to 5°C / min during the melting reaction process. 1000°C, then keep warm for 10h, then cool down to 600°C,...

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Abstract

The invention belongs to the technical field of electrothermal materials, and particularly relates to a Cu-Te (copper-thulium) nanocrystalline / Cu2SnSe3 (copper and tin selenide) electrothermal composite material and a preparation method thereof. The volume ratio of the Cu-Te nanocrystalline in the composite material is 0.2 to 1.2%. The prepared Cu-Te (copper-thulium) nanocrystalline / Cu2SnSe3 electrothermal composite material has the advantages that the better electrothermal property is realized, and the ZT value of the Cu2SnSe3 matrix is greatly improved; the operation of the required preparation technology is simple, the parameters are controllable, and the composite material is suitable for larger-scale production.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, in particular to a Cu-Te nanocrystal / Cu 2 SnSe 3 Thermoelectric composite materials and methods for their preparation. Background technique [0002] Thermoelectric materials are energy functional materials that can realize the direct conversion of heat energy and electric energy, and have broad development prospects. Especially in the current situation of shortage of energy resources, the emergence of thermoelectric materials is undoubtedly the choice of the times. The application fields involved can be power generation for aerospace applications, or watches for body temperature power generation. From a practical point of view, thermoelectric materials can be applied to the recycling of industrial waste heat. In addition, from the perspective of thermoelectric refrigeration, environmentally friendly refrigerators, air conditioners and other refrigeration equipment can be prepar...

Claims

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Application Information

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IPC IPC(8): C04B35/547C04B35/622
CPCC04B35/547C04B35/622C04B2235/40C04B2235/407C04B2235/42C04B2235/667C04B2235/785C04B2235/9607
Inventor 赵德刚吴迪薄琳王琳
Owner UNIV OF JINAN
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