Low-cost environment-friendly SnS-based thermoelectric material and preparation method thereof

An environment-friendly, thermoelectric material technology, which is applied in the direction of thermoelectric device node lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problems of poor thermoelectric performance and achieve high thermoelectric value of merit

Inactive Publication Date: 2018-03-27
TONGJI UNIV
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above thermoelectric material is only a combination of two elements, tin and sulfur, which still cannot avoid the problem of too low carrier concentration, resulting in poor thermoelectric performance.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-cost environment-friendly SnS-based thermoelectric material and preparation method thereof
  • Low-cost environment-friendly SnS-based thermoelectric material and preparation method thereof
  • Low-cost environment-friendly SnS-based thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A kind of SnS based thermoelectric material, the chemical formula is Sn 1-x Na x S(x≤0.03), take x=0, 0.005, 0.01, 0.02, 0.03 to prepare SnS-based bulk materials with different carrier concentrations:

[0042] (1) According to different x values, press Sn 1-x Na x The stoichiometric ratio of S (x≤0.03) Weigh elemental raw materials tin Sn, sodium Na, and sulfur S with a purity greater than 99.99%, put them into a quartz tube, and pack after vacuumizing;

[0043] (2) Place the vacuum-encapsulated quartz tube in a high-temperature well-type furnace, raise the temperature from room temperature to 920° C. at a rate of 100° C. / h, keep it for 4 hours, and then quench it to obtain the first ingot.

[0044] (3) Perform high-temperature annealing heat treatment on the first ingot obtained in step (2), place the quartz tube with the first ingot in the pit furnace again, and raise the temperature from room temperature to 650°C at a rate of 150°C / h , quenching and cooling after...

Embodiment 2

[0051] Compared with Example 1, most of them are the same, except that the preparation method in this example is:

[0052] (1) Press Sn 1-x Na x The stoichiometric ratio of S (x≤0.03) Weigh elemental raw materials tin Sn, sodium Na, and sulfur S with a purity greater than 99.99%, put them into a quartz tube, and pack after vacuumizing;

[0053] (2) Place the vacuum-encapsulated quartz tube in a high-temperature well-type furnace, raise the temperature from room temperature to 950° C. at a rate of 120° C. / h, keep it for 3 hours, and then quench it to obtain the first ingot.

[0054] (3) Perform high-temperature annealing heat treatment on the first ingot obtained in step (2), place the quartz tube with the first ingot in the pit furnace again, and raise the temperature from room temperature to 700°C at a rate of 200°C / h , quenching and cooling after heat preservation for 2 days to obtain the second ingot.

[0055] (4) Grind the second ingot obtained in step (3) into powder, ...

Embodiment 3

[0057] Compared with Example 1, most of them are the same, except that the preparation method in this example is:

[0058] (1) Press Sn 1-x Na x The stoichiometric ratio of S (x≤0.03) Weigh elemental raw materials tin Sn, sodium Na, and sulfur S with a purity greater than 99.99%, put them into a quartz tube, and pack after vacuumizing;

[0059] (2) Place the vacuum-encapsulated quartz tube in a high-temperature well-type furnace, raise the temperature from room temperature to 930° C. at a rate of 110° C. / h, keep it for 5 hours, and then quench it to obtain the first ingot.

[0060] (3) Perform high-temperature annealing heat treatment on the first ingot obtained in step (2), place the quartz tube with the first ingot in the pit furnace again, and raise the temperature from room temperature to 660°C at a rate of 180°C / h , quenching and cooling after 4 days of heat preservation to obtain the second ingot.

[0061] (4) Grind the second ingot obtained in step (3) into powder, p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thermoelectric figure of meritaaaaaaaaaa
Login to view more

Abstract

The invention relates to a low-cost environment-friendly SnS-based thermoelectric material and a preparation method thereof. A chemical formula of the thermoelectric material is Sn<1-x>Na<x>S (x is smaller than or equal to 0.03). The low-cost environment-friendly SnS-based thermoelectric material is prepared by adopting the following method of firstly adopting a high-purity simple substance (greater than 99.99%) as a raw material, dosing according to a stoichiometric ratio and putting a product into a quartz tube for vacuum packaging; and carrying out high-temperature melting, quenching and annealing heat treatment in a pit furnace, grinding the product into powder, carrying out vacuum hot-pressing sintering, slowly cooling and then obtaining a sheet block material, namely a stannic sulfide material of a target component. Compared with the prior art, the low-cost environment-friendly SnS-based thermoelectric material has the advantages that the position of a tin atom is doped through using a low-valence sodium atom, and more holes are introduced into the material, so that the carrier concentration (about 1019cm<-3>) of a p-type SnS thermoelectric semiconductor is effectively improved and the thermoelectric merit figure reaches 0.65 at 850K; and in addition, SnS is a thermoelectric material with large-scale application potential due to relatively low preparation cost.

Description

technical field [0001] The invention relates to the technical field of new energy materials, in particular to a low-cost and environment-friendly SnS-based thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric materials (thermoelectric materials) are functional materials that realize the conversion of electrical energy and thermal energy through the transport of carriers inside the material. Due to its small size, no pollution, no noise, no transmission parts, etc., the material has good application prospects in thermoelectric refrigeration (especially in the fields of waste heat conversion, industrial waste heat utilization, and solar energy composite power generation) and thermoelectric refrigeration. , these advantages make it a leader in the family of new energy materials, which has received extensive attention in recent years. [0003] The conversion efficiency of thermoelectric materials is usually measured by the dimen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 裴艳中李文周斌强
Owner TONGJI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap