Preparation method of SnSe-based oriented polycrystalline thermoelectric material

A thermoelectric material and orientation technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric device node lead-out materials, etc., can solve the problems of unfavorable industrial production application, insignificant difference in ZT value, poor orientation, etc., and achieve mechanical The effect of good performance, simple preparation method and low cost

Pending Publication Date: 2019-08-06
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] S. Sassi et al. prepared polycrystalline SnSe with a certain orientation by vacuum melting combined with spark plasma sintering. Its thermoelectric properties have certain anisotropy in the direction perpendicular to the pressure and parallel to the direction of pressure, but the The difference in the ZT value of the above is not obvious, and the maximum ZT value is only 0.5
Q.zhang et al. prepared polycrystalline SnSe

Method used

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  • Preparation method of SnSe-based oriented polycrystalline thermoelectric material
  • Preparation method of SnSe-based oriented polycrystalline thermoelectric material
  • Preparation method of SnSe-based oriented polycrystalline thermoelectric material

Examples

Experimental program
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Embodiment 1

[0029] In this embodiment, the chemical formula of the polycrystalline SnSe-based thermoelectric material is SnSe.

[0030] The preparation process of the polycrystalline SnSe-based thermoelectric material is as follows:

[0031] (1) taking Sn particles and Se particles as reaction raw materials according to the stoichiometric ratio of SnSe;

[0032] (2) The reaction raw materials weighed in the step (1) are packed into a clean and dry first reaction vessel, the first reaction vessel is evacuated to below 10 Pa, and then the opening of the first reaction vessel is sealed with an oxyacetylene flame;

[0033] (3) Place the sealed first reaction vessel in a swing furnace heated to 920°C, and smelt and swing for 30 minutes;

[0034] (4) After the smelting is completed, turn off the power supply of the swing furnace, take out the first reaction vessel, and cool it to room temperature in the air to obtain an ingot of SnSe-based thermoelectric material;

[0035] (5) Grinding the ob...

Embodiment 2

[0038] In this embodiment, the chemical formula of the polycrystalline SnSe-based thermoelectric material is SnSe.

[0039] The preparation process of the polycrystalline SnSe-based thermoelectric material is basically the same as the preparation process in Example 1, except that the following step (7) is performed after step (6):

[0040] (7) the block obtained in step (6) is placed in In the graphite mold, put it into a hot-press furnace to evacuate to below 10pa, perform a second hot-press under the conditions of a temperature of 470°C and a pressure of 60Mpa, and then demould.

[0041] XRD (X-ray Diffraction, X-ray diffraction) tests and thermoelectric performance tests were performed on the bulk samples obtained in the above Examples 1 and 2 respectively, and the test directions were both perpendicular to the pressure direction.

[0042] figure 1 It is the XRD spectrum of the bulk sample that above-mentioned embodiment 1 and 2 obtain, can know from it, the phase of the...

Embodiment 3

[0045] (1) According to Na 0.03 sn 0.97The stoichiometric ratio of Se takes Na particles, Sn particles and Se particles as reaction raw materials in the glove box;

[0046] (2) The reaction raw materials weighed in the step (1) are packed into a clean and dry first reaction vessel, the first reaction vessel is evacuated to below 10 Pa, and then the opening of the first reaction vessel is sealed with an oxyacetylene flame;

[0047] (3) Place the sealed first reaction vessel in a swing furnace heated to 920°C, and smelt and swing for 30 minutes;

[0048] (4) After the smelting is completed, turn off the power supply of the swing furnace, take out the first reaction vessel, and cool to room temperature in air to obtain Na 0.03 sn 0.97 Ingot casting of Se thermoelectric material;

[0049] (5) Utilize high-energy ball milling to obtain Na 0.03 sn 0.97 The Se thermoelectric material ingot is ground into powder, and the ball milling time is 15 minutes;

[0050] (6) Put the pow...

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Abstract

The invention discloses a preparation method of a SnSe-based oriented polycrystalline thermoelectric material. The method combines a smelting method with a multi hot-pressing method, and comprises thesteps of firstly, smelting a prepared raw material and casting the prepared raw material into an ingot; then ball-milling the casted ingot to obtain powders; hot-pressing the powders to obtain a block; and finally hot pressing the block multiple times. The method is simple, easy to implement, and low in cost. Multiple hot pressing can enhance the texture, improve the orientation and improve the electrical properties during the plastic deformation and re-crystallization process, thereby improving the thermoelectric figure of merit of the SnSe-based thermoelectric material.

Description

technical field [0001] The invention relates to the field of thermoelectric materials, in particular to a method for preparing oriented polycrystals of SnSe-based thermoelectric materials. Background technique [0002] Thermoelectric conversion technology has attracted more and more attention due to its environmental friendliness, and thermoelectric materials are clean, small in size, without transmission parts, and noiseless, which have attracted extensive research. Thermoelectric materials are functional materials that use the transport of phonons and carriers to achieve direct mutual conversion between thermal energy and electrical energy. Generally, the dimensionless thermoelectric figure of merit (ZT value) is used to characterize the performance of thermoelectric materials, where ZT=S 2 σT / κ, S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, and T is the temperature. In general, the larger the ZT value, the better the ther...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 梁少军徐静涛蒋俊刘永福乐松江浩川
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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