High-performance and low-cost MnGeTe2-based thermoelectric material and preparation method thereof

A thermoelectric material and low-cost technology, applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., to achieve the effect of reducing carrier concentration, high thermoelectric figure of merit, and improvement of thermoelectric figure of merit

Active Publication Date: 2018-11-13
TONGJI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In recent years, as a member of Group IV-VI semiconductors, GeTe has attracted more and more attention because of its complex energy band structures under different structures. Based on energy band regulation engineering, GeTe-based thermoelectric materials have achieved ~2.3 Thermoelectric figure of merit, however, although GeTe exhibits excellent thermoelectric performance, considering the expensive cost of elemental germanium, there are still many problems in the large-scale application of thermoelectric materials, and cost reduction is particularly critical

Method used

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  • High-performance and low-cost MnGeTe2-based thermoelectric material and preparation method thereof
  • High-performance and low-cost MnGeTe2-based thermoelectric material and preparation method thereof
  • High-performance and low-cost MnGeTe2-based thermoelectric material and preparation method thereof

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preparation example Construction

[0044] The present invention also proposes the above-mentioned high-performance and low-cost MnGeTe 2 A method for preparing a base thermoelectric material, comprising the following steps:

[0045] (1) Vacuum packaging: Take the elemental raw materials Bi, Ge, Te and Mn according to the stoichiometric ratio, and put them into the quartz tube in order according to the melting point from large to small, and vacuumize the packaging;

[0046] (2) Melt quenching: heating the quartz tube containing the elemental raw material to make the raw material fully react in the molten state, followed by quenching to obtain the first ingot;

[0047] (3) Annealing and quenching: put the first ingot into another quartz tube, heat up and anneal, and quench to obtain the second ingot;

[0048] (4) Vacuum hot-press sintering: the second ingot is ground into powder, placed in a graphite mold, vacuum hot-press sintered, and cooled to obtain the MnGeTe 2 based thermoelectric materials.

[0049] In ...

Embodiment 1

[0060] A MnGeTe 2 Based thermoelectric material, the chemical formula is MnGe 1-x Bi x Te 2 (x≤0.12), take x=0, 0.02, 0.04, 0.06, 0.08, 0.10 and 0.12 to prepare MnGeTe with different carrier concentrations 2 Base block material:

[0061] (1) According to different x values, press MnGe 1-x Bi x Te 2 The stoichiometric ratio of (x≤0.12) Weigh the elemental raw material germanium Ge, bismuth Bi, tellurium Te with a purity greater than 99.9% and the elemental raw material Mn with a purity greater than 99.7% into a quartz tube, vacuumize and package;

[0062] (2) Place the vacuum-encapsulated quartz tube in a high-temperature well-type furnace, raise the temperature from room temperature to 1100°C at a rate of 180°C / h, keep it warm for 10 hours, and then quench it to obtain the first ingot.

[0063] (3) Carry out high-temperature annealing heat treatment to the first ingot obtained in step (2), place the quartz tube equipped with the first ingot in a well-type furnace, and r...

Embodiment 2

[0074] Compared with Example 1, most of them are the same, except that the heating process in step (2) of this example is specifically: heating from room temperature to 1000 °C at a rate of 100 °C / h, quenching and quenching after 12 hours of heat preservation.

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Abstract

The invention relates to a high-performance and low-cost MnGeTe2-based thermoelectric material and a preparation method thereof. The chemical formula of the thermoelectric material is MnGe1-xBixTe2, wherein x< / =0.12. The preparation method includes the steps of firstly: taking single Bi, Ge, Te and Mn according to the stoichiometric ratio, sequentially placing into a quartz tube from high meltingpoint to low melting point, and performing vacuum encapsulation; secondly, heating the quartz tube to allow the raw material to have sufficient reaction in the molten state, and then quenching to obtain a first cast ingot; thirdly, loading the first cast ingot into another quartz tube, heating and annealing, and quenching to obtain a second cast ingot; fourthly, grinding the second cast ingot intopowder, placing into a graphite mould, performing vacuum hot pressing sintering, and cooling to obtain the MnGeTe2-based thermoelectric material. Compared with the prior art, the MnGeTe2-based thermoelectric material is good in thermoelectric performance, mechanical performance, low in cost and high in application potential.

Description

technical field [0001] The invention belongs to the technical field of new energy materials, and relates to a high-performance and low-cost MnGeTe 2 Based thermoelectric materials and their preparation. Background technique [0002] Thermoelectric materials (thermoelectric materials) are functional materials that realize the conversion of electrical energy and thermal energy through the transport of carriers inside the material. In recent years, with the depletion of traditional energy resources in the world and the continuous deterioration of the global climate, the search for environmentally friendly Small, sustainable energy is imminent. Thermoelectric materials have good application prospects in the fields of thermoelectric power generation and thermoelectric refrigeration due to their advantages of small size, no pollution, no noise, and no transmission parts. These advantages make them a leader in the new energy material family. Recently, has received extensive atten...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 裴艳中李文周斌强
Owner TONGJI UNIV
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