Preparation method of thin-film thermoelectric material

A thermoelectric material and thin film technology, which is applied in the field of preparation of thin film thermoelectric materials, can solve the problems of low energy utilization rate of thermoelectric devices, limited application of thermoelectric materials, and low thermoelectric figure of merit of materials, and achieves improved thermoelectric conversion efficiency and easy scale. The effect of production, easy price

Inactive Publication Date: 2018-01-23
滁州玛特智能新材料科技有限公司
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Problems solved by technology

[0006] Traditional thermoelectric materials are bulk materials, the thermoelectric figure of merit of the material is very low, and the energy utilization rate of thermoelectric devices is low, which limits the further expansion of the application of thermoelectric materials

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  • Preparation method of thin-film thermoelectric material
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preparation example Construction

[0033] The invention discloses a preparation method of a thin-film thermoelectric material. The thin-film thermoelectric material is a low-dimensional Bi 2 Te 3 The preparation idea is to firstly prepare porous alumina (AAO) by electrochemical method, and then grow Bi on the surface and inside of the porous alumina by electrochemical deposition. 2 Te 3 Thin-film high-performance thermoelectric materials prepared from isobasic nanomaterials. The above-mentioned materials have performance characteristics such as low thermal conductivity, high Seebeck coefficient, and high electrical conductivity, which make them excellent in thermoelectric performance. The preparation of the material adopts a traditional electrochemical method which is easy for industrial production, has low requirements on the purity of raw materials, is cheap and easy to obtain and is suitable for large-scale production. The material's excellent thermoelectric performance and relatively low price provide te...

Embodiment 1

[0052] Embodiment 1: a kind of thin film thermoelectric material is nanoscale Bi 2 Te 3 , its preparation method is as follows:

[0053] (1) Choose an aluminum material with a purity of 99.99% as the substrate, sonicate it in ethanol for 5 minutes, remove the oil, place it in an oven at 500°C for annealing treatment for 2 hours, and take it out after cooling;

[0054] (2) Place it in 0.4M oxalic acid electrolyte, and prepare a porous anodized aluminum template with a pore size of 40-60nm through two anodic oxidations; see figure 2 with image 3 , figure 2 Scanning electron micrographs of the front side of the porous anodized aluminum oxide template (AAO) prepared for the electrochemical method, image 3 The scanning electron micrograph of the side of the porous anodized aluminum oxide template (AAO) prepared by electrochemical method, it can be found from the electron microscope photo that the porous anodic aluminum oxide template (AAO) of this embodiment has a pore size...

Embodiment 2

[0058] Embodiment 2: a kind of thin film thermoelectric material is nanoscale Sb 2 Te 3 , its preparation method is as follows:

[0059] (1) Choose an aluminum material with a purity of 99.99% as the substrate, sonicate it in ethanol for 5 minutes, remove the oil, place it in an oven at 500°C for annealing treatment for 2 hours, and take it out after cooling;

[0060] (2) Place in 0.4M oxalic acid electrolyte, and prepare a porous anodized aluminum template with a pore size of 10-30nm through two anodic oxidations;

[0061] (3) The porous anodized alumina template prepared in step (2) is the negative electrode, the platinum electrode network is the anode, and the tellurium dioxide and antimony trioxide acidified with nitric acid are the electrolyte and a small amount of complexing agent and additives are added. After electroplating for 5 hours, a sample is obtained; the complexing agent is tartaric acid, sodium tartrate or sodium periodate, and the additive is diaminocarbami...

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Abstract

The invention discloses a preparation method of a thin-film thermoelectric material. The preparation method comprises the following steps: preparing a porous alumina template by adopting an electrochemical method; taking the porous alumina template as a working electrode; putting the working electrode and an auxiliary electrode in an electrolyte, and preparing a sample through an electrochemical deposition method, wherein the electrolyte comprises a precursor, a complexing agent and an additive, and the precursor is a combination of two or three of tellurium dioxide, bismuth nitrate and diantimony trioxide; and subjecting the sample to cleaning, drying and annealing treatment in sequence, so as to obtain the thin-film thermoelectric material. The preparation method disclosed by the invention has the advantages that the thin-film thermoelectric material is low in heat conductivity coefficient, high in electrical conductivity, high in Seebeck coefficient and high in thermoelectric figureof merit.

Description

technical field [0001] The invention relates to the field of new energy materials and preparation methods thereof, in particular to a preparation method of thin-film thermoelectric materials. Background technique [0002] With the advent of the energy crisis, people began to be aware of the limited and gradual depletion of natural resources, and stimulated commercial interest in the development of new energy and comprehensive utilization of various energy sources. Thermoelectric materials are the most suitable for utilizing temperature differences existing in nature and industrial A new type of energy material that utilizes waste heat and waste heat from automobile exhaust. Thermoelectric material is a functional material that converts heat energy and electric energy. After the current is applied to both ends of the thermoelectric material, it will generate cold and hot ends, which can be used for cooling and heat preservation; the two ends of the thermoelectric material are...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D9/04
Inventor 徐桂英夏玉明马军涛张洪国
Owner 滁州玛特智能新材料科技有限公司
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