Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silver-containing p-type semiconductor

A composition and technology of thermoelectric elements, applied in the direction of thermoelectric device junction lead wire materials, thermoelectric devices that only use the Peltier or Seebeck effect, etc., can solve the problems of low efficiency of thermoelectric devices

Inactive Publication Date: 2006-11-15
BOARD OF TRUSTEES OPERATING MICHIGAN STATE UNIV
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the efficiency of thermoelectric devices fabricated using these materials is relatively low, on the order of 5-8% energy conversion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silver-containing p-type semiconductor
  • Silver-containing p-type semiconductor
  • Silver-containing p-type semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0022] The present invention provides a thermoelectric material containing silver (Ag). According to one embodiment, the thermoelectric material has the general formula Ag 1-x m m M'Q 2+m ,in:

[0023] (a) M is at least one element selected from the group consisting of Pb (lead), Sn (tin), Ca (calcium), Sr (strontium), Ba (barium), divalent transition metals, and combinations thereof;

[0024](b) M' is at least one element selected from Bi (bismuth), Sb (antimony), and combinations thereof;

[0025] (c) Q is at least one element selected from Se (selenium), Te (tellurium), S (sulfur), and combinations thereof; and

[0026] (d) 8≤m≤24; and 0.01≤x≤1.

[0027] In a preferred embodiment, 0.05≤x≤0.6; more preferably 0.1≤x≤0.3. Preferably 10≤m≤24; more preferably 12≤m≤22; more preferably 15≤m≤20. (The words "preferred" and "preferably" are used herein to denote embodiments of the invention which provide particular benefits under particular conditions. However, other embodimen...

Embodiment

[0076] The thermoelectric material of the present invention, which has the nominal general formula Ag 1-x Pb 18 SbT 20 , where x=0.24. Specifically, 0.128 grams of Ag, 5.823 grams of Pb, 0.1901 grams of Sb, and 3.9846 grams of Te were placed in a 13 mm quartz tube, and the -4support) sealed. Place the quartz tube in a shaking furnace. The furnace was heated to 980°C in 1800 hours. The furnace was shaken at 980°C for 4 hours. The shaking was then stopped and the furnace was cooled to 550°C at a rate of 10°C / hour. The furnace was then cooled to 50°C at a rate of 25°C / hour. The product was a shiny ingot which was confirmed to have the NaCl structure by powder X-ray analysis.

[0077] In a similar manner, thermoelectric materials with x = 0.16 and 0.19 were also prepared with substantially similar results. Moreover, in a similar manner, the nominal general formula Ag was prepared 1-x Pb 18 SbSe 20 , where x = 0.24, with substantially similar results.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A thermoelectric material of the general formula Ag 1-X M m M'Q 2+m , wherein M is selected from the group consisting of Pb, Sn, Ca, Sr, Ba, divalent transition metals, and combinations thereof; M' is selected from the group consisting of Bi, Sb, and combinations thereof; Q is selected from the group consisting of Se, Te, S, and combinations thereof; 8 <= m <= 24; and 0.01 <= x <= 0.7. In embodiments of the invention, the compositions exhibit n-type semiconductor properties. In preferred embodiments, x is from 0.1 to 0.3, and m is from 10 to 18. The compositions may be synthesized by adding stoichiometric amounts of starting materials comprising Ag, M, M', and Q to a reaction vessel, heating the starting materials to a temperature and for a period of time sufficient to melt the materials, and cooling the reaction product at a controlled rate of cooling.

Description

[0001] funding [0002] Research work on this invention was supported in part by the Office of Naval Research under grant numbers DAAG 55-97-1-0184 and N00014-01-1-0728. The government has certain rights in this invention. field of invention [0003] The present invention generally relates to thermoelectric materials. In particular, the present invention relates to silver-containing semiconductor materials suitable for use in various thermoelectric devices. Background of the invention [0004] Various thermoelectric devices using thermoelectric materials for forming electric current or for cooling and heating applications are known in the art. Thermoelectric devices have significant advantages in a variety of applications. For example, electricity generators based on thermoelectric materials do not require the use of moving parts like conventional generators. This feature significantly increases the reliability of the thermoelectric device, since mechanical wear and corr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L35/20H01L35/14
CPCH10N10/851H10N10/854H10N10/852H10N10/13
Inventor 默库里·卡纳特齐迪斯许桂芳
Owner BOARD OF TRUSTEES OPERATING MICHIGAN STATE UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com