Method for preparing misfit chalcogenide thermoelectric material by solid-phase reaction method

A solid-phase reaction method and chalcogenide technology, which is applied in the field of materials to achieve the effects of strong controllability, low thermal conductivity and simple process operation

Active Publication Date: 2016-11-16
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In view of the fact that there are no relevant reports on the preparation of such therm

Method used

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  • Method for preparing misfit chalcogenide thermoelectric material by solid-phase reaction method
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  • Method for preparing misfit chalcogenide thermoelectric material by solid-phase reaction method

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Embodiment 1

[0032] (1) Weigh 2g of Sn powder, Cu powder or Co powder, Ti powder, and S powder according to the ratio of mass ratio 1:0.04:1.96:5, wherein the ratio of Cu powder or Co powder is 0.04, and the ratio of Ti powder It is 1.96, and then directly mix it in an agate mortar and grind for 30 minutes to make the powder mix evenly.

[0033] (2) Transfer the ground powder into a steel mold with Φ=10 mm, and press it with a pressure of 5 MPa for 5 min.

[0034] (3) Move the pressed sheet sample into a cleaned Φ=20mm quartz tube. Use a hydrogen-oxygen generator to seal the tube; then use a mechanical pump to pre-vacuumize, and then use a molecular pump to evacuate to 1.5×10 -3 Pa, seal the tube.

[0035] (4) Finally, the quartz tube containing the sample is placed in a box furnace for sintering.

[0036] (5) The temperature rise for the first sintering: After 1000 minutes, the temperature was raised from room temperature to 500°C, and kept for 720 minutes; after 300 minutes, the tempe...

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Abstract

The invention belongs to the field of materials, and relates to a method for preparing a misfit chalcogenide thermoelectric material by a solid-phase reaction method. The method comprises the steps of weighing Sn powder and Cu powder or Co powder, Ti powder and S powder based on a mass ratio of 1 to 0.04 to 1.96 to 5, then grinding and mixing the powder; pressing the powder at the pressure of 3-5MPa into tablets, and putting the tablets into a quartz tube; vacuumizing and sealing the tube and then sintering; and performing steps of grinding, vacuumizing and sintering for two rounds to obtain the misfit chalcogenide. The method for preparing the misfit chalcogenide by the solid-phase reaction method provided by the invention can be used for preparation of the misfit-system chalcogenide thermoelectric material; the process is simple to operate and high in repeatability; the phase-forming degree, the density and the misfit structure of the misfit compound can be controlled by adjusting the technological parameters of temperature rise speed, phase-forming temperature, heat preservation time, sintering times and the like; the method is high in controllability; and the prepared misfit layered compound has the characteristics of high phase-forming degree, low impurities, high density, low thermal conductivity, high thermoelectric figure of merit and the like.

Description

technical field [0001] The invention belongs to the field of materials, and relates to a method for preparing stacking fault structure chalcogenide thermoelectric materials by a solid phase reaction method. Background technique [0002] With the continuous increase of energy demand, the development and utilization of traditional fossil fuels have been greatly enhanced, causing irreversible damage to the environment. At the same time, with the continuous consumption of fossil fuels, its storage capacity is decreasing day by day. Therefore, the development of various new energy sources and clean energy sources has been put on the agenda. With the continuous development and utilization of solar energy, wind energy, tidal energy, and geothermal energy, new energy occupies an increasing share in the energy market. However, the energy conversion mechanism of primary energy-mechanical energy-electric energy cannot get rid of these numerous clean energy sources in the process of u...

Claims

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Application Information

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IPC IPC(8): H01L35/20
CPCH10N10/854
Inventor 昂然尹聪唐军刘宁
Owner SICHUAN UNIV
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