23 results about "Oriented crystal" patented technology

A method for manufacturing a piezoelectric film including a monocrystalline or polycrystalline piezoelectric material in which a particular oriented crystal axis is inclined from a direction perpendicular or substantially perpendicular to the film, includes preparing a substrate including a single crystal with a same rotational symmetry about a particular substrate crystal axis as a rotational symmetry about the particular oriented crystal axis in the piezoelectric material, and the particular substrate crystal axis has a same inclination as an inclination of the particular oriented crystal axis, and forming a piezoelectric film including the piezoelectric material on the substrate by an epitaxial process.

The invention provides a perovskite thin film and a perovskite solar cell, and belongs to the field of photovoltaic technology. The perovskite thin film comprises vertical orientation crystal grains, and the vertical orientation crystal grains are composed of a plurality of vertical sheet structures. According to the perovskite thin film provided by the invention, the vertical orientation crystal grains are composed of the plurality of vertical sheet structures, the carrier transmission paths among the plurality of vertical sheet structures are relatively short, and the preferred orientation crystal structure weakens the scattering effect on carriers, so that the mobility of the carriers is improved, and the performance of the perovskite thin film is improved. And because the grain boundary interface is less and the defect concentration is reduced, the service life of electrons in the perovskite thin film is longer, the diffusion distance is more obvious, and the opportunity of forming current by long-distance migration of the electrons is increased. Therefore, the structure of the perovskite thin film achieves the effects of low defect state and high carrier transmission efficiency, the improvement of the battery efficiency is facilitated, and the improvement of the battery stability is also facilitated through the compact and orderly arranged crystal grains and fewer defect sites.

The application discloses a kind of directional crystal mould shell automatic detection cleaning system.In the application, by transient air pressure excitation and multi-scale wavelet domain digital speckle correlation detection, the micro crack identification ability is identified from surface opening defect to sub-surface strain anomaly stage, which significantly improves the detection sensitivity of hidden cracks and wall thickness thinning defects, and replaces artificial visual experience determination with full-field strain cloud quantification grading, which significantly reduces the missed detection rate and the quality risk caused by human error. Strain-cleanness dual-factor fusion evaluation simultaneously completes the judgment of structural integrity and internal cavity cleanliness at the same station, improving the completeness and automation of defect evaluation, reducing the drag of batch offline sampling and chemical permeation operation on production rhythm, and eliminating the need for fluorescent penetrant immersion and cleaning process with transient pulse excitation method, which improves the single-piece detection rhythm and reduces the cost of hazardous chemicals procurement, storage and waste liquid treatment.

The invention discloses a transparent conductive film with a hardness gradient composite structure and a flexible electronic device, and relates to the technical field of flexible electronics. The transparent conductive thin film comprises a flexible substrate, a gradient buffer layer and a metal oxide conductive layer, and the gradient buffer layer forms a hardness gradient which is gradually increased from the flexible substrate to the metal oxide conductive layer; the gradient buffer layer takes methane, silane and nitrous oxide as gas sources and is prepared by adopting a PECVD (Plasma Enhanced Chemical Vapor Deposition) process, and in the deposition process, the flow of the methane is configured to be linearly decreased, and the flow of the silane and the nitrous oxide is configured to be linearly increased; according to the invention, the gradient buffer layer effectively obstructs water vapor and organic volatile matters released by the flexible substrate, the hardness gradient of the gradient buffer layer promotes the formation of a metal oxide highly oriented crystal structure, and the interface stress is improved; the prepared transparent conductive film has the remarkable advantages of low defect density, good conductivity, high bending resistance and good long-term stability.

To provide a grain-oriented electrical steel sheet that has excellent magnetic properties due to refined secondary recrystallization and at the same time has little variation in properties within the coil. [Solution] Grain-oriented electrical steel sheets are made of {110} <001> The size of the oriented crystal grains satisfies the following formula 1: <001> It is characterized in that the area fraction of crystal grains with angles deviating from the orientation by 3° or less is 60% or more. <Expression 1> W / L≦1.5 (In the above formula 1, W is the diameter in the TD direction (width direction of the secondary recrystallized grain), and L is the diameter in the RD direction (longitudinal direction of the secondary recrystallized grain).)

The invention belongs to the field of carbon fiber composite materials, and discloses a lightweight superconductive carbon fiber composite cable and a preparation method thereof, the cable is composed of a carbon fiber bundle layer, a multifunctional composite coating, a superconductive functional layer, an insulating layer, a shielding layer and a protective layer in sequence; the multifunctional composite coating is prepared from 60 to 65 parts of a polyamide acid precursor, 8 to 12 parts of 4-aminopropyltrimethoxysilane, 1 to 2 parts of glutaraldehyde, 3 to 5 parts of graphene nanosheets and 15 to 20 parts of a YBaCuOx precursor; a YBaCuOx ceramic layer with oriented crystals and continuous micro-channel cooling is obtained on the surface of the composite coating in situ by the superconductive functional layer through a pre-sintering, calcining and annealing cycle process combining sol-gel deposition and supercritical COdrying; the prepared cable has the advantages of high critical current density, zero resistance loss, excellent thermal-mechanical stability and extremely low self weight, and is suitable for the fields of high-frequency and long-distance lossless power transmission and low-temperature magnetic resonance.

This invention proposes a method for preparing a composite substrate for semiconductor device manufacturing. The steps include: placing raw carbon into a reaction chamber under a hydrogen atmosphere, evacuating the reaction chamber to a vacuum, heating to 1000-1500℃ (e.g., 1000℃, 1200℃, or 1500℃), holding at this temperature for 1-3 hours, and cooling and cleaning to obtain a carbon substrate; grinding and mixing a tantalum source, tantalum fluoride, and flux to obtain a coating powder; transferring the coating powder to a reaction chamber with a pulsed electric field for pulsed electric field-assisted vapor deposition, and cooling to obtain a tantalum carbide pre-coating material with oriented crystal orientation; transferring the tantalum carbide pre-coating material to a high-temperature sintering furnace and heating at 1800-2400℃ in an inert atmosphere for 0.5-6 hours to obtain a composite substrate, which is used for semiconductor device manufacturing. Through the oriented crystal orientation, the tantalum carbide coating achieves higher electrical and thermal conductivity.

A novel high temperature thermal sensing method and device is disclosed that can employ a dual-sensing platinum resistor encased in a mono-crystalline alpha-alumina (sapphire) substrate. The device can comprise four platinum trace elements, oriented with 90° rotational symmetry atop a 1120 oriented crystal lattice substrate. The resistance temperature detectors (RTD) temperature measurement calibration can then be monitored for drift and corrected by comparing the differential strain-derived measurement of temperature to the temperature derived from the RTD measurement. This can allow the device to self-calibrate via comparison of two functionally independent measures of electron mobility and operate in extreme environments which have previously caused RTD sensors to drift from their initial calibration and introduce an undefined measurement error.

The present invention relates to a packaging bag (10), characterized in that a multilayer film (5) for packaging with a heat-sealable resin layer (3) on its surface is used, which is formed by bonding the heat-sealable resin layers (3) of the film (5) together, and in the packaging bag (10), there are oriented crystals in the sealing part (7) formed by bonding the heat-sealable resin layers (3) together.

The present invention relates to an injection molded body of a polymer piezoelectric material, a piezoelectric element, a manufacturing apparatus and a manufacturing method for an injection molded body of a polymer piezoelectric material, and provides an injection molded body of a polymer piezoelectric material and a piezoelectric element that exhibit a piezoelectric phenomenon having a stress application direction in a direction rotating around the b-axis and are easily applicable to practical devices, etc., and a manufacturing apparatus and a manufacturing method for an injection molded body of a polymer piezoelectric material that can manufacture the injection molded body of a polymer piezoelectric material. An injection molded body of a polymer piezoelectric material, characterized in that it has piezoelectricity and contains a helical chiral polymer crystal, the helical chiral polymer crystal is composed of a polymer chain, has a unit lattice with the a-axis, b-axis and c-axis as crystal axes, and the lengths of the crystal axes are b-axis < a-axis < c-axis, the c-axis is parallel to the long-chain direction of the polymer chain, and the helical chiral polymer crystal is a b-axis uniaxially oriented crystal.

The utility model aims to provide a piezoelectric crystal processing orientation clamp, which is used for orienting the end face of a crystal and is characterized by comprising an orientation base, a clamp, an adjusting bolt, a bolt sleeve and a nylon sheet. The adjusting bolt is installed on the clamp through a screw hole, the bolt sleeve is installed on the front end face of the adjusting bolt, the nylon piece wraps the crystal and is placed in the clamp, the crystal is clamped and fixed through the adjusting bolt, and the crystal is flatly placed on an X-ray orientation device with an orientation base. The angle of an X-ray transmitting tube and the angle of an X-ray receiving tube are adjusted according to the diffraction theta angle value of the end face of the crystal needing to be orientated, the deflection angle of the end face of the crystal can be adjusted by rotating the adjusting bolt according to the diffraction theta angle value of the end face of the crystal tested by the X-ray, and the crystal end face orientation can be completed on the clamp by utilizing the clamp. And secondary orientation and gluing operation can be omitted, the processing efficiency is improved, and the operation difficulty is reduced.

In a packaging bag (10) including multilayer films for packaging (5) including a heat-sealable resin layer (3) on a surface and formed by bonding two of the heat-sealable resin layers (3) of the multilayer films for packaging (5), oriented crystals are present in a seal portion (7) formed by bonding the heat-sealable resin layers (3).

The invention discloses a magnetic alloy preparation method based on a four-arc pulling orientation crystal, a magnetic alloy and application, and belongs to the field of magnetic materials. The technical key points are as follows: a four-arc pulling oriented crystal method is adopted, and the method comprises the following steps: firstly, putting an obtained polycrystalline material into a rotatable water-cooled copper crucible, adjusting the positions of four arcs relative to a sample, and closing a cavity; then, a vacuum pump system is started, and the vacuum degree in the furnace is increased to 5 * 10 <-4 > Pa; thirdly, a certain amount of argon is introduced, and the air pressure of the cavity is maintained to be 5 * 10 < 2 > Pa; and then, removing oxygen in the cavity, turning on current switches of four electric arcs above the sample, slowly increasing the current to melt the raw material, and after the raw material is completely melted, immersing the lifting rod into the melted raw material to ensure that the raw material is in full contact with the melt, rotating and lifting the lifting rod, and gradually cooling and crystallizing the melt along with the lifting of the lifting rod to form an oriented crystal.

The invention relates to the technical field of electrolytic copper foils, in particular to a heat-resistant copper foil and a preparation method thereof, the volume ratio of (220) crystal face texture in the heat-resistant copper foil is 70%-100%, and 80%-100% of crystal boundaries are arranged along the [110] crystal orientation. By forming a high-proportion (220) texture, an approximately single-oriented crystal structure is further formed, and the high-purity texture enables crystal boundaries to be highly and orderly arranged along the [110] crystal orientation; through the synergistic effect of the submicron columnar crystal structure and the single (220) texture, the copper foil is endowed with excellent thermal stability. Moreover, after annealing, the grain size fluctuation is small, the (220) texture retention rate is greater than or equal to 70%, and the grain coarsening rate which is more than 50% superior to that of similar copper foils in the prior art can be realized; the atomic arrangement characteristic of the (220) crystal face is combined with the columnar crystal structure, so that the copper foil has excellent ductility while keeping high strength, the heat stability, strength and ductility of the copper foil under the complex heat exchange condition are improved, and the requirements of the high-end field for the performance of the copper foil are met.

The present invention provides a polyethylene naphthalate (PEN) film and a preparation method thereof, comprising a three-step process of pre-crystallization, rapid thermal stretching, and annealing. The present invention heats a PEN cast sheet to a temperature range above the glass transition temperature and maintains the temperature for 15-60 minutes to form small-sized crystallites inside the PEN cast sheet. These crystallites can serve as nucleation points for stretch-induced crystallization, thereby improving the crystallization rate and uniformity during subsequent stretching. The crystallized PEN cast sheet is then rapidly stretched at 140-170°C at a deformation rate of 0.1-1s. ‑1 The PEN film obtained after rapid hot stretching is then annealed at a temperature between 150°C and 180°C. This helps further refine the oriented crystal structure, increase crystallinity, and effectively release internal stress, thereby improving the film's dimensional stability and heat resistance.

A substrate, an electronic device, and a module are provided. The substrate provided by embodiments includes a carrier substrate formed from a polycrystalline material having a main support surface, where an observation region on the main support surface or on any transverse interface parallel to the main support surface contains (101)-oriented crystal grains, and a proportion of the (101)-oriented crystal grains in the observation region is 7% to 20% of a total number of grains in the observation region, and where the observation region measures 150 μm×150 μm.

The application belongs to the technical field of perovskite solar cells, and particularly relates to a two-dimensional perovskite vertically-grown solar cell and a preparation method thereof. The solar cell comprises, from bottom to top, a substrate layer, an electron transport layer, a perovskite absorption layer, a hole transport layer and a metal top electrode layer. The electron transport layer comprises a tin dioxide film and tin dioxide nanoparticles, and the tin dioxide nanoparticles are arranged on the side of the perovskite absorption layer of the tin dioxide film. The perovskite absorption layer comprises a two-dimensional perovskite material layer and a three-dimensional perovskite material layer, the two-dimensional perovskite material layer is in contact with the tin dioxide nanoparticles, and the three-dimensional perovskite material layer is in contact with the hole transport layer. The rough surface of the tin dioxide nanoparticles, the two-dimensional perovskite material layer and the three-dimensional perovskite material layer realize vertically-oriented crystal growth, reduce the existence of grain boundaries, improve the diffusion length and migration efficiency of carriers, and thus improve the photoelectric conversion efficiency.

Provided is a biaxially oriented polypropylene film that has high stiffness and can easily retain a bag shape when made into a packaging bag even if the film is made thinner, and at the same time, that can maintain water vapor barrier properties even if the film is made thinner, and has few wrinkles in and around the sealed portion when heat-sealed to make a packaging body. The biaxially oriented polypropylene film satisfies the following (1) and (2): (1) a half width of a peak derived from an oriented crystal in a width direction in angular dependency of a (110) plane of polypropyleneα-type crystal obtained by wide-angle X-ray diffraction measurement is 26° or smaller; (2) the ratio of (III) to the total of a crystalline component (I), a restrained amorphous component (II), and an unrestrained amorphous component (III) classified by pulse NMR according to solid-echo method is 7% or lower.

The present invention discloses a highly conductive corrosion-resistant composite coating and its preparation method and application. The highly conductive corrosion-resistant composite coating comprises a chromium transition layer and a graphite-like amorphous carbon layer sequentially formed on the surface of a metal bipolar plate as a substrate; wherein the preferred crystal plane orientation of the chromium transition layer is (110), and the texture coefficient of the preferred oriented crystal plane (110) in the chromium transition layer is above 0.8. The graphite-like amorphous carbon coating in the highly conductive corrosion-resistant composite coating provided by the present invention has high conductivity and corrosion resistance. The chromium transition layer with preferential growth of a densely packed plane (110) is prepared by high-power pulsed magnetron sputtering technology under low negative bias, which effectively improves the density of the coating, thereby achieving long-term protection of the metal bipolar plate. At the same time, the (110) preferentially oriented chromium transition layer has a significant catalytic effect on the graphite-like amorphous carbon layer, which helps to improve sp 2 content, thereby effectively reducing the contact resistance of the metal bipolar plate.

An ultra-high thermal-conductivity diamond is provided. The ultra-high thermal-conductivity diamond is polycrystalline diamond with a highly oriented crystals along <110> or <100> direction. It has a diameter of ≥100 mm in linear dimension and a thickness of ≥300 m, a thermal conductivity of ≥1800 W / (m·K) at 298K, and at least one surface with Ra≤10 nm, and further includes one or more of the following features: a content of nitrogen impurity ≤100 ppb, a dielectric constant ≥5.4 a dielectric loss tangent tanδ≤6×10−5, a volume resistivity ≥1×1011 Ωm, and a breakdown voltage ≥1000 V. The method for synthesizing the ultra-high thermal-conductivity diamond includes: providing a substrate for the diamond growth and a microwave plasma reactor, and performing the epitaxial growth of the ultra-high thermal-conductivity diamond on the substrate surface by using the reactor.

This invention discloses a gold-based gas diffusion electrode and its preparation method for the electrochemical synthesis of hydrogen peroxide, belonging to the field of electrochemical catalysis and synthesis technology. The gold-based gas diffusion electrode comprises a polyethylene film substrate and a gold catalyst layer supported on the substrate surface. The gold catalyst layer is formed in situ by magnetron sputtering and has a crystal structure with gold {200} crystal planes as the main exposed or predominantly oriented crystal planes. By controlling the sputtering deposition conditions, gold layer thickness, and interface structure, a gas diffusion electrode with low gold loading, high oxygen transport efficiency, and high two-electron oxygen reduction selectivity can be obtained. When used for the oxygen reduction electrosynthesis of hydrogen peroxide, this electrode can achieve high hydrogen peroxide selectivity, mass activity, and operational stability with relatively low amounts of noble metals. The preparation method of this invention is simple, requires no complex post-processing or additional binders, and is suitable for the electrochemical synthesis of hydrogen peroxide in acidic, neutral, or alkaline electrolyte systems.

The invention relates to the field of semiconductor materials, in particular to a preparation method of a c-axis oriented crystal IGZO film. According to the preparation method of the c-axis orientation crystal IGZO thin film, atomic layer deposition equipment is utilized, the GaO layer is formed through deposition firstly, then the ZnO layer is formed through deposition, and then the InO layer is formed through deposition, accurate interlayer covering can be achieved, and under the condition that additional process treatment is not needed, the thickness of the thin film can be reduced. The proportion of Zn / (In + Ga + Zn) can be accurately controlled by controlling technological parameters (such as the source bottle temperature, the introduction time, the gas flow and the cycle index of a zinc source) in the deposition process, and then the crystallinity and the electrical property of IGZO are improved.

The present invention provides a substrate and printed circuit board containing a nano-twin metal layer that can easily accommodate fine pitches such as microbumps and offer superior reliability. [Solution] The present invention relates to a substrate comprising a substrate, a seed layer disposed on the substrate, and a nanotwin metal layer disposed on the seed layer, wherein the seed layer comprises a randomly oriented crystal structure, a crystal structure preferentially oriented on the (200) plane and / or a crystal structure preferentially oriented on the (220) plane, and a printed circuit board formed using the same.