41 results about "Oriented crystal" patented technology

The invention discloses a forming method of an ultra-high molecular weight polyethylene strip, which comprises the following steps: step 1, mixing ultra-high molecular weight polyethylene resin and a low molecular weight solvent to prepare a uniform suspension, then extruding at high temperature, and cooling and shaping to obtain a gel film; step 2, carrying out single-axis high-temperature ultra-time hot stretching on the gel film; 3, extracting the stretched gel film to remove the low-molecular-weight solvent, and drying with hot air to obtain a dried film; 4, longitudinally cutting the dry film to form strips; and step 5, carrying out low-multiple uniaxial thermal stretching on the strip to remove pores so as to obtain the final ultra-high molecular weight polyethylene strip. The gel film is subjected to uniaxial hot stretching under the condition that a low-molecular-weight solvent is not removed, and the low-molecular-weight solvent is beneficial to promoting orientation of fibrous extended-chain crystals reserved in the gel film and formation of high-orientation crystals such as subsequent extended-chain crystals, so that the tensile mechanical property and other properties of a final strip are improved.

An ultra-high thermal-conductivity diamond is provided. The ultra-high thermal-conductivity diamond is polycrystalline diamond with a highly oriented crystals along <110> or <100> direction. It has a diameter of ≥100 mm in linear dimension and a thickness of ≥300 m, a thermal conductivity of ≥1800 W / (m·K) at 298K, and at least one surface with Ra≤10 nm, and further includes one or more of the following features: a content of nitrogen impurity ≤100 ppb, a dielectric constant ≥5.4 a dielectric loss tangent tanδ≤6×10−5, a volume resistivity ≥1×1011 Ωm, and a breakdown voltage ≥1000 V. The method for synthesizing the ultra-high thermal-conductivity diamond includes: providing a substrate for the diamond growth and a microwave plasma reactor, and performing the epitaxial growth of the ultra-high thermal-conductivity diamond on the substrate surface by using the reactor.

The invention relates to the technical field of thermoelectric semiconductor materials, and discloses a CuAgSe-based thermoelectric semiconductor crystal and a preparation method thereof.The CuAgSe-based thermoelectric semiconductor crystal is prepared from elementary substance Cu, elementary substance Ag and elementary substance Se through melting treatment and a Bridgman growth method; compared with a CuAgSe-based thermoelectric semiconductor crystal prepared by a pressure sintering method, the material has the advantages of high conductivity, slightly low Zebeck coefficient, equivalent heat conductivity, high thermoelectric figure of merit and high thermoelectric performance; according to the method, the cooling gradient and the movement rate of a polycrystalline material in the cooling gradient are controlled to enable the crystal to grow into the CuAgSe crystal with high single orientation, the content of a second phase in the crystal can be remarkably reduced by controlling the cooling gradient, the CuAgSe crystal with high single orientation can be directly obtained, and the second phase does not need to be removed; and the utilization rate of the CuAgSe polycrystalline raw material is obviously improved.

A method for manufacturing a piezoelectric film including a monocrystalline or polycrystalline piezoelectric material in which a particular oriented crystal axis is inclined from a direction perpendicular or substantially perpendicular to the film, includes preparing a substrate including a single crystal with a same rotational symmetry about a particular substrate crystal axis as a rotational symmetry about the particular oriented crystal axis in the piezoelectric material, and the particular substrate crystal axis has a same inclination as an inclination of the particular oriented crystal axis, and forming a piezoelectric film including the piezoelectric material on the substrate by an epitaxial process.

The present invention discloses a photoanode material applied to the synchronous treatment of ammonia nitrogen and refractory organic compounds in high-chloride wastewater by photoelectrocatalysis. It is characterized in that tungsten oxide is in-situ loaded on doped-fluorine SnO2 conductive glass in sequence by layer, oriented crystal plane bismuth vanadate with a carrier space pre-separation structure is hydrothermally grown, and cobalt borate salt cocatalyst is photo-assisted electro-deposited, which greatly improves the photoelectric performance from multiple perspectives such as the effective separation of photo-generated electrons and holes, the charge transfer resistance at the photoanode / solution interface, and the conversion rate of photo-generated holes to redox equivalent substances. The photoelectrochemical system using it as the photoanode realizes the in-situ generation of strongly oxidizing active chlorine by using chloride ions, promotes the oxidation of refractory organic compounds and ammonia nitrogen, effectively controls the generation amount of nitrate nitrogen at the same time, improves the denitrification efficiency, and has the advantages of high efficiency and stability in the synchronous removal process of ammonia nitrogen and refractory organic compounds in high-chloride wastewater.

The invention provides a perovskite thin film and a perovskite solar cell, and belongs to the field of photovoltaic technology. The perovskite thin film comprises vertical orientation crystal grains, and the vertical orientation crystal grains are composed of a plurality of vertical sheet structures. According to the perovskite thin film provided by the invention, the vertical orientation crystal grains are composed of the plurality of vertical sheet structures, the carrier transmission paths among the plurality of vertical sheet structures are relatively short, and the preferred orientation crystal structure weakens the scattering effect on carriers, so that the mobility of the carriers is improved, and the performance of the perovskite thin film is improved. And because the grain boundary interface is less and the defect concentration is reduced, the service life of electrons in the perovskite thin film is longer, the diffusion distance is more obvious, and the opportunity of forming current by long-distance migration of the electrons is increased. Therefore, the structure of the perovskite thin film achieves the effects of low defect state and high carrier transmission efficiency, the improvement of the battery efficiency is facilitated, and the improvement of the battery stability is also facilitated through the compact and orderly arranged crystal grains and fewer defect sites.

The invention discloses a method for preparing an aluminum nitride crystal by controlling nucleation of the aluminum nitride crystal in a reverse temperature field, and belongs to the technical field of semiconductor crystal materials. The method comprises the following steps: putting a raw material for growing aluminum nitride crystals into a crucible, putting the crucible device into aluminum nitride crystal growth equipment, and sealing the aluminum nitride crystal growth equipment; controlling the high-purity nitrogen atmosphere in the aluminum nitride crystal growth equipment and keeping the pressure intensity, starting a heating program to heat the interior of the crucible to a preset temperature, keeping the inverse axial temperature gradient from the raw material area to the crystal growth area in the heating process, and keeping the temperature for aluminum nitride nucleation; after nucleation is finished, raising the temperature to a crystal growth temperature, controlling the temperature gradient from the raw material area to the crystal growth area to be positive axial temperature gradient, and keeping the temperature to grow the aluminum nitride crystal; and after heat preservation is finished, cooling to room temperature to obtain the aluminum nitride crystal. According to the method, the reverse temperature field is applied to the growth region in the nucleation stage, so that an uncontrolled nucleation process is effectively inhibited, and a high-quality single-orientation crystal nucleus is provided for growth of aluminum nitride crystals.

A method of forming a low resistivity ruthenium (Ru) thin film includes depositing ruthenium onto a substrate by deposition with an auxiliary ion beam in a process chamber having a reactive gas species and an inert gas species. The temperature of the substrate is at least 250 DEG C. The thickness of the obtained ruthenium thin film does not exceed 30 nm, the resistivity is smaller than 12 [mu] omega.cm, and the crystal structure comprises (0001) oriented crystal grains. The electrical resistivity is different under different thicknesses, for example, the electrical resistivity of a film of 50 nm or more is less than 9 [mu] Omega * cm, the electrical resistivity of a film of 35 nm or more is less than 9.5 [mu] Omega * cm, the electrical resistivity of a film of 20 nm or more is less than 11 [mu] Omega * cm, the electrical resistivity of a film of 10 nm or more is less than 15 [mu] Omega * cm, and the electrical resistivity of a film of 2 nm or more is less than 20 [mu] Omega * cm. The average crystal size of the grains is at least three times the thickness of the film.

The application discloses a kind of directional crystal mould shell automatic detection cleaning system.In the application, by transient air pressure excitation and multi-scale wavelet domain digital speckle correlation detection, the micro crack identification ability is identified from surface opening defect to sub-surface strain anomaly stage, which significantly improves the detection sensitivity of hidden cracks and wall thickness thinning defects, and replaces artificial visual experience determination with full-field strain cloud quantification grading, which significantly reduces the missed detection rate and the quality risk caused by human error. Strain-cleanness dual-factor fusion evaluation simultaneously completes the judgment of structural integrity and internal cavity cleanliness at the same station, improving the completeness and automation of defect evaluation, reducing the drag of batch offline sampling and chemical permeation operation on production rhythm, and eliminating the need for fluorescent penetrant immersion and cleaning process with transient pulse excitation method, which improves the single-piece detection rhythm and reduces the cost of hazardous chemicals procurement, storage and waste liquid treatment.

The invention discloses a transparent conductive film with a hardness gradient composite structure and a flexible electronic device, and relates to the technical field of flexible electronics. The transparent conductive thin film comprises a flexible substrate, a gradient buffer layer and a metal oxide conductive layer, and the gradient buffer layer forms a hardness gradient which is gradually increased from the flexible substrate to the metal oxide conductive layer; the gradient buffer layer takes methane, silane and nitrous oxide as gas sources and is prepared by adopting a PECVD (Plasma Enhanced Chemical Vapor Deposition) process, and in the deposition process, the flow of the methane is configured to be linearly decreased, and the flow of the silane and the nitrous oxide is configured to be linearly increased; according to the invention, the gradient buffer layer effectively obstructs water vapor and organic volatile matters released by the flexible substrate, the hardness gradient of the gradient buffer layer promotes the formation of a metal oxide highly oriented crystal structure, and the interface stress is improved; the prepared transparent conductive film has the remarkable advantages of low defect density, good conductivity, high bending resistance and good long-term stability.

To provide a grain-oriented electrical steel sheet that has excellent magnetic properties due to refined secondary recrystallization and at the same time has little variation in properties within the coil. [Solution] Grain-oriented electrical steel sheets are made of {110} <001> The size of the oriented crystal grains satisfies the following formula 1: <001> It is characterized in that the area fraction of crystal grains with angles deviating from the orientation by 3° or less is 60% or more. <Expression 1> W / L≦1.5 (In the above formula 1, W is the diameter in the TD direction (width direction of the secondary recrystallized grain), and L is the diameter in the RD direction (longitudinal direction of the secondary recrystallized grain).)

The invention belongs to the field of carbon fiber composite materials, and discloses a lightweight superconductive carbon fiber composite cable and a preparation method thereof, the cable is composed of a carbon fiber bundle layer, a multifunctional composite coating, a superconductive functional layer, an insulating layer, a shielding layer and a protective layer in sequence; the multifunctional composite coating is prepared from 60 to 65 parts of a polyamide acid precursor, 8 to 12 parts of 4-aminopropyltrimethoxysilane, 1 to 2 parts of glutaraldehyde, 3 to 5 parts of graphene nanosheets and 15 to 20 parts of a YBaCuOx precursor; a YBaCuOx ceramic layer with oriented crystals and continuous micro-channel cooling is obtained on the surface of the composite coating in situ by the superconductive functional layer through a pre-sintering, calcining and annealing cycle process combining sol-gel deposition and supercritical COdrying; the prepared cable has the advantages of high critical current density, zero resistance loss, excellent thermal-mechanical stability and extremely low self weight, and is suitable for the fields of high-frequency and long-distance lossless power transmission and low-temperature magnetic resonance.

The invention discloses a zero-expansion glass substrate based on oriented crystal growth and a preparation method thereof, and belongs to the technical field of glass. According to the technical scheme, the quartz stone glass comprises an alkali-free glass matrix and quartz stone crystals directionally growing along the c-axis, wherein the content of the quartz stone crystals is 10-30 wt.%; wherein the alkali-free glass matrix is prepared from the following components in percentage by mass: 60 to 70 percent of SiO2, 10 to 18 percent of Al2O3, 5 to 10 percent of B2O3, 1 to 3 percent of MgO, 1 to 3 percent of CaO, 0.5 to 2 percent of TiO2, 0.5 to 2 percent of ZrO2, 1 to 2 percent of SnO2, 1.5 to 3 percent of Ga2O3 and 0.8 to 1.5 percent of Tb4O7. By counteracting the c-axis negative expansion of the quartz crystal and the positive expansion of the glass matrix, the macroscopic zero-expansion characteristic is realized, the thermal expansion problem of equipment is solved, the precision is improved, and the service life is prolonged.

A stack of crystals as a bright source of polarization-entangled photons, including: a plurality of first birefringent phase-matched crystals having a first optical axis; and a corresponding plurality of second birefringent phase-matched crystals having a second optical axis; wherein the plurality of the first and second crystals are alternately stacked to form a periodic crystal structure, with the first optical axis being offset from the second optical axis by a desired angle.

The invention relates to the technical field of semiconductors, and provides a high-quality directional remote epitaxy method and a stripping transfer method of an indium phosphide single crystal film. The surface of an indium phosphide single-crystal substrate is covered with a single-layer graphene film, and then the indium phosphide single-crystal film is prepared by adopting a two-stage vapor phase epitaxy method. And then the indium phosphide single crystal film is stripped and transferred to the surface of the silicon substrate. A two-stage vapor phase epitaxy method is adopted, so that graphene can be protected from being damaged, and the crystal quality of an epitaxial film is improved; by utilizing the thin-layer characteristic and the electric penetrability of the single-layer graphene, the indium phosphide single-crystal thin film with the oriented crystal face can be prepared by replacing substrates with different crystal faces; meanwhile, the graphene / epitaxial layer interface is Van der Waals force, stripping can be achieved through mechanical force, and then transfer of the indium phosphide single crystal thin film is achieved. In conclusion, stripping transfer and silicon-based heterogeneous integration of the indium phosphide single crystal thin film, the heterojunction thin film and even the device in specific orientation can be achieved, and the application prospect is wide.

This invention proposes a method for preparing a composite substrate for semiconductor device manufacturing. The steps include: placing raw carbon into a reaction chamber under a hydrogen atmosphere, evacuating the reaction chamber to a vacuum, heating to 1000-1500℃ (e.g., 1000℃, 1200℃, or 1500℃), holding at this temperature for 1-3 hours, and cooling and cleaning to obtain a carbon substrate; grinding and mixing a tantalum source, tantalum fluoride, and flux to obtain a coating powder; transferring the coating powder to a reaction chamber with a pulsed electric field for pulsed electric field-assisted vapor deposition, and cooling to obtain a tantalum carbide pre-coating material with oriented crystal orientation; transferring the tantalum carbide pre-coating material to a high-temperature sintering furnace and heating at 1800-2400℃ in an inert atmosphere for 0.5-6 hours to obtain a composite substrate, which is used for semiconductor device manufacturing. Through the oriented crystal orientation, the tantalum carbide coating achieves higher electrical and thermal conductivity.

A novel high temperature thermal sensing method and device is disclosed that can employ a dual-sensing platinum resistor encased in a mono-crystalline alpha-alumina (sapphire) substrate. The device can comprise four platinum trace elements, oriented with 90° rotational symmetry atop a 1120 oriented crystal lattice substrate. The resistance temperature detectors (RTD) temperature measurement calibration can then be monitored for drift and corrected by comparing the differential strain-derived measurement of temperature to the temperature derived from the RTD measurement. This can allow the device to self-calibrate via comparison of two functionally independent measures of electron mobility and operate in extreme environments which have previously caused RTD sensors to drift from their initial calibration and introduce an undefined measurement error.

The utility model relates to the technical field of detection devices, in particular to an auxiliary tool for detecting the deviation degree of an oriented crystal, which is used for assisting in detecting the deviation degree of an oriented crystal part and comprises a base, a supporting rod and a laser pen application assembly. A laser pen application assembly is installed at the top end of the supporting rod. The auxiliary detection tool is simple in overall structure, convenient to construct and high in practicability, the linear bearing slides on the sliding guide rail, the irradiation position of the laser pen is adjusted by rotating the mounting frame, the detection efficiency is greatly improved, rays of the laser pen serve as marking lines, the influence of the curved surface of a part is avoided, and the accuracy of detection data is greatly improved.

A crystal stack as a polarization entangled photon bright source comprises: a plurality of first birefringence phase matching crystals having a first optical axis; and a respective plurality of second birefringent phase matching crystals having a second optical axis; wherein the plurality of first and second crystals are alternately stacked to form a periodic crystal structure wherein the first optical axis is offset from the second optical axis by a desired angle.

The present invention relates to a packaging bag (10), characterized in that a multilayer film (5) for packaging with a heat-sealable resin layer (3) on its surface is used, which is formed by bonding the heat-sealable resin layers (3) of the film (5) together, and in the packaging bag (10), there are oriented crystals in the sealing part (7) formed by bonding the heat-sealable resin layers (3) together.

The present invention proposes a method for processing a SiC substrate without a positioning edge, including: orienting the outer circle of a SiC crystal; crystal cutting; cutting and taking a piece: baking the cutting piece from a cutting base, taking out and marking the carbon-silicon surface of the head piece or tail piece of the cutting piece, and cleaning the cutting piece to remove the cutting fluid remaining on the surface; head and tail piece orientation: orienting the head and tail cutting pieces of the SiC crystal, verifying the [1-100] and [11-20] directions of the marked head piece or tail piece; non-head and tail piece orientation: overlapping the non-head and tail pieces with the head piece and / or tail piece so that their knife marks overlap, and then orienting along the off-axis direction of the wafer to determine the off-axis direction and polarity plane of the wafer; carbon / silicon surface marking and crystal direction marking; performing subsequent process processing on the marked wafer to obtain a SiC substrate without a positioning edge. When the SiC substrate without a positioning edge prepared in the present invention is used as a seed crystal or substrate to grow SiC crystals or epitaxial wafers, it can effectively reduce defects such as micropipes and stress in the crystal, and greatly improve the quality of the material.

The present invention relates to an injection molded body of a polymer piezoelectric material, a piezoelectric element, a manufacturing apparatus and a manufacturing method for an injection molded body of a polymer piezoelectric material, and provides an injection molded body of a polymer piezoelectric material and a piezoelectric element that exhibit a piezoelectric phenomenon having a stress application direction in a direction rotating around the b-axis and are easily applicable to practical devices, etc., and a manufacturing apparatus and a manufacturing method for an injection molded body of a polymer piezoelectric material that can manufacture the injection molded body of a polymer piezoelectric material. An injection molded body of a polymer piezoelectric material, characterized in that it has piezoelectricity and contains a helical chiral polymer crystal, the helical chiral polymer crystal is composed of a polymer chain, has a unit lattice with the a-axis, b-axis and c-axis as crystal axes, and the lengths of the crystal axes are b-axis < a-axis < c-axis, the c-axis is parallel to the long-chain direction of the polymer chain, and the helical chiral polymer crystal is a b-axis uniaxially oriented crystal.

The utility model aims to provide a piezoelectric crystal processing orientation clamp, which is used for orienting the end face of a crystal and is characterized by comprising an orientation base, a clamp, an adjusting bolt, a bolt sleeve and a nylon sheet. The adjusting bolt is installed on the clamp through a screw hole, the bolt sleeve is installed on the front end face of the adjusting bolt, the nylon piece wraps the crystal and is placed in the clamp, the crystal is clamped and fixed through the adjusting bolt, and the crystal is flatly placed on an X-ray orientation device with an orientation base. The angle of an X-ray transmitting tube and the angle of an X-ray receiving tube are adjusted according to the diffraction theta angle value of the end face of the crystal needing to be orientated, the deflection angle of the end face of the crystal can be adjusted by rotating the adjusting bolt according to the diffraction theta angle value of the end face of the crystal tested by the X-ray, and the crystal end face orientation can be completed on the clamp by utilizing the clamp. And secondary orientation and gluing operation can be omitted, the processing efficiency is improved, and the operation difficulty is reduced.

To provide a novel metal oxide.SOLUTION: A metal oxide including crystals which are oriented to a C-axis includes: indium; an element M (M is one of gallium, aluminum, yttrium, and tin); and zinc. The diffusion length of hydrogen in the metal oxide is 200 nm at a maximum. The absorption at a local level measured by CPM in the metal oxide is 0.01 / cm at a maximum. Also, the diffusion length of hydrogen is calculated under the condition that the temperature is 400°C and length of time is one hour.SELECTED DRAWING: Figure 1

In a packaging bag (10) including multilayer films for packaging (5) including a heat-sealable resin layer (3) on a surface and formed by bonding two of the heat-sealable resin layers (3) of the multilayer films for packaging (5), oriented crystals are present in a seal portion (7) formed by bonding the heat-sealable resin layers (3).

The invention relates to the technical field of solid-state electrolytes for all-solid-state lithium batteries, and discloses a preparation method and application of a high-performance oriented crystal nanowire composite solid-state electrolyte, and the preparation method comprises the following steps: preparing a PVP / LLTO-CNW coaxial nanowire by adopting a PVP spinning solution and an LLTO precursor solution through a coaxial electrostatic spinning technology; the PVP / LLTO-CNW coaxial nanowire is sintered in the air atmosphere, and an LLTO nanowire frame with an oriented crystal structure is obtained; and preparing a polymer electrolyte: repeatedly dropwise adding a polymer electrolyte solution into the LLTO nanowire frame with the oriented crystal structure in an inert gas atmosphere, drying until the LLTO nanowire frame is completely embedded into a polymer matrix, and performing vacuum drying to obtain the high-performance oriented crystal nanowire composite solid electrolyte. The high-performance oriented crystal nanowire composite solid electrolyte prepared by the preparation method disclosed by the invention has more excellent lithium ion transmission performance and stability.

The invention discloses a magnetic alloy preparation method based on a four-arc pulling orientation crystal, a magnetic alloy and application, and belongs to the field of magnetic materials. The technical key points are as follows: a four-arc pulling oriented crystal method is adopted, and the method comprises the following steps: firstly, putting an obtained polycrystalline material into a rotatable water-cooled copper crucible, adjusting the positions of four arcs relative to a sample, and closing a cavity; then, a vacuum pump system is started, and the vacuum degree in the furnace is increased to 5 * 10 <-4 > Pa; thirdly, a certain amount of argon is introduced, and the air pressure of the cavity is maintained to be 5 * 10 < 2 > Pa; and then, removing oxygen in the cavity, turning on current switches of four electric arcs above the sample, slowly increasing the current to melt the raw material, and after the raw material is completely melted, immersing the lifting rod into the melted raw material to ensure that the raw material is in full contact with the melt, rotating and lifting the lifting rod, and gradually cooling and crystallizing the melt along with the lifting of the lifting rod to form an oriented crystal.

A coated tool (1) comprising: a base element (3) having a first surface (7), and a coating layer (5) arranged on the first surface (7), where the coating layer (5) a first layer (17) comprising a plurality of α-Al2O3 crystal particles (15), and a second layer (19) comprising a titanium component, being in contact with the first layer (17) and being arranged between the first layer (17) and the base element (3), and at least one of the α-Al2O3 crystal particles (15) is a differently oriented crystal particle (15a) which has at least two differently oriented regions (15aa, 15ab) with different orientations.

The invention relates to the technical field of electrolytic copper foils, in particular to a heat-resistant copper foil and a preparation method thereof, the volume ratio of (220) crystal face texture in the heat-resistant copper foil is 70%-100%, and 80%-100% of crystal boundaries are arranged along the [110] crystal orientation. By forming a high-proportion (220) texture, an approximately single-oriented crystal structure is further formed, and the high-purity texture enables crystal boundaries to be highly and orderly arranged along the [110] crystal orientation; through the synergistic effect of the submicron columnar crystal structure and the single (220) texture, the copper foil is endowed with excellent thermal stability. Moreover, after annealing, the grain size fluctuation is small, the (220) texture retention rate is greater than or equal to 70%, and the grain coarsening rate which is more than 50% superior to that of similar copper foils in the prior art can be realized; the atomic arrangement characteristic of the (220) crystal face is combined with the columnar crystal structure, so that the copper foil has excellent ductility while keeping high strength, the heat stability, strength and ductility of the copper foil under the complex heat exchange condition are improved, and the requirements of the high-end field for the performance of the copper foil are met.

The present invention provides a polyethylene naphthalate (PEN) film and a preparation method thereof, comprising a three-step process of pre-crystallization, rapid thermal stretching, and annealing. The present invention heats a PEN cast sheet to a temperature range above the glass transition temperature and maintains the temperature for 15-60 minutes to form small-sized crystallites inside the PEN cast sheet. These crystallites can serve as nucleation points for stretch-induced crystallization, thereby improving the crystallization rate and uniformity during subsequent stretching. The crystallized PEN cast sheet is then rapidly stretched at 140-170°C at a deformation rate of 0.1-1s. ‑1 The PEN film obtained after rapid hot stretching is then annealed at a temperature between 150°C and 180°C. This helps further refine the oriented crystal structure, increase crystallinity, and effectively release internal stress, thereby improving the film's dimensional stability and heat resistance.