Method for manufacturing metal laminated substrate for semiconductor element formation and metal laminated substrate for semiconductor element formation

a technology of metal laminated substrates and semiconductor elements, which is applied in the direction of metallic pattern materials, chemically reactive gases, crystal growth processes, etc., can solve the problems of high cost of ni—w alloys, difficult handling of monocrystalline wafers made of si or the like during the conveyance of wafers, and inability to form monocrystalline wafers by continuous manufacturing methods such as reel-to-reel methods, etc., to achieve low cost, high thickness accuracy, and high reduction

US20110290380A1Inactive Publication Date: 2011-12-01TOYO KOHAN CO LTD
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
Publication Date
2011-12-01
Estimated Expiration
Not applicable · inactive patent

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Abstract

Disclosed is a metal laminated substrate for forming an epitaxial growth film for forming a semiconductor element having high biaxial crystal orientation on a surface of a metal substrate and a method of manufacturing the metal laminated substrate. The manufacturing method includes the steps of activating at least one surface of a metal plate T1 by sputter etching or the like; activating at least one surface of a metal foil T2 made of Cu or a Cu alloy which is cold-rolled at a rolling reduction of 90% or more; laminating the metal plate and the metal foil such that an activated surface of the metal plate and an activated surface of the metal foil face each other in an opposed manner and applying cold rolling to the metal plate and the metal foil which are laminated to each other at a rolling reduction of 10% or less, for example; and biaxially orienting crystals of the metal foil by heat treatment at a temperature of not lower than 150° C. and not higher than 1000° C.
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Description

TECHNICAL FIELD

[0001] The present invention relates to a method of manufacturing a metal laminated substrate for forming an epitaxial growth film for forming a semiconductor element, and a metal laminated substrate for forming an epitaxial growth film for forming a semiconductor element.BACKGROUND ART

[0002] To obtain an excellent semiconductor element, it is necessary to form an epitaxial growth film having high orientation on a substrate.

[0003] For this end, conventionally, as a substrate for an epitaxial growth film, a monocrystalline wafer made of monocrystalline silicon (Si), monocrystalline GaAs, monocrystalline sapphire (Al2O3) or the like having an excellent crystal orientation has been used.

[0004] However, the monocrystalline wafer made of these materials is a cut plate having a size of approximately 300 mmφ at most, and such a monocrystalline wafer cannot be formed by a continuous manufacturing method such as a reel-to-reel method. Further, also the strength of Si or the like i...

Examples

example 1

[0071]Hereinafter, an embodiment of the present invention is exemplified, wherein properties of the manufactured metal laminated substrate are explained. A high-reduction rolled Cu foil (metal foil) having a width of 200 mm and a thickness of 18 μm and an SUS316L plate (metal plate) having a thickness of 100 μm are bonded to each other by a room-temperature surface activation bonding method and, thereafter, the high-reduction rolled Cu foil and the SUS316L plate are subjected to heat treatment at a temperature of 200° C. to 1000° C. for five minutes thus acquiring the metal laminated substrate.

[0072]Table 1 shows a rate at which a Cu (200) surface is made parallel to a Cu foil surface, that is, a crystal orientation rate (a diffraction peak strength rate of a (200) surface at a θ / 2θ diffraction peak measured by X-ray diffraction: I(200) / ΣI(hkl)×100(%)), and a Δφ° (φ scan peak (an average value of half value widths of 4 peaks at α=35°) obtained by an Ni (111) pole figure in accordanc...