113results about How to "Smooth interface" patented technology

A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.

A system and method for representing, storing and retrieving real-world knowledge on a computer or network of computers is disclosed. Knowledge is broken down into permanent atomic “facts” which can be stored in a standard relational database and processed very efficiently. It also provides for the efficient querying of a knowledge base, efficient inference of new knowledge and translation into and out of natural language. Queries can also be processed with full natural language explanations of where the answers came from. The method can also be used in a distributed fashion enabling the system to be a large network of computers and the technology can be integrated into a web browser adding to the browser's functionality.

A delivery system including a restraining member maintains a collapsed implant in its collapsed state for delivery through a small passageway to a desired site in a mammalian body. Once the implant is positioned at the desired site, the restraining member is released so that the stent may expand or be expanded to its expanded state. In a preferred embodiment, the restraining member comprises a sheet of material that surrounds at least a portion of the collapsed stent. Portions of the restraining member are releasably coupled to one another with a low profile thread-like member or suture.

Methods for treating anatomic tissue defects such as a patent foramen ovale generally involve positioning a distal end of a catheter device at the site of the defect, exposing a housing and energy transmission member from the distal end of the catheter, engaging the housing with tissues at the site of the defect, applying suction or other approximating tool to the tissue via the housing to bring the tissue together, and applying energy to the tissue with the energy transmission member or to deliver a clip or fixation device to substantially close the defect. Apparatus generally include a catheter body, a housing extending from a distal end of the catheter body for engaging tissue at the site of the defect, and further adapted to house a fusing or fixation device such as an energy transmission member adjacent a distal end of the housing, or a clip or fixation delivery element.

A low impact foundation system requiring little or no excavation, and allowing for the preservation of the soil and drainage characteristics of the site upon which it is erected. The system utilizes small obliquely driven piles in combination with a pre-cast component designed to engage a standard foundation wall.

In an interface unit, an input section obtains an input signal of user's speech or the like and an input processing section processes the input signal and detects information relating to the user. On the basis of the detection result, a response contents determination section determines response contents to the user. While, a response manner adjusting section adjusts a response manner to the user, such as speech speed and the like, on the basis of the processing state of the input signal, the information relating to the user detected from the input signal, and the like.

A lens assembly includes at least a pair of lenses fixed in a lens barrel and an additional lens initially having at least one degree of freedom of movement with respect to the other lenses. The additional lens can be fixed in a desired alignment position with respect to the other lenses.

An operating instrument includes a housing, a chassis, a first and second drive shaft, a gear assembly, a switch assembly, and a bearing lock assembly. The first and second drive shafts each has a first portion supported by the chassis in the housing and a second portion extending out of the housing. The gear assembly includes a first gear member fixedly received on the first portion of the first drive shaft and a second gear member slidably received on the first portion of the second drive shaft. The switch assembly is operable to place the second gear member into engagement with the first gear member thereby coupling the second drive shaft with the first drive shaft to provide a first operating mode wherein the second drive shaft is rotatable with the first drive shaft, or displace the second gear member out of engagement with the first gear member thereby decoupling the second drive shaft from the first drive shaft to provide a second operating mode wherein the second drive shaft is non-rotatable with the first drive shaft. The bearing lock assembly is operable to lock the first and second drive shafts to the chassis whereby the first and second drive shafts are restricted from sliding out of the housing and are capable of freely rotating or unlock the first and second drive shafts from the chassis to allow the first and second drive shafts to slide out of the housing.

Semi-conductive or insulating compositions including an ethylene/octane or butene copolymer and at least one additional polymer, such LDPE, are described. The compositions may also include carbon black and other additives. The composition may be used as a semi-conductive layer in such applications as electrical cables

The invention relates to a multiple-quantum well waveguide butt-coupling method comprising the following steps of: A, carrying out primary epitaxy on a substrate to obtain a multiple-quantum well structure; B, after a dielectric film is deposited, carrying out mask photoetching, and removing a waveguide part of a first region requiring secondary epitaxy by using a three-step etching method; C, placing an epitaxial wafer into metal organic chemical vapor deposition equipment for high-temperature treatment; and D, carrying out secondary epitaxial growth to obtain a second multiple-quantum well structure. By using the method, an attractive interface etching appearance can be achieved, cavities caused during growth can be avoided, the butting quality can be effectively improved, the coupling loss can be reduced, and good repeatability can be obtained. The multiple-quantum well waveguide butt-coupling method can be used for manufacture and batch production of various photoelectronic integrated chips.

An intergrated optical device comprises a vertically lasing semiconductor optical amplifier (VLSOA) and an optical element integrated onto a common substrate. Example optical elements include waveguides, unguided transparent regions, and active optical devices (including additional VLSOAs). The integrated device may be fabricated using a number of different methods, including based on selective area epitaxy, impurity induced disordering, etch and fill and silicon optical bench.

The present invention relates particularly to an oscillating grinding machine. The grinding machine comprises a driving motor (3) surrounded by a body (3), and a drive shaft (4) cooperating with the driving motor. The drive shaft comprises a grinding head (5) that constitutes a support for a grinding product (8). The drive shaft (4) is arranged in two pieces and comprises a main shaft (11) and an eccentric shaft (10) arranged rigidly thereto. The eccentric shaft comprises a centre line (12) that assumes an angle (α) against a corresponding centre line (13) of the main shaft, and thus the grinding head (5) will assume an eccentric placement in relation to the main shaft (11). Thus, the grinding head is arranged to oscillate in a substantially spherical plane provided by the rotation of the main shaft and the eccentricity and inclination of the eccentric shaft in relation to the main shaft.

The invention relates to a GaN-based high-electron-mobility transistor and a manufacturing method thereof, wherein a transistor structure comprises an aluminum nitrogen buffer layer grown on a substrate, a high-resistance GaN layer grown on the aluminium nitrogen buffer layer, and a high-mobility GaN channel layer grown on the high-resistance GaN layer. The transistor is characterized in that an indium nitrogen insert layer is grown on the high-mobility GaN channel layer, and an aluminum nitrogen insert layer is grown on the indium nitrogen insert layer; and an unintentional adulteration aluminium gallium nitrogen layer is grown on the aluminium nitrogen insert layer, and the aluminium nitrogen insert layer and the unintentional adulteration aluminium gallium nitrogen layer form a barrier layer together. According to the invention, the indium nitrogen insert layer is utilized to effectively reduce alloy scattering, increase the electron mobility and electron concentration of the high electron mobility transistor and improve the stability and reliability of a transistor device.

The invention relates to a magnetic field detector based on perpendicular exchange coupling and preparing and use methods of the magnetic field detector. The preparing method of the magnetic field detector comprises the following steps that a magnetron sputtering or electronic beam evaporation method is adopted, so that a bottom electrode, a ferromagnetic layer, a non-magnetic layer and a top electrode are sequentially deposited on a substrate, and a multilayer film structure is obtained; an ultraviolet exposure process and an argon ion etching process are adopted, so that the obtained multilayer film structure is processed into a cross-shaped structure. The prepared magnetic field detector comprises the substrate, the bottom electrode, the ferromagnetic layer, the non-magnetic layer and the top electrode, the substrate is of the cross-shaped structure, and the bottom electrode, the ferromagnetic layer, the non-magnetic layer and the top electrode are sequentially deposited on the substrate and matched with the substrate in shape; the ferromagnetic layer is composed of a perpendicular magnetization film, the non-magnetic layer is composed of an anti-ferromagnetic layer or an oxide layer, and the bottom electrode and the top electrode are both Pt electrodes. The magnetic field detector can be widely applied to the process of magnetic field detection.

The invention discloses an electric field regulating antiferromagnetic base Hall device and a preparation method thereof. The electric field regulating antiferromagnetic base Hall device comprises a bottom layer, an antiferromagnetic coupling layer and a top layer deposited on a conductive substrate in sequence, and the top layer is provided with a side electrode and a gate electrode in sequence; the bottom layer is a magnetic insulator layer or a nonmagnetic insulator layer; the bottom layer is a composite layer composed of the magnetic insulator layer or nonmagnetic insulator layer; the antiferromagnetic coupling layer is an antiferromagnetic layer or composed of the antiferromagnetic layer and a ferromagnetic layer; the top layer is a hafnium oxide layer, an aluminum oxide layer or a silicon dioxide layer; the side electrode is a double-layer film composed of a Ti layer and an Au layer or a double-layer film composed of a Ti layer and a Pt layer, and the Ti layer, Au layer or Ti layer and Pt layer are arranged on the top layer in sequence; the gate electrode is ion liquid. The electric field regulating antiferromagnetic base Hall device is simple in structure, easy to prepare, low in cost and good in magnetization characteristic, and the electric field regulating antiferromagnetic base Hall device can serve as a magnetic field detector; the electric field regulating antiferromagnetic base Hall device is nonsensitive to external magnetic field and thermal disturbance, and the measured Hall resistance is more precise; the electric field regulating antiferromagnetic base Hall device is a low-energy consumption spinning device, and the electric field regulating antiferromagnetic base Hall device is significant for the development of antiferromagnetic spinning electronic devices.

The invention provides a method utilizing a controllable defective graphene insertion layer to prepare metal-semiconductor alloy. The method comprises steps that 1), a semiconductor substrate is provided; 2), graphene is formed don a surface of the semiconductor substrate; 3), ion injection into the graphene is carried out to acquire density-controllable defective graphene; 4), a metal layer is formed on the surface of the defective graphene; and 5), annealing processing for the structure acquired in the step 4) is carried out to form the metal-semiconductor alloy. Through forming the graphene insertion layer between the semiconductor substrate and the metal layer, contact characteristics of an interface of the semiconductor substrate and the metal-semiconductor alloy can be effectively improved, the metal-semiconductor alloy acquired through epitaxial growth has better quality and more stable performance, the graphene insertion layer has relatively high electron mobility, resistance of the metal-semiconductor alloy layer acquired through epitaxial growth and contact resistance of the semiconductor substrate and the metal-semiconductor alloy layer can be effectively reduced, and thereby electrical performance is improved.

A hose assembly including an elongated flexible metal hose attached to a hose fitting having a fitting body defining a passageway for conveying material. The fitting body has a mating portion for connecting the hose assembly to a corresponding fitting which delivers or accepts material passing through the hose assembly. A sleeve engages a surface of the fitting body and secures an end portion of the metal conduit to the fitting by trapping the end portion of the metal conduit between the sleeve and the fitting body. During installation, the sleeve is inserted into the body and subsequently the hose is inserted into a gap between the sleeve and fitting body. A fixture having a radially expanding member is slipped into the sleeve and brought into contact with the sleeve to deform the sleeve and consequently trap an end of the hose between the sleeve and the fitting.

A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.