Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for growing cerium-doped lanthanum bromide scintillation crystal by using out-of-phase seed crystal

A scintillation crystal, lanthanum bromide technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of serious volatilization of components, easy cracking of crystals, difficult crystal growth, etc.

Active Publication Date: 2012-07-04
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF2 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But LaBr 3 : Ce crystal growth is difficult, the components are highly volatile, and it is very easy to react with oxygen and water; and the crystal is very easy to crack
Therefore LaBr 3 : The yield of Ce crystals is very low, the growth of large-sized crystals is particularly difficult, and the price is extremely expensive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Quartz seed crystal production: Cut the quartz crystal into long strip-shaped seed crystals along the c-axis, with a size of 3×3×15mm, and the c-axis direction is parallel to the length direction (15mm).

[0021] Sealing of raw materials: put a c-axis elongated quartz seed crystal with a size of 3×3×15 mm into the nucleation area at the bottom of the quartz crucible, and the inner diameter of the nucleation area is 3.3 mm. The raw material of cerium-doped lanthanum bromide scintillation crystal is a mixture of commercially available or self-synthesized anhydrous lanthanum bromide and cerium bromide. The chemical composition of cerium-doped lanthanum bromide is Ce x :La (1-x) Br 3 , where x is the molar ratio of Ce replacing La, in the range of 0.00010.005 : La 0.995 Br 3 , according to the molar ratio of 0.005:0.995, in the glove box, in the nitrogen atmosphere of anaerobic anaerobic water, respectively weigh CeBr 3 0.5g, La 0 Br 3 99.5g, mix well in the agate b...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for growing a cerium-doped lanthanum bromide scintillation crystal by using an out-of-phase seed crystal. The seed crystal made of a crystal material of which the structural parameters and symmetry are similar to those of a lanthanum bromide crystal is placed in a nucleation area at the bottom of a quartz crucible, the seed crystal material and lanthanum bromide are not subjected to chemical reaction, and the melting point of the seed crystal material is higher than that of the lanthanum bromide crystal. The crystal is grown by a crucible descending method, two-section temperature control is performed at the melting stage of a raw material to ensure that the upper part is cold and the lower part is hot, the convection effect of a melt is improved, the lanthanum bromide is nucleated on the surface of the seed crystal preferentially in the crucible descending process, the growth direction of the lanthanum bromide is consistent with the crystallographic direction of the seed crystal, and the lanthanum bromide crystal in the required direction is obtained by continuous growth. The method has the advantages that: a stable crystal material in air can be selected as the seed crystal, and the phenomenon that processing and anhydrous operation are difficult to perform when the lanthanum bromide crystal is taken as the seed crystal is avoided; and compared with a seed-crystal-free spontaneous nucleation growth method, the method has the advantage that: the success rate of oriented crystal growth is greatly improved.

Description

technical field [0001] The invention relates to a crucible descending method for preparing cerium-doped lanthanum bromide scintillation crystals, and relates to the raw material synthesis and crystal growth process of the crystals. Background technique [0002] Scintillation crystals can be made into detectors, and have great application prospects in the fields of high-energy physics, nuclear physics, imaging nuclear medicine diagnosis (XCT, PET), geological exploration, astronomy and space physics, and safety inspection. With the rapid development of nuclear science and technology and other related technologies, its application fields are constantly expanding. Different application fields also put forward more and higher requirements for inorganic scintillators. Traditional scintillation crystals such as NaI(Tl) and BGO cannot meet the special requirements of new application fields. [0003] People are exploring new and excellent scintillation crystals suitable for differ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B11/00
Inventor 叶宁吴少凡苏伟平
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com