Manufacturing method of large-size C-oriented sapphire crystals
A large-size, sapphire technology, which is applied in the field of growth of large-size (maximum crystal diameter: 14 inches) C-oriented sapphire single crystal, can solve problems such as sapphire single crystal cracking and sapphire crystal difficulty, and achieve core competitiveness and high weight , good crystal growth stability
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[0036] (1) The main ingredient ingredients are 99.999wt% high-purity alumina round cake with a diameter of 50mm and some irregular-shaped particles shown in Table 1;
[0037] (2) Filling: put the weighed alumina raw material into the crucible, and place the round cakes in a cross to prevent the liquid from splashing during melting, and fill with irregular-shaped particles;
[0038] (3) Adjust and install the heater and thermal field: adjust and install the tungsten dual heater and the tungsten-molybdenum thermal field, close the furnace cavity and install the camera, install the C-direction 30×30mm seed crystal, and adjust the position (according to theoretical calculation). , keep the seed crystal above the liquid level at a distance of 200mm from the liquid level), and start the monitor and recorder.
[0039] (4) Heating: set the heating program in the automatic control program, set the power of the main heater between 20KW and 80KW, set the power of the sub-heater between 1...
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