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High-performance BiCuSeO-base thermoelectric material and preparation method thereof

A thermoelectric material, high-performance technology, applied in the direction of thermoelectric device junction lead wire material, thermoelectric device manufacturing/processing, etc., can solve the problems of poor thermoelectric performance and low conductivity of BiCuSeO

Active Publication Date: 2019-10-18
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the particularly high electronegativity of oxygen, the conductivity of BiCuSeO is very low, and its thermoelectric performance is not good [L.D.Zhao, et al. Applied Physics Letters, 2010,97(9):092118.], which limits its further application

Method used

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  • High-performance BiCuSeO-base thermoelectric material and preparation method thereof
  • High-performance BiCuSeO-base thermoelectric material and preparation method thereof
  • High-performance BiCuSeO-base thermoelectric material and preparation method thereof

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preparation example Construction

[0032] The present invention provides a method for preparing a high-performance BiCuSeO-based thermoelectric material described in the above technical solution, comprising the following steps:

[0033] According to Bi 1-x-y A y Cu 1-x The stoichiometric ratio of SeO weighs powdered raw materials Bi, AO, Cu, Se, Bi 2 o 3 , mixed evenly under the protection of argon, vacuum-sealed and sintered to obtain an ingot; the AO is selected from CaO, SrO, BaO or PbO;

[0034] The ingot is ground into powder in an argon atmosphere, and then vacuum hot-pressed and sintered to obtain a high-performance BiCuSeO-based thermoelectric material.

[0035] The present invention according to Bi 1-x-y A y Cu 1-x The stoichiometric ratio of SeO weighs powdered raw materials Bi, AO, Cu, Se, Bi 2 o 3 , mixed uniformly under the protection of argon, vacuum-sealed and then sintered to obtain an ingot; the AO is selected from CaO, SrO, BaO or PbO. In the present invention, the process of sintering...

Embodiment 1

[0044] According to Bi 1-x-y Pb y Cu 1-x The stoichiometric ratio of SeO weighs powdered raw materials Bi, PbO, Cu, Se, Bi 2 o 3 , where x=0.02, y=0. After the raw materials were mixed uniformly under the protection of argon, they were vacuum-sealed in a quartz tube. Put the vacuum-sealed raw materials into the muffle furnace, first raise the temperature from room temperature to 300°C at a rate of 5°C per minute, and then keep it for 12 hours; then raise the temperature from 300°C to 700°C at a rate of 5°C per minute, and Keep warm for 10 hours; finally cool slowly to room temperature. Grind the ingot obtained in the above steps into powder under the protection of argon, put it into a graphite mold, apply axial pressure to carry out vacuum hot pressing sintering, wherein the sintering temperature is 650°C, the pressure is 80MPa, and the holding time is 30min . After cooling, the BiCuSeO-based thermoelectric material can be obtained, and its dimensionless figure of merit...

Embodiment 2

[0046] According to Bi 1-x-y Pb y Cu 1-x The stoichiometric ratio of SeO weighs powdered raw materials Bi, PbO, Cu, Se, Bi 2 o 3 , where x=0.04, y=0. After the raw materials were mixed uniformly under the protection of argon, they were vacuum-sealed in a quartz tube. Put the vacuum-sealed raw materials into the muffle furnace, first raise the temperature from room temperature to 300°C at a rate of 5°C per minute, and then keep it for 12 hours; then raise the temperature from 300°C to 700°C at a rate of 5°C per minute, and Keep warm for 10 hours; finally cool slowly to room temperature. Grind the ingot obtained in the above steps into powder under the protection of argon, put it into a graphite mold, apply axial pressure to carry out vacuum hot pressing sintering, wherein the sintering temperature is 650°C, the pressure is 80MPa, and the holding time is 30min . After cooling, the BiCuSeO-based thermoelectric material can be obtained, and its dimensionless figure of merit...

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Abstract

The invention provides a high-performance BiCuSeO-base thermoelectric material and a preparation method thereof. The thermoelectric material has a chemical formula I: Bi<1-x-Y>A<y>Cu<1-x>SeO, whereinA is selected from Ca, Sr, Ba or Pb0<x<=0.04, and 0<=y<=0.15. According to the thermoelectric material provided by the invention, Bi and Cu double vacancies are introduced, and then an interlayer charge transfer channel is constructed; after an element A (A is Ca, Sr, Ba or Pb) is doped into a Bi site, the conductivity of the material is remarkably improved by means of the interlayer charge transfer channel constructed by Bi / Cu double vacancies; meanwhile, a larger Seebeck coefficient is maintained, so that the thermoelectric performance of the material is improved.

Description

technical field [0001] The invention belongs to the technical field of new energy materials, and in particular relates to a high-performance BiCuSeO-based thermoelectric material and a preparation method thereof. Background technique [0002] The increasing depletion of fossil energy represented by coal and oil, as well as the accompanying problems such as the greenhouse effect and environmental pollution, have aroused widespread concern from the whole society. Therefore, it is imminent to develop a new generation of low-carbon, green and sustainable new energy technologies. Thermoelectric materials enable direct and reversible conversion between electrical and thermal energy. Therefore, it is expected to convert various low-quality heat energy such as industrial waste heat, automobile exhaust, and the infrared part of the solar spectrum into electrical energy; Control and other fields also have great application prospects. [0003] The conversion efficiency of thermoelec...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34H10N10/852H10N10/01
CPCH10N10/852H10N10/01
Inventor 肖翀朱豪谢毅
Owner UNIV OF SCI & TECH OF CHINA
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