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19-valence-electron n-type NbCoSbSn thermoelectric material and preparation method thereof

A technology of thermoelectric materials and valence electrons, applied in the field of semiconductor thermoelectric materials, can solve problems such as little research, and achieve the effects of low production cost, good thermoelectric performance and simple preparation process

Inactive Publication Date: 2017-05-31
XIHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is little research on half-Heusler compounds with 19 valence electrons as thermoelectric materials.

Method used

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  • 19-valence-electron n-type NbCoSbSn thermoelectric material and preparation method thereof
  • 19-valence-electron n-type NbCoSbSn thermoelectric material and preparation method thereof
  • 19-valence-electron n-type NbCoSbSn thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1: A kind of 19 valence electron n-type NbCoSbSn thermoelectric material, its chemical formula is NbCoSb 0.8 sn 0.2 .

[0036] NbCoSb as above 0.8 sn 0.2 The preparation method comprises the following steps:

[0037] ① Arc melting: divided into NbCoSb by composition 0.8 sn 0.2The stoichiometric ratio of each metal raw material (Nb, Co, Sb, Sn) was weighed in a certain amount, and an additional 5% of Sb was added. The raw materials are arc smelted under the protection of circulating argon gas, and ingots are obtained after repeated smelting 5 times;

[0038] ② Solid block milling: the ingot is milled for 7 hours by high-energy ball milling method to pulverize the ingot to obtain nano-scale powder;

[0039] ③Rapid hot pressing: put the nano-powder into the mold and use the rapid hot pressing method to keep pressure and sinter at 1000 ℃ and 77 MPa for 2 minutes to obtain the product.

[0040] Adopt PANalytical X'Pert Pro type X-ray polycrystal diffractom...

Embodiment 2

[0041] Embodiment 2: A kind of 19 valence electron n-type NbCoSbSn thermoelectric material, its chemical formula is NbCoSb 0.8 sn 0.2 .

[0042] NbCoSb as above 0.8 sn 0.2 The preparation method comprises the following steps:

[0043] a Mixed cold pressing: first follow the NbCoSb 0.8 sn 0.2 , the proportion of molar ratio weighed a certain amount of Nb powder, Co powder, Sb powder, Sn powder, under the protection of an inert gas, fully mixed on a high-energy ball mill for 25 minutes, and the powder after uniform mixing was put into a cold-pressing mold, at 400 Cold pressing under MPa for 20 min to form a block;

[0044] b Vacuum sealing: put the powder block obtained by cold pressing into a container, vacuumize and seal, and the vacuum degree is lower than 8×10 -6 Pa;

[0045] c Solid-state sintering: heat the sealed container in a heat treatment furnace and raise the temperature to 1100 °C for 24 hours, then take it out and air-cool it, with a heating rate of 200 °C / ...

Embodiment 3

[0049] Embodiment 3: A kind of 19 valence electron n-type NbCoSbSn thermoelectric material, its chemical formula is NbCoSb 0.75 sn 0.25 .

[0050] NbCoSb as above 0.75 sn 0.25 The preparation method comprises the following steps:

[0051] ① Arc melting: divided into NbCoSb by composition 0.75 sn 0.25 The stoichiometric ratio of each metal raw material (Nb, Co, Sb, Sn) was weighed in a certain amount, and an additional 8% of Sb was added. The raw materials are arc smelted under the protection of circulating argon gas, and ingots are obtained after repeated smelting 5 times;

[0052] ② Solid block milling: the ingot is milled for 3 hours by high-energy ball milling method to pulverize the ingot to obtain nano-scale powder;

[0053] ③Rapid hot pressing: put the nano-powder into the mold and sinter at 950 ℃ and 70 MPa for 3 minutes under the pressure of 950 ℃ and 70 MPa to obtain the product.

[0054] The thermal conductivity, Seebeck coefficient, and electrical conductivi...

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Abstract

The invention relates to the field of semiconductor thermoelectric materials, in particular to a 19-valence-electron n-type NbCoSbSn thermoelectric material and a preparation method thereof. The chemical formula of the 19-valence-electron n-type NbCoSbSn thermoelectric material is NbCoSb1-xSnx, wherein X is equal to 0.01-0.4. After raw materials are selected according to an amount-of-substance ratio, the 19-valence-electron n-type NbCoSbSn thermoelectric material can be obtained after mixing and cool pressing, vacuum sealing, solid state sintering, solid block pulverizing and quick thermocompression are carried out, and can also be obtained after electric arc fusion, the solid block pulverizing and the quick thermocompression are carried out. A physical unit cell of the 19-valence-electron n-type NbCoSbSn thermoelectric material is internally provided with 19 valence electrons, the prior theoretical conception is broken through, a new material is developed, and the 19-valence-electron n-type NbCoSbSn thermoelectric material has innovative significance. Through Sn doping / alloying, compared with NbCoSb, the prepared 19-valence-electron n-type NbCoSbSn thermoelectric material is low in heat conductivity, high in Seebeck coefficient, high in power factor and good in thermoelectric properties.

Description

technical field [0001] The invention relates to the field of semiconductor thermoelectric materials, in particular to an n-type half-Heusler compound NbCoSbSn thermoelectric material with 19 valence electrons in a nominal physical unit cell and a preparation method thereof. Background technique [0002] In recent years, energy and environmental issues have gradually become prominent, and energy and environmental crises have attracted increasing attention. At present, about 70% of the energy consumed in the world every year is wasted in the form of waste heat. How to effectively recover and utilize this waste heat will greatly alleviate the problem of energy shortage. Thermoelectric materials are semiconductor functional materials that can directly convert electrical energy to thermal energy. The Seebeck effect discovered in 1823 and the Petier effect discovered in 1834 provide a theoretical basis for the application of thermoelectric energy converters and thermoelectric cool...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C30/04C22C1/04
CPCC22C1/007C22C30/04C22C1/047
Inventor 黄丽宏王浚臣张勤勇任志锋
Owner XIHUA UNIV
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