35 results about "Heusler compound" patented technology

A neuromorphic computing array includes horizontal lines and vertical lines that intersect the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding one of the horizontal lines and to a corresponding one of the vertical lines. Each cell includes a substrate, a seed layer overlying the substrate, and a nitride layer, overlying the seed layer, and optionally having a thickness greater than 5 Angstroms. Each cell further includes a templating layer, outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms. Each cell still further includes a magnetic layer overlying the templating layer, a tunnel barrier outward of the magnetic layer; and a magnetic layer outward of the tunnel barrier. The magnetic layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA).

A magnetoresistive random-access memory cell includes a first magnetic layer having a first lattice constant; a second magnetic layer having a second lattice constant; and a tunnel barrier between the first and second magnetic layers. The tunnel barrier includes at least one oxide layer with an oxide layer lattice constant. The oxide layer lattice constant has a mismatch smaller than six percent with at least one of the first and second lattice constants.

A neuromorphic computing array includes horizontal lines and vertical lines that intersect the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding one of the horizontal lines and to a corresponding one of the vertical lines. Each cell includes a substrate (1401), a seed layer (1403) overlying the substrate, and a nitride layer (1403A) overlying the seed layer, and optionally having a thickness greater than 5 Angstroms. Each cell further includes a templating layer (1403B) outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms. Each cell still further includes a first magnetic layer (1405) overlying the templating layer, a tunnel barrier (1409) outward of the first magnetic layer; and a second magnetic layer (1411) outward of the tunnel barrier. The first magnetic layer (1405) includes a Heusler compound and exhibits perpendicular magnetic anisotropy, PMA.

A magnetoresistance effect element having a large MR ratio is provided.This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.

A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.

A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler multilayer structure including a plurality of layers of two different Heusler compounds, at least one of which is half metallic. The half metallic Heusler multilayer structure is located outward of the templating layer and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the half metallic Heusler multilayer structure, and a magnetic layer is outward of the tunnel barrier.

A magnetoresistive random-access memory cell includes a substrate; a seed layer outward of the substrate; a resistive layer outward of the seed layer; and an ultra-thin templating layer. The ultra-thin templating layer is outward of the resistive layer, and includes a binary alloy having an alternating layer lattice structure. The ultra-thin templating layer has a thickness of 7-30 Angstroms. A Heusler layer is located outward of the ultra-thin templating layer, includes a Heusler compound, and exhibits perpendicular magnetic anisotropy (PMA).

A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.

A device is described comprising a multilayer structure comprising three layers. The first layer is a magnetic Heusler compound, the second layer (serving as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably: Al; or Ga or an alloy of Al with Ga, Ge, Sn or a combination thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is expressed as Ru 1‑x E x , x is in the range of from 0.45 to 0.55. The MRAM element may be constructed by sequentially forming a substrate, the multilayer structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).

A magnetoresistive random-access memory cell includes a templating layer. The templating layer includes a binary alloy having an alternating layer lattice structure. The cell further includes a half metallic Heusler layer including a half metallic Heusler material having a tetragonal lattice structure. The half metallic Heusler layer is located outward of the templating layer, and has a Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic Heusler material. A tunnel barrier is located outward of the half metallic Heusler layer, and a magnetic layer is located outward of the tunnel barrier.

The application relates to the technical field of piezoelectric materials, and discloses application of a kind of half Heusler alloy as piezoelectric material, the half Heusler alloy is of chemical formula XYZ, wherein X is any one of Ti, Zr, Hf, V, Nb, Ta, Re or solid solution in any proportion, Y is Fe or Co or Ni, and Z is Sn or Sb or Bi.The inventor finds that the above-mentioned half Heusler alloy can exhibit excellent piezoelectric performance, wherein a [111] cut type wafer of ZrNiSn single crystal material can obtain a piezoelectric coefficient of 22 pC / N at 300 K.The half Heusler alloy has good thermal stability and structural stability in the temperature range from room temperature to 1173 K, and has great high-temperature piezoelectric application potential.A piezoelectric sensor prepared based on the above-mentioned half Heusler alloy can obtain a voltage response of the order of sub-mV under the normal pressing force of a human body, and can be used for the development of electronic devices such as piezoelectric sensors, piezoelectric vibration energy collectors and piezoelectric self-powered systems.

A magnetoresistance effect element includes: a first ferromagnetic layer, a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co Heusler alloy, and at least a part of the second layer is crystallized and the second layer contains a ferromagnetic element and elemental boron.

A memory array includes a word lines intersecting bit line-complementary bit line pairs at a plurality of cell locations. Magnetic tunnel junction cells are located at each location, and each cell is electrically connected to a corresponding bit line and selectively interconnected to a corresponding one of the complementary bit lines under control of a corresponding one of the word lines. Each cell includes a substrate; a seed layer overlying the substrate; a nitride layer, overlying the seed layer, and having a thickness greater than 5 Angstroms; a templating layer, outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms; a magnetic layer overlying the templating layer, including a Heusler compound and exhibiting PMA; a tunnel barrier outward of the magnetic layer; and a magnetic layer outward of the tunnel barrier.

The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a nonmagnetic buffer layer, a nonmagnetic interlayer, a ferromagnetic layer, and a nonmagnetic barrier layer. One or more of the barrier layer, interlayer, and buffer layer comprise a polycrystalline non-Heusler alloy material, or a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In. The Heusler alloy is a full Heusler alloy comprising X2YZ or a half Heusler alloy comprising XYZ, where X is one of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is one of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is one of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.

A magneto-resistive element includes a substrate, first ferromagnetic layer, non-magnetic metal layer, second ferromagnetic layer, third ferromagnetic layer, metal oxide layer, fourth ferromagnetic layer, and antiferromagnetic layer. The first and second ferromagnetic layers include a Heusler alloy containing Co. The non-magnetic metal layer is located between the first and second ferromagnetic layers. The second ferromagnetic layer is closer to the substrate than the first. The third ferromagnetic layer is located between the second ferromagnetic layer and the metal oxide layer. The metal oxide layer has a spinel crystal structure and is located between the third and fourth ferromagnetic layers. The fourth ferromagnetic layer is amorphous containing B and Ta, and is located between the metal oxide layer and the antiferromagnetic layer. At least a part of the metal oxide layer, the third ferromagnetic layer, the second ferromagnetic layer, the non-magnetic metal layer, and the first ferromagnetic layer are continuously crystallized.

A layered structure which achieves both high spin polarization and low electrical resistance is provided. The layered structure includes a Heusler alloy, and graphene that is in direct contact with the surface of the Heusler alloy. Such a layered structure is fabricated by forming a thin film of the Heusler alloy over a substrate under vacuum, and growing graphene on the surface of the thin film of the Heusler alloy while maintaining the vacuum.

The invention provides a laminated body, an element comprising the laminated body, and a method for manufacturing the laminated body. The laminate has: a piezoelectric layer formed from a crystal of an oxide having piezoelectric properties; a metal layer; and a magnetic material layer formed of a crystal of a Heusler alloy as a ferromagnet, in which the piezoelectric material layer, the metal layer, and the magnetic material layer are laminated in this order.

The invention provides a composite Hf-free semi-Heusler alloy thermoelectric material as well as a preparation method and application thereof. The chemical composition of the composite Hf-free semi-Heusler alloy thermoelectric material is x wt% of Cu-ZrCoSb0. 8Sn0. 2, wherein 0 < x < = 2.0, and x is mass fraction. The preparation method of the composite Hf-free semi-Heusler alloy thermoelectric material comprises the following steps: weighing Zr particles, Co particles, Sb particles and Sn particles according to the chemical composition, and smelting in a protective atmosphere to obtain an alloy ingot; and crushing the alloy ingot, mixing the crushed alloy ingot with Cu powder, grinding, and sintering to obtain the composite Hf-free semi-Heusler alloy thermoelectric material. The composite Hf-free semi-Heusler alloy thermoelectric material provided by the invention has a relatively high thermoelectric figure of merit while maintaining relatively low cost, and shows good application prospects and large-scale popularization potential in the field of high-temperature power generation.

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

The present disclosure relates to the technical field of piezoelectric materials, and disclosed is the use of a half-Heusler alloy as a piezoelectric material. The half-Heusler alloy has a chemical formula of XYZ, where X= any one of Ti, Zr, Hf, V, Nb, Ta and Re or a solid solution in any ratio thereof, Y= Fe, Co or Ni, and Z= Sn, Sb or Bi. The inventors have found through research that the above-mentioned half-Heusler alloy can exhibit good piezoelectric properties, in which a piezoelectric coefficient of 22 pC / N can be obtained at 300 K for a [111]-cut single‑crystal ZrNiSn wafer material. In addition, the half-Heusler alloy exhibits a good thermal stability and structural stability in a temperature range from room temperature to 1173 K, and has great potential for high-temperature piezoelectric application. Piezoelectric sensors prepared based on the half-Heusler alloy described above can generate a sub-mV voltage response under a typical human pressing force, and can be used in the development of electronic devices such as piezoelectric sensors, piezoelectric vibration energy harvesters, and piezoelectric self-powered systems.

A device is provided. The device includes a multi-layered structure that is non-magnetic at room temperature, the multi-layered structure comprising alternating layers of Co and E, wherein E comprises at least one other element selected from the group consisting of Ge, Ga, Sn and Al, wherein a composition of the multi-layered structure is represented by Co1−xEx, with x being in a range from 0.42 to 0.55. The device also includes a combined layer provided in contact with the multi-layered structure, the combined layer including an insertion layer comprising Co or Fe or Mn or Al in contact with a Heusler compound.

A neuromorphic computing array includes horizontal lines and vertical lines, with the vertical lines intersecting the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding horizontal line and a corresponding vertical line. Each cell includes a substrate (1401), a seed layer (1403) covering the substrate, and a nitride layer (1403A) covering the seed layer (optionally, the nitride layer has a thickness greater than 5 angstroms). Each cell also includes a template layer (1403B) located outside the nitride layer, the template layer comprising a binary alloy having an alternating layered lattice structure and having a thickness greater than 50 angstroms. Each cell also includes a first magnetic layer (1405) covering the template layer, a tunnel barrier (1409) located outside the first magnetic layer, and a second magnetic layer (1411) located outside the tunnel barrier. The first magnetic layer (1405) comprises a Hessler alloy and exhibits perpendicular magnetic anisotropy (PMA).

The invention discloses a p-type ZrCoSb-based thermoelectric material based on Sb bit entropy regulation and a preparation method, relates to the technical field of thermoelectric materials, and aims to solve the technical problem of low thermoelectric figure of merit of an existing half-Heusler alloy. The chemical formula of the p-type ZrCoSb-based thermoelectric material based on Sb bit entropy regulation and control is ZrCoSb < 0.8-x > Bi < x > Sn < 0.2 >, wherein x is not less than 0.05 and not more than 0.3; and at the temperature of 873 K, when x is equal to 0.2, the thermoelectric figure of merit of the thermoelectric material is 1.1. The preparation method of the thermoelectric material comprises the following steps: smelting zirconium, cobalt, antimony, bismuth and tin elementary substance raw materials in a protective atmosphere according to the composition proportion of each elementary substance to obtain an alloy ingot; crushing the alloy ingot, and performing grinding and ball milling treatment to obtain powder; and sintering the powder to obtain the thermoelectric material.

The invention discloses a rare-earth-based half-Heusler alloy material as well as a preparation method and application thereof. The preparation method comprises the following steps: smelting Pt and Sb metal raw materials to obtain a precursor PtSb; carrying out secondary smelting on Lu and Re metal raw materials and the precursor PtSb to obtain a smelted cast ingot, and carrying out crushing, ball milling and sintering to obtain the rare-earth-based half-Heusler alloy material Lu1-xRexPtSb; re = Sc or Y, x represents atomic percent, and x is more than or equal to 0 and less than or equal to 1.0. According to the method, scandium, yttrium, lutetium, platinum and antimony serve as raw materials, the cast ingot is obtained through the two-step suspension smelting reaction, the method can control the intensity of the thermal chemical reaction, a large amount of heat instantly released by one-time feeding is avoided, the high-quality rare earth-based half-Heusler alloy material is obtained, the optimal peak thermoelectric figure of merit can reach 1.0 or above, and the thermal conductivity of the alloy material is greatly improved. The highest level reported in the prior art is exceeded.

A magnetoresistive random-access memory cell (1202) includes a first magnetic layer having a first lattice constant; a second magnetic layer having a second lattice constant; and a tunnel barrier between the first and second magnetic layers. The tunnel barrier includes at least one oxide layer with an oxide layer lattice constant. The oxide layer lattice constant has a mismatch smaller than six percent with at least one of the first and second lattice constants.

A magnetoresistance effect element includes: a first ferromagnetic layer, a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co Heusler alloy, and at least a part of the second layer is crystallized and the second layer contains a ferromagnetic element and elemental boron.

In one embodiment, a magnetic storage device is provided. The magnetic storage device includes: a free layer structure having a variable magnetization direction. The free layer structure includes: a first free layer which is a first Heusler alloy; a coupling layer located on the first free layer, the coupling layer including a metal oxide layer; and a second free layer located on the metal oxide layer, the second free layer being a second Heusler alloy different from the first Heusler alloy. The magnetic storage device may further include: a pinned layer structure having a fixed magnetization direction; and a tunnel barrier layer located between the pinned layer structure and the free layer structure.

The application relates to a thermoelectric material, and discloses an electrode of a ZrCoSb-based Half-Heusler thermoelectric material, a thermoelectric device, a preparation method and application, the electrode is a CoSi2 electrode, and the electrode is connected with an n-type (M x Zr 1‑x ) 1‑y Nb y CoSb or a p-type M a Zr 1‑a CoSb 1‑b Sn b The thermoelectric device is prepared through pre-pressing and discharge plasma sintering. The CoSi2 electrode used in the application has an electrical conductivity close to that of pure metal and a thermal expansion coefficient close to that of the ZrCoSb-based Half-Heusler alloy, the contact resistance of the thermoelectric device prepared by connecting the ZrCoSb-based Half-Heusler alloy material with the CoSi2 electrode is very small, is lower than 1 mu omega*cm 2 , the influence of the interface resistance on the device performance can be ignored, the thermoelectric material can be fully utilized to give full play to the thermoelectric conversion efficiency, and the application can be applied to the fields of thermoelectric cells and coolers.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer. The nonmagnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy layer. The nonmagnetic layer includes a first region and a second region in a plane. Both of the first region and the second region are formed of a metal. The second region is different in constituent material from the first region. The second region has a crystal structure of a body-centered cubic lattice structure (bcc).

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.