10 results about "Heusler compound" patented technology

A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.

A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler multilayer structure including a plurality of layers of two different Heusler compounds, at least one of which is half metallic. The half metallic Heusler multilayer structure is located outward of the templating layer and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the half metallic Heusler multilayer structure, and a magnetic layer is outward of the tunnel barrier.

A magnetoresistive random-access memory cell includes a templating layer. The templating layer includes a binary alloy having an alternating layer lattice structure. The cell further includes a half metallic Heusler layer including a half metallic Heusler material having a tetragonal lattice structure. The half metallic Heusler layer is located outward of the templating layer, and has a Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic Heusler material. A tunnel barrier is located outward of the half metallic Heusler layer, and a magnetic layer is located outward of the tunnel barrier.

The application relates to the technical field of piezoelectric materials, and discloses application of a kind of half Heusler alloy as piezoelectric material, the half Heusler alloy is of chemical formula XYZ, wherein X is any one of Ti, Zr, Hf, V, Nb, Ta, Re or solid solution in any proportion, Y is Fe or Co or Ni, and Z is Sn or Sb or Bi.The inventor finds that the above-mentioned half Heusler alloy can exhibit excellent piezoelectric performance, wherein a [111] cut type wafer of ZrNiSn single crystal material can obtain a piezoelectric coefficient of 22 pC / N at 300 K.The half Heusler alloy has good thermal stability and structural stability in the temperature range from room temperature to 1173 K, and has great high-temperature piezoelectric application potential.A piezoelectric sensor prepared based on the above-mentioned half Heusler alloy can obtain a voltage response of the order of sub-mV under the normal pressing force of a human body, and can be used for the development of electronic devices such as piezoelectric sensors, piezoelectric vibration energy collectors and piezoelectric self-powered systems.

The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a nonmagnetic buffer layer, a nonmagnetic interlayer, a ferromagnetic layer, and a nonmagnetic barrier layer. One or more of the barrier layer, interlayer, and buffer layer comprise a polycrystalline non-Heusler alloy material, or a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In. The Heusler alloy is a full Heusler alloy comprising X2YZ or a half Heusler alloy comprising XYZ, where X is one of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is one of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is one of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

The present disclosure relates to the technical field of piezoelectric materials, and disclosed is the use of a half-Heusler alloy as a piezoelectric material. The half-Heusler alloy has a chemical formula of XYZ, where X= any one of Ti, Zr, Hf, V, Nb, Ta and Re or a solid solution in any ratio thereof, Y= Fe, Co or Ni, and Z= Sn, Sb or Bi. The inventors have found through research that the above-mentioned half-Heusler alloy can exhibit good piezoelectric properties, in which a piezoelectric coefficient of 22 pC / N can be obtained at 300 K for a [111]-cut single‑crystal ZrNiSn wafer material. In addition, the half-Heusler alloy exhibits a good thermal stability and structural stability in a temperature range from room temperature to 1173 K, and has great potential for high-temperature piezoelectric application. Piezoelectric sensors prepared based on the half-Heusler alloy described above can generate a sub-mV voltage response under a typical human pressing force, and can be used in the development of electronic devices such as piezoelectric sensors, piezoelectric vibration energy harvesters, and piezoelectric self-powered systems.

A neuromorphic computing array includes horizontal lines and vertical lines, with the vertical lines intersecting the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding horizontal line and a corresponding vertical line. Each cell includes a substrate (1401), a seed layer (1403) covering the substrate, and a nitride layer (1403A) covering the seed layer (optionally, the nitride layer has a thickness greater than 5 angstroms). Each cell also includes a template layer (1403B) located outside the nitride layer, the template layer comprising a binary alloy having an alternating layered lattice structure and having a thickness greater than 50 angstroms. Each cell also includes a first magnetic layer (1405) covering the template layer, a tunnel barrier (1409) located outside the first magnetic layer, and a second magnetic layer (1411) located outside the tunnel barrier. The first magnetic layer (1405) comprises a Hessler alloy and exhibits perpendicular magnetic anisotropy (PMA).

The invention discloses a rare-earth-based half-Heusler alloy material as well as a preparation method and application thereof. The preparation method comprises the following steps: smelting Pt and Sb metal raw materials to obtain a precursor PtSb; carrying out secondary smelting on Lu and Re metal raw materials and the precursor PtSb to obtain a smelted cast ingot, and carrying out crushing, ball milling and sintering to obtain the rare-earth-based half-Heusler alloy material Lu1-xRexPtSb; re = Sc or Y, x represents atomic percent, and x is more than or equal to 0 and less than or equal to 1.0. According to the method, scandium, yttrium, lutetium, platinum and antimony serve as raw materials, the cast ingot is obtained through the two-step suspension smelting reaction, the method can control the intensity of the thermal chemical reaction, a large amount of heat instantly released by one-time feeding is avoided, the high-quality rare earth-based half-Heusler alloy material is obtained, the optimal peak thermoelectric figure of merit can reach 1.0 or above, and the thermal conductivity of the alloy material is greatly improved. The highest level reported in the prior art is exceeded.

A magnetoresistance effect element includes: a first ferromagnetic layer, a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co Heusler alloy, and at least a part of the second layer is crystallized and the second layer contains a ferromagnetic element and elemental boron.