Design method for composite target for magnetron sputtering

A composite target material and magnetron sputtering technology, which are applied in the field of magnetron sputtering technology and the preparation of inorganic compound functional thin films, can solve the problems of expensive and complex co-sputtering systems, achieve easy control and regulation, reduce preparation costs, and reduce the cost of thin films. The effect of uniform composition

Inactive Publication Date: 2013-08-21
SHANGHAI UNIV
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Problems solved by technology

Such co-sputtering systems are ge...

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  • Design method for composite target for magnetron sputtering
  • Design method for composite target for magnetron sputtering
  • Design method for composite target for magnetron sputtering

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Embodiment Construction

[0018] According to the design method of the composite target for magnetron sputtering of the present invention, firstly, the single substance thin film is prepared respectively by the magnetron sputtering method and its thickness is measured by a step meter to obtain the growth parameter curve of each target material, for example: Heusler compound semiconductor TiCoSb, fixed sputtering pressure and substrate temperature and other parameters, to obtain sputtering power-film thickness curve, such as figure 1 shown. Calculate the sputtering rate of each element under different power. The difference of sputtering rate of the three elements increases rapidly with the increase of sputtering power. Too high power is not conducive to the formation of stoichiometric TiCoSb thin films, while too low power deposition efficiency is low. Taking the two into consideration, the sputtering power can be selected as 20 W. According to this calculation, the angle ratio of the three elements ...

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Abstract

The invention discloses a design method for a composite target for magnetron sputtering and relates to the fields of magnetron sputtering techniques and preparation techniques of functional films of inorganic compounds. The composite target is formed by uniformly and alternatively splicing simple-substance sheet targets, being divided into 5-degree, 10-degree, 30-degree and 60-degree fan-shaped sections, of each component according to certain angles, wherein the components are uniform in ingredient proportion, are stable and are easy to change; and the ingredients of the composite target can be adjusted by adjusting the angles of the fan-shaped sections of each component so as to adjust the stoichiometric ratio of a compound film, and the ingredients of the compound film obtained by utilizing sputtering are uniform. The design method is especially suitable for film preparation of Heusler compounds and half Heusler compounds which have brittleness and are difficultly prepared into the compound targets accordant with the stoichiometric ratio because the differences among the melting points of the components are relatively large or the ingredients of the partial components are easy to segregate and is a novel composite target design method for co-sputtering growing of the compound film or the composite film without utilizing a multi-target co-sputtering method.

Description

technical field [0001] The invention relates to a design method of a composite target material for magnetron sputtering, and belongs to the technical field of magnetron sputtering technology and preparation of inorganic compound functional thin films. Background technique [0002] Heusler and half Heusler series materials include more than 1,500 different compounds, including semiconductors, topological insulators, superconductors, magnetic materials, shape memory materials, semi-metallic materials, etc., and have a wide range of applications It is one of the continuous research hotspots in the field of materials. Their structural formulas are X 2 For YZ and XYZ, the properties of the material are very sensitive to the composition of its components. In the research of these materials, there are generally more and more in-depth studies on bulk materials, but less research on thin films, especially thermoelectric materials and topological insulators, and the research on the ...

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Application Information

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IPC IPC(8): C23C14/35
Inventor 秦娟单荣孙纽一王国华吴纯清史伟民
Owner SHANGHAI UNIV
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